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    Contextual Info: Infrared LED Chip OPA7716WDD AlGaAs / GaAs 1. Material Substrate GaAs N Type Epitaxial Layer AlGaAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF Typ


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    OPA7716WDD 130um PDF

    OPA7716WDD

    Abstract: 160MIL
    Contextual Info: Infrared LED Chip OPA7716WDD AlGaAs / GaAs 1. Material Substrate GaAs N Type Epitaxial Layer AlGaAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF Typ


    Original
    OPA7716WDD 130umeristics 130um OPA7716WDD 160MIL PDF