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    ON SEMICONDUCTOR DATE CODE DIODE Search Results

    ON SEMICONDUCTOR DATE CODE DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM9513ADIB
    Rochester Electronics LLC AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 PDF Buy
    ICL7667MJA
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    CA3140AT/B
    Rochester Electronics LLC CA3140 - Operational Amplifier, 1 Func, 15000uV Offset-Max, BIMOS PDF Buy
    CA3140T
    Rochester Electronics LLC CA3140 - Operational Amplifier, 1 Func, 15000uV Offset-Max, BIMOS, MBCY8 PDF Buy
    CA3140AT
    Rochester Electronics LLC CA3140 - Operational Amplifier, 1 Func, 5000uV Offset-Max, BIMOS, MBCY8 PDF Buy

    ON SEMICONDUCTOR DATE CODE DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Schottky

    Contextual Info: RB551V-40 Taiwan Semiconductor Small Signal Product Schottky Barrier Diode FEATURES - Surface Mount Device Type - Pb free and RoHS compliant - Green compound Halogen free with suffix "G" on packing code and prefix "G" on date code SOD-323 MECHANICAL DATA


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    RB551V-40 OD-323 OD-323 MIL-STD-202, C/10s RB551V-40) S1402011 Schottky PDF

    Contextual Info: ES0406D1 Taiwan Semiconductor Small Signal Product Fast Recovery Rectifier Diode FEATURES - Surface Mount Device Type - Moisture sensitivity level 1 - Pb free and RoHS compliant - Green compound Halogen free with suffix "G" on packing code and prefix "G" on date code


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    ES0406D1 OD-123 OD-123 MIL-STD-202, C/10s LIMITD0406D1 ESD0406D1-M0 ESD0406D1 S1402008 PDF

    Contextual Info: RS1006D1 Taiwan Semiconductor Small Signal Product Fast Recovery Rectifier Diode FEATURES - Surface Mount Device Type - Moisture sensitivity level 1 - Pb free and RoHS compliant - Green compound Halogen free with suffix "G" on packing code and prefix "G" on date code


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    RS1006D1 OD-123 OD-123 MIL-STD-202, C/10s RS1006D1-M0 S1402007 PDF

    Contextual Info: BZX85C3V3 - BZX85C56 Zener Diodes Tolerance = 5% DO-41 Glass Case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The


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    BZX85C3V3 BZX85C56 DO-41 PDF

    trace code TO-220

    Abstract: J3307D-1 SWITCH IC J3307 transistor Electronic ballast 3307D
    Contextual Info: FJP3307D High Voltage Fast Switching NPN Power Transistor FJP3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram


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    FJP3307D FJP3307D O-220 FJP3307DH1 FJP3307DH1TU FJP3307DH2 FJP3307DH2TU FJP3307DTU trace code TO-220 J3307D-1 SWITCH IC J3307 transistor Electronic ballast 3307D PDF

    ISO 2768-mk

    Abstract: Fabry-Perot-Laser-Diode ISO-2768-mK
    Contextual Info: ZL60404 1.25 Gbps, 1310 nm Uncooled Fabry-Perot Laser Diode Module with Monitor Data Sheet December 2003 Ordering Information ZL60404TBD ZL60404TDD ZL60404TED ZL60404TFD TO-56 with lens ST type connector SC type connector FC type connector -40°C to +85°C


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    ZL60404 ZL60404TBD ZL60404TDD ZL60404TED ZL60404TFD ZL60404 ISO 2768-mk Fabry-Perot-Laser-Diode ISO-2768-mK PDF

    DIODE 85c 5V1

    Abstract: zener diode 85C 3v3 5.6V zener diode code color Zener diode 85c 3v9 zener 5v6 1w zener diode 85C 4v3 diode zener 3v9 DIODE 85c 4V3 zener diode voltage list 1.2v BZX85C18
    Contextual Info: BZX85C3V3 - BZX85C56 Zener Diodes Tolerance = 5% DO-41 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TA = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 50°C, Lead Length = 3/8” Derate above 50°C TJ, TSTG


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    BZX85C3V3 BZX85C56 BZX85C56 DO-41 BZX85C3V6 BZX85C3V9 BZX85C4V3 BZX85C4V7 DIODE 85c 5V1 zener diode 85C 3v3 5.6V zener diode code color Zener diode 85c 3v9 zener 5v6 1w zener diode 85C 4v3 diode zener 3v9 DIODE 85c 4V3 zener diode voltage list 1.2v BZX85C18 PDF

    F05U60S

    Abstract: F05U60 FFPF05U60STTU F05U6 FFPF05U60STU AN4149
    Contextual Info: FFPF05U60S FFPF05U60S Features • High voltage and high reliability • High speed switching • Low forward voltage Applications • • • • General purpose Switching mode power supply Free-wheeling diode for motor application Power switching circuits


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    FFPF05U60S O-220F FFPF05U60S AB-40: AN-4149: FFPF05U60STTU FFPF05U60STU F05U60S F05U60 F05U6 AN4149 PDF

    DIODE 85c 5V1

    Abstract: BZX85C18
    Contextual Info: BZX85C3V3 - BZX85C56 Zener Diodes Tolerance = 5% DO-41 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TA = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 50°C, Lead Length = 3/8” Derate above 50°C TJ, TSTG


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    BZX85C3V3 BZX85C56 BZX85C56 DO-41 BZX85C3V6 BZX85C3V9 BZX85C4V3 BZX85C4V7 DIODE 85c 5V1 BZX85C18 PDF

    1N4745A

    Abstract: 1W ZENER DIODE zener diode marking code pm Marking 47
    Contextual Info: 1N4728A - 1N4758A Zener Diodes Tolerance = 5% DO-41 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TJ, TSTG Ta = 25°C unless otherwise noted Value Units Power Dissipation @ TL  50C, Lead Length = 3/8” Parameter 1.0 W Derate above 50C


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    1N4728A 1N4758A 1N4758A DO-41 1N4729A 1N4730A 1N4731A 1N4732A 1N4745A 1W ZENER DIODE zener diode marking code pm Marking 47 PDF

    IXYS DATE CODE

    Contextual Info: DSA 120X200LB Schottky Diode Gen2 VRRM = 200 V IDAV = 2x 65 A VF = 0.67 V High Performance Schottky Diode Low Loss and Soft Recovery Parallel Legs A2 Part number DSA120X200LB n.c. A1 9 8 7 Preliminary data Iso la to ted he su at rfa sin ce k 1 3 2 4 6 5 K2


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    120X200LB DSA120X200LB E72873 20130613a IXYS DATE CODE PDF

    MMBV105GLT1

    Abstract: MMBV105GLT1G
    Contextual Info: MMBV105GLT1 Preferred Device Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features http://onsemi.com


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    MMBV105GLT1 MMBV105GLT1/D MMBV105GLT1 MMBV105GLT1G PDF

    MMVL105GT1

    Abstract: MMVL105GT1G
    Contextual Info: MMVL105GT1 Preferred Device Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features http://onsemi.com


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    MMVL105GT1 MMVL105GT1/D MMVL105GT1 MMVL105GT1G PDF

    M1MA151WKT1

    Abstract: M1MA151WKT1G M1MA152WKT1 M1MA152WKT1G
    Contextual Info: M1MA151WKT1, M1MA152WKT1 Preferred Device Common Cathode Silicon Dual Switching Diodes These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low


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    M1MA151WKT1, M1MA152WKT1 SC-59 M1MA151WKT1 M1MA151WKT1/D M1MA151WKT1 M1MA151WKT1G M1MA152WKT1 M1MA152WKT1G PDF

    Diode marking CODE 5M SOD

    Abstract: 5M MARKING CODE SCHOTTKY DIODE RB521S30T1G 1n05 NSVRB521 RB521S30T1
    Contextual Info: RB521S30T1G, NSVRB521S30T1G, RB521S30T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable


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    RB521S30T1G, NSVRB521S30T1G, RB521S30T5G OD-523 RB521S30T1/D Diode marking CODE 5M SOD 5M MARKING CODE SCHOTTKY DIODE RB521S30T1G 1n05 NSVRB521 RB521S30T1 PDF

    MMVL3102T1

    Abstract: MMVL3102T1G
    Contextual Info: MMVL3102T1 Preferred Device Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features • High Q with Guaranteed Minimum Values at VHF Frequencies


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    MMVL3102T1 MMVL3102T1/D MMVL3102T1 MMVL3102T1G PDF

    Contextual Info: M1MA141WKT1G, M1MA142WKT1G, SM1MA142WKT1G, Common Cathode Silicon Dual Switching Diode http://onsemi.com This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low


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    M1MA141WKT1G, M1MA142WKT1G, SM1MA142WKT1G, M1MA141WKT1/D PDF

    M1MA152AT1

    Contextual Info: ON Semiconductort Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.


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    M1MA151/2AT1 inch/3000 M1MA151/2AT3 inch/10 M1MA151AT1 M1MA152AT1 M1MA152AT1 PDF

    high power fast recovery diodes

    Abstract: MU diode MARKING CODE
    Contextual Info: ON Semiconductort Common Cathode Silicon Dual Switching Diodes M1MA151WKT1 M1MA152WKT1 ON Semiconductor Preferred Devices These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low


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    M1MA151/2WKT1 inch/3000 M1MA151/2WKT3 inch/10 M1MA151WKT1 M1MA152WKT1 M1MA151WKT1/D high power fast recovery diodes MU diode MARKING CODE PDF

    Contextual Info: ON Semiconductort M1MA151WAT1 M1MA152WAT1 Common Anode Silicon Dual Switching Diodes ON Semiconductor Preferred Devices These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low


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    M1MA151/2WAT1 inch/3000 M1MA151/2WAT3 inch/10 M1MA151WAT1 M1MA152WAT1 M1MA151WAT1/D PDF

    DAN222

    Abstract: DAN222G DAN222T1 DAN222T1G
    Contextual Info: DAN222 Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−416/SC−90 package which is designed for low power surface mount applications, where board space is at a


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    DAN222 OT-416/SC-90 DAN222/D DAN222 DAN222G DAN222T1 DAN222T1G PDF

    Contextual Info: ON Semiconductort Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.


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    M1MA151/2KT1 inch/3000 M1MA151/2KT3 inch/10 M1MA151KT1 M1MA152KT1 M1MA152KT1 PDF

    MMDL6050T1G

    Abstract: MMDL6050 SMMDL6050T1G
    Contextual Info: MMDL6050T1G, SMMDL6050T1G Switching Diode Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  http://onsemi.com Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    MMDL6050T1G, SMMDL6050T1G AEC-Q101 OD-323 MMDL6050T1/D MMDL6050T1G MMDL6050 PDF

    Contextual Info: M1MA141WAT1G, M1MA142WAT1G, SM1MA142WAT1G Common Anode Silicon Dual Switching Diode http://onsemi.com This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low


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    M1MA141WAT1G, M1MA142WAT1G, SM1MA142WAT1G SC-70 AEC-Q101 SC-70 OT-323) M1MA141WAT1G PDF