ONR 20 Search Results

Contextual Info: ADAM TECH D IN 41612 CONNECTORS ONR SERIES ADAM TECHNOLOGIES INC. INTRODUCTION: Adam Tech DNR Series is an internationally accepted two piece PC board connector system which conforms to DIN 41612, IEC 603-2 and MIL-C-55301 standards. This series is compatible

HAT1046R

Contextual Info: HAT1046R Silicon P Channel Power MOS FET Power Switching HITACHI 2nd. Edition January 1999 Features • Low on-resistance • R Ds onr 3 0 m ii t o ( at v g s = -4V C apable o f -4 V gate drive • Low drive current • H igh density m ounting Outline SOP-8

S 5 F 10 N 80 A

Contextual Info: E9 OPTOELECTRONICS OPTOCOUPLERS P h o to tr a n s is to r O u tp u t; G a A s In p u t c o n t. CTI P a rt 6] BASE ANODE [Ï B VCeo <10m £ l F<%) b v cbo A g e n c y / Ipprov a ls PI <g *ONr tOFF (V ) (V ) (M S) V IS O N um ber m in m ax m in m in m ax

Contextual Info: BSS138 Small Signal MOSFET N-Channel 3 DRAIN * “G” Lead Pb -Free Features: SOT-23 3 1 *Low On-Resistance : 3.5 Ω *Low Input Capacitance: 40PF *Low Out put Capacitance : 12PF *Low Threshole :1 .5V *Fast Switching Speed : 20ns GATE 1 2 2 SOURCE Application:

BSS138/J1

Abstract: BSS138 onr 20
Contextual Info: BSS138 Small Signal MOSFET N-Channel 3 DRAIN SOT-23 Features: 3 1 *Low On-Resistance : 3.5 Ω *Low Input Capacitance: 40PF *Low Out put Capacitance : 12PF *Low Threshole :1 .5V *Fast Switching Speed : 20ns GATE 1 2 2 SOURCE Application: * DC to DC Converter

tf 3621

Abstract: 1575R 3621 c 3621
Contextual Info: S T S 3621 S amHop Microelectronics C orp. Oct. 24 2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 3A R DS (ON) ( m Ω ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -2A R DS (ON) ( m Ω )

stm8309

Abstract: EQUIVALENT STM8309 M8309 STM830
Contextual Info: STM8309 Green Product SamHop Microelectronics Corp. Oct.13, 2006 Dual Enhancement Mode Field Effect Transistor N and P Channel (N-Channel) PRODUCT SUMMARY VDSS ID 30V 7A RDS(ON) ( m Ω ) (P-Channel) PRODUCT SUMMARY Max VDSS ID -30V -6A RDS(ON) ( m Ω )

U403D

Contextual Info: S T U403D S amHop Microelectronics C orp. Apr.14 2007 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 40V 11A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -9A R DS (ON) ( m W )

STM8309

Abstract: M8309
Contextual Info: S T M8309 S amHop Microelectronics C orp. Oct.13, 2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -6A R DS (ON) ( m W )

STA6611

Contextual Info: STA6611 SamHop Microelectronics Corp. Nov. 22, 2006 Dual Enhancement Mode Field Effect Transistor N and P Channel (N-Channel) PRODUCT SUMMARY VDSS RDS(ON) ( m Ω ) ID Max VDSS ID -30V -6.6A RDS(ON) ( m Ω ) Max 35 @ VGS = -10V 23 @ VGS = 10V 30V (P-Channel)

STU309DH

Abstract: stu309 stu309d U309DH 309d TO-252-4L
Contextual Info: S T U309DH S amHop Microelectronics C orp. Apr 20 2007 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 30V 18A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -14A R DS (ON) ( m Ω )

Contextual Info: S T U404D S amHop Microelectronics C orp. S ep 14 2006 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 40V 16A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -12A

Contextual Info: S T S 3621 S amHop Microelectronics C orp. Oct. 24 2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 3A R DS (ON) ( m Ω ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -2A R DS (ON) ( m Ω )

T1 BC557

Abstract: acer battery pinout led acer 1N414 1N4148 ACE1202 BC557 acer schematic diagram
Contextual Info: August 2001 ACE1202R Data Encryption Standard DES Receiver General Description Features The ACE1202R is a custom receiver implementing the DES algorithm. The receiver is used to decrypt a pulse-width modulated (PWM) encrypted signal transmitted by a radio frequency

Contextual Info: S T U404DF S amHop Microelectronics C orp. S ep 25 2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 40V 16A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -12A R DS (ON) ( m W )

M9930

Contextual Info: S T M9930A S amHop Microelectronics C orp. Dec.20, 2005 2N and 2P Channel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y N-C hannel R DS (ON) ( m W ) V DS S ID 30V 6A P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S ID -30V

IC 2025

Abstract: U405DH
Contextual Info: S T U405DH S amHop Microelectronics C orp. Nov,20 2007 ver1.0 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 40V 11A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V - 9A

U405D

Abstract: STU405D 2525l
Contextual Info: S T U405D S amHop Microelectronics C orp. Nov,24 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 40V 16A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -12A R DS (ON) ( m W )

STU407D

Abstract: U407D TU407D
Contextual Info: S T U407D S amHop Microelectronics C orp. J uly 27 2006 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 40V 16A P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W )

M9930

Contextual Info: S T M9930A Green Product S amHop Microelectronics C orp. Dec.20, 2005 2N and 2P Channel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y P -C hannel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 6A R DS (ON) ( m Ω ) Max V DS S ID -30V

stu409dh

Abstract: TO-252-4L stu409d
Contextual Info: S T U409DH S amHop Microelectronics C orp. May 29 2007 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 40V 18A P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S

M8358S

Contextual Info: S T M8358S S amHop Microelectronics C orp. Oct.28, 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7.2A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S

stu404d

Abstract: U404D TU404D
Contextual Info: S T U404D S amHop Microelectronics C orp. Oct, 03 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 40V 16A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -12A R DS (ON) ( m W )

stu312d

Abstract: pf 312D U312D To-252-4 stu312
Contextual Info: S T U312D S amHop Microelectronics C orp. Oct 08 2008 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 30V 18A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -14A R DS (ON) ( m Ω )