OP223 Search Results

OP223TX

Abstract: OP223TXV OP224S OP224TX OP224TXV
Contextual Info: @ .OPTEK P ro d u c t B u lle tin O P223TX, O P224S S e p te m b e r 1996 Hi-Reliability GaAIAs Infrared Emitting Diodes Types OP223TX, OP223TXV, OP224TX, OP224TXV, OP224S 069 i .7 5 062 (1 .5 7 ) 062 (1 .5 7 ) 058 (1 .4 7 ) .1 3 6 (3 .4 5 ) .1 1 7 (2 .9 7 )

Contextual Info: OPTEK Product Bulletin OP223 June 1996 GaAIAs Hermetic Infrared Emitting Diodes Types OP223, OP224 Features Absolute Maximum Ratings • Narrow irradiance pattern • Enhanced temperature range • Small package size permits high device density mounting • Mechanically and spectrally matched

Contextual Info: OPTEK Product Bulletin OP223 April 1993 GaAIAs Hermetic Infrared Emitting Diodes Types OP223, OP224 Absolute Maximum Ratings T a = 25°C u n le ss otherwise noted • Narrow irradiance pattern • Enhanced temperature range • Small package size permits high

LD7535

Abstract: OP123 OP124 OP223 OP224 OP300 OP600 OP640 OP224 equivalent
Contextual Info: Hermetic Infrared Emitting Diode OP123, OP124 OP223, OP224 Features: • Hermetically sealed package • Mechanically and spectrally matched to other OPTEK devices • Designed for direct mount to PCBoard Description: Each OP123 and OP124 device is a 935 nanometer nm high intensity gallium arsenide infrared emitting diode

Contextual Info: Hi-Reliability GaAIAs Infrared Emitting Diode OP223, OP224 TX, TXV OP224 (S) Features: x Processed to OPTEK’s military screening program, patterned after MIL-PRF-19500 x Miniature hermetically sealed “pill” package x Twice the power output of GaAs at same drive current

Contextual Info: Hi-Reliability GaAIAs Infrared Emitting Diode OP223TX, OP223TXV OP224TX, OP224TXV OP224S Features: x Processed to OPTEK’s military screening program, patterned after MIL-PRF-19500 x Miniature hermetically sealed “pill” package x Twice the power output of GaAs at same drive current

AXP 202

Abstract: OP640SL OP223 OP224 OP300SL
Contextual Info: OPTEK P roduct Bulletin O P223 Jun e 1996 GaAIAs Hermetic Infrared Emitting Diodes Types OP223, OP224 Features A bsolute M axim um Ratings T a = 2 5 ° C unless otherw ise noted • Narrow irradiance pattern • Enhanced temperature range • Small package size permits high

Contextual Info: OPTEK P roduct B ulletin OP223TX, OP224S Septem ber 1996 Hi-Reliability GaAIAs Infrared Emitting Diodes Types OP223TX, OP223TXV, OP224TX, OP224TXV, OP224S Features -65° C to +150° C Storage Temperature Range.

OP223

Abstract: OP223TX OP223TXV OP224 OP224S OP224TX OP224TXV OP600
Contextual Info: Hi-Reliability GaAIAs Infrared Emitting Diode OP223, OP224 TX, TXV OP224 (S) Features: • Processed to OPTEK’s military screening program, patterned • • • • after MIL-PRF-19500 Miniature hermetically sealed “pill” package Twice the power output of GaAs at same drive current

AXP 202

Abstract: OP223 OP224 OP300SL OP640SL OP224 equivalent axp 202 ic
Contextual Info: OPTEK Product Bulletin OP223 June 1996 GaAIAs Hermetic Infrared Emitting Diodes Types OP223, OP224 Features Absolute Maximum Ratings T a = 25° C unless otherw ise noted • Narrow irradiance pattern • Enhanced temperature range • Small package size permits high

Contextual Info: Hermetic Infrared Emitting Diode OP123, OP124 OP223, OP224 Features: • Hermetically sealed package • Mechanically and spectrally matched to other OPTEK devices • Designed for direct mount to PCBoard Description: Each OP123 and OP124 device is a 935 nanometer nm high intensity gallium arsenide infrared emitting diode

Contextual Info: NPN Silicon Photodarlington OP300SL Series Features: • • • • • Narrow receiving angle Variety of sensitivity ranges Enhanced temperature range PCBoard mounting Mechanically and spectrally matched to OP123 and OP223 LEDs Description: Each device in this series is a NPN silicon photodarlington in a hermetically sealed pill package with a narrow

Contextual Info: 0 .O P T E K Product Bulletin OP223 June 1996 G aA IA s Hermetic Infrared Emitting Diodes Types OP223, OP224 ONS A R E IN IN C H E S M IL L IM E T E R S Features Absolute Maximum Ratings (Ta = 25° C unless otherwise noted) • Narrow irradiance pattern

xp 1325

Contextual Info: OPTEK Product Bulletin OP223TX, OP224S September 1996 Hi-Reliability GaAIAs Infrared Emitting Diodes Types OP223TX, OP223TXV, OP224TX, OP224TXV, OP224S Features • Processed to Optek’s Military screening program patterned after MIL-PRF-19500 • Miniature hermetically sealed “pill”

OP123

Abstract: OP223 OP300 OP300SL OP301SL OP302SL OP303SL OP304SL OP305SL
Contextual Info: NPN Silicon Photodarlington OP300SL Series Features: • • • • • Narrow receiving angle Variety of sensitivity ranges Enhanced temperature range PCBoard mounting Mechanically and spectrally matched to OP123 and OP223 LEDs Description: Each device in this series is a NPN silicon photodarlington in a hermetically sealed pill package with a narrow

Contextual Info: Hi-Reliability GaAIAs Infrared Emitting Diode OP223, OP224 TX, TXV OP224 (S) Features: • Processed to OPTEK’s military screening program, patterned • • • • after MIL-PRF-19500 Miniature hermetically sealed “pill” package Twice the power output of GaAs at same drive current

IR 4011

Abstract: IR4011 HA 4016
Contextual Info: 0 . OPTEK Product Bulletin OP223TX June 1993 Hi-Reliability GaAIAs Infrared Emitting Diodes Types OP223TX, OP223TXV, OP224TX, OP224TXV Features Absolute Maximum Ratings Ta = 25°C unless otherwise noted • Processed to Optek’s Military screening program patterned after

LKS 210

Abstract: OP301 DDG0140 FW-100 OP123 OP30 OP302 OP303 0P302
Contextual Info: OPTEK TECHNOLOGY INC QtE 1> | t , 7 T a s a o o / Optoelectronics' Division T R W Electronic Ccm ponants Group ü o o “ m a ? l ifp & T Product Bulletin 5091 January 1985 R m w NPN Silicon Photodarlingtons Types QP30Û, QP301, QP302, QP303, OP3Q4, OP3Q5

OP644SL

Abstract: OP123 OP223 OP641 OP641SL OP642SL OP643SL
Contextual Info: OPTEK Product Bulletin OP641SL June 1996 NPN Silicon Phototransistors Types OP641SL, OP642SL, OP643SL, OP644SL Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • • • • • Collector-Emitter Voltage . 25 V

OP123

Abstract: OP223 OP600A OP600B OP600C
Contextual Info: OPTEK Product Bulletin OP6OOA June 1996 NPN Silicon Phototransistors Types OP6OOA, OP6OOB, OP6OOC DIMENSIONS ARE IN INCHES (MILLIMETERS Features Absolute Maximum Ratings (T a = 25° C unless otherwise noted) • • • • • Collector-Emitter Voltage . 25V

Contextual Info: 0 . OPTEK Product Bulletin O P602TX /V Sep tem ber 1996 Hi-Reliability NPN Silicon Phototransistors Types OP602TX/V, QP603TX/V, OP6Q4TX/V, QP604S Features A b so lute M axim um Ratings Ta = 2 5 ° C unless otherw ise noted • Processed to Optek's military

OP123

Abstract: OP124 OP140 OP165 OP166 OP169 OP223 OP265 OP266
Contextual Info: Converting Radiant Intensity in Units of mW/cm2 to mW/sr. Application Bulletin 222 Radiant intensity is commonly measured in units of power per steradian and power per area. The SI standard is power per steradian. Optek’s standard is power per area. Many customers will design their

M56789FP

Abstract: OP223 VM334 VM432 VM30 VM202
Contextual Info: MITSUBISHI <CONTROL / DRIVER IC> M56789FP 4 CHANNEL ACTUATOR DRIVER DESCRIPTION PIN CONFIGURATION TOP VIEW The M56789FP is a semiconductor integrated circuit in order to drive 4ch actuator. FEATURES APPLICATION CD-ROM, DVD, DVD-ROM etc. 1 42 MUTE1 2 41 VREF

TIL149

Abstract: HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W
Contextual Info: ¿£i^±=<.-=is=a. L FASCO INDS/ Part Number SENISYS Replaced By 40E D 3411736 ^ Part Number Replaces ÜQQ1 3 3 Ô By CLI800 . S-870-T55 C L I8 0 0 A . S-875-T55 C L I8 0 0 M . S-870-N55 C L I8 0 0 M A .S-875-N55