ON 4962 Search Results

AMP Micro-MaTch Miniature Connector

Abstract: X-338069-X 8-188275-0 7-215079-6 9-215083-0 madison cable 2651 654173-2 733280-3 simel HIGH VOLTAGE CONNECTORS
Contextual Info: Ä I W I I » Micro-MaTch Miniature Connector System Table of Contents Miniature Connector System 2 System Overview/Technical Data 3 Applications 3D 4 Applications 2D 5 Female-on-Board Connector Top Entry 6 Female-on-Board Connector Side Entry 7 Female-on-Board Connector Surface Mount Device SMD

CAPACITOR 100NF 63V

Abstract: tantalus capacitor class h power amplifier schematic AN2134 TS4962 TS4962M class d amplifier schematic diagram 100nF 63V 10 pitch 5 capacitor
Contextual Info: AN2134 Application note TS4962M Using the mono class D demo board Introduction The mono class D demo board is designed for the TS4962M class D audio amplifier. The TS4962M device, in a flip-chip package, is mounted on an adapter board with DIP connectors see Section 5: Flip-chip to DIP adapter on page 5 which is, in turn, mounted on

Contextual Info: 1 ^ z. 96 I9 £ 0 PS B DATE R E V. ‘ ON ON l M V H Q £ f M DON tT¥T NO. 6.Sep.2001 48701 8.Ma r.2002 49626 ti DR. D E S O R I P T 1ON Üá APPD. O H K. K. I NOUE REVISED DIMENSION APPD. O.HASH 10UOH I K . I NOUE ±0.2 A lo . 3| Á |o - 1 . 2| T E R M I N A L

Contextual Info: 1 ^ z. 96 I9 £ 0 PS B DATE R E V. ‘ ON ON l M V H Q £ f M DON tT¥T NO. 6.Sep.2001 48701 8.Ma r.2002 49626 ti DR. D E S O R I P T 1ON Üá APPD. O H K. K. I NOUE REVISED DIMENSION APPD. O.HASH 10UOH I K . I NOUE ±0.2 A lo . 3| Á |o - 1 . 2| T E R M I N A L

Contextual Info: PHOTONIC Cadmium Sulfoselenide CdS Photoconductive Photocells Type PDV-P500X DETECTORS INC. INDUSTRY EQUIVALENTS VT400 & NSL-4962 PACKAGE DIMENSIONS INCH [mm] ±.010 [0.25] .366 [9.30] +.015 [0.38] -.010 [0.25] .079 [2.00] ±.010 [0.25] .433 [11.00] EPOXY ON LEADS 3mm MAX

IRF5210

Abstract: 91434A
Contextual Info: PD - 91434A IRF5210 HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.06Ω G ID = -40A S Description

user interface

Abstract: PCI AHB DMA DMA with AHB
Contextual Info: Eureka Technology EP240 AHB Bus Master Product Summary FEATURES • Supports AHB bus interface to the ARM CPU. • User interface designed for high speed access to any slave devices on the AHB Bus. • User specified single or burst data access on the AHB interface and user interface.

IRF5210

Contextual Info: PD - 91434A IRF5210 HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.06Ω G ID = -40A S Description

Contextual Info: This document was generated on 10/08/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: 49624-0695 Active Description: 4.20mm Wire-to-Wire TPA Connector for Female Housing, 6 Circuits, UL94V-0, Ivory Documents: 3D Model Drawing PDF

UL94-V2 REACH

Abstract: 49624
Contextual Info: This document was generated on 08/10/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: 49623-1890 Active Description: 4.20mm Wire-to-Wire TPA Connector for Male Housing, 18 Circuits, UL94V-2, White Documents: 3D Model Drawing PDF

Contextual Info: This document was generated on 08/16/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Description: 49624-1295 Active 4.20mm Wire-to-Wire TPA Connector for Female Housing, 12 Circuits, UL94V-0, Ivory Documents: 3D Model Drawing PDF

Contextual Info: This document was generated on 08/16/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: 49623-1890 Active Description: 4.20mm Wire-to-Wire TPA Connector for Male Housing, 18 Circuits, UL94V-2, White Documents: 3D Model Drawing PDF

Contextual Info: HUFA75639S3R4851 TM Data Sheet November 2000 File Number 4962 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFETs is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per

Contextual Info: This document was generated on 01/30/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: 0496260982 Active Description: 4.20mm Wire-to-Wire Lower TPA for Male Housing, 9 Circuits Documents: 3D Model Drawing PDF Packaging Specification PK-49623-001 (PDF)

Contextual Info: This document was generated on 01/16/2013 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: 49627-0382 Active Description: 4.20mm Wire-to-Wire Lower TPA for Female Housing, 3 Circuits Documents: 3D Model Drawing PDF Packaging Specification PK-49623-001 (PDF)

ISA BUS spec

Abstract: isa bus PCI-to-ISA Eureka pci to isa bridge EC150 pci-to-isa ec150
Contextual Info: Eureka Technology EC150 PCI-to-ISA Bridge Product Summary FEATURES • PCI spec 2.1 and 2.2 compliant • Convert PCI transaction to ISA bus transaction • Function as PCI target on PCI bus • Function as ISA master on ISA bus • Map PCI address space to ISA address space through Base Address Register

R4851

Abstract: AN9321 AN9322 HUFA75639S3R4851 TB334
Contextual Info: HUFA75639S3R4851 Data Sheet November 2000 File Number 4962 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET Title UFA 639 R48 bt A, 0V, 25 m, This N-Channel power MOSFETs is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per

IXYS DSA 110-16F

Abstract: 110-16F IXYS DSA 110-18F 110-18F DO-205 IXYS DSA D-68623 DO30 110-08F 110-12F
Contextual Info: DS 110 DSA 110 Rectifier Diodes Avalanche Diodes V V 900 1300 1300 1700 1900 V - VRRM = 800 - 1800 V IF RMS = 250 A IF(AV)M = 160 A DO-205 AC V(BR)min ① V R R M V RSM DSI 110 DSAI 110 800 1200 Anode Cathode on on DS DS 1300 1200 1750 1600 1950 1800 stud

IXYS DSA

Abstract: c 9450 9450 transistor diode avalanche DSA D-68623 75-16B ixys dsi
Contextual Info: DS 75 DSA 75 Rectifier Diodes Avalanche Diodes VRSM V BR min ① VRRM DSI 75 DSAI 75 VRRM = 800 - 1800 V IF(RMS) = 160 A I F(AV)M = 110 A DO-203 AB Anode Cathode on stud on stud C A V V V 900 1300 - 800 1200 DS 75-08B DS 75-12B DSI 75-08B DSI 75-12B 1300 1700

IXYS DSEI 2X121

Abstract: IXYS DSEI 2X121-02a 2x121-02a IXYS DSEI 2X61 DO-205 2X61-10B 110-12F dsei 2x60 110-16F 6206 sot 89
Contextual Info: DS 75 DSA 75 Rectifier Diodes Avalanche Diodes VRSM V BR min ① VRRM DSI 75 DSAI 75 VRRM = 800 - 1800 V IF(RMS) = 160 A I F(AV)M = 110 A DO-203 AB Anode Cathode on stud on stud C A V V V 900 1300 - 800 1200 DS 75-08B DS 75-12B DSI 75-08B DSI 75-12B 1300 1700

1708A

Contextual Info: DS 17 DSA 17 Rectifier Diodes Avalanche Diodes V RSM V BR min ① V RRM VRRM = 800 - 1800 V IF(RMS) = 40 A I F(AV)M = 25 A DO-203 AA Anode Cathode on stud on stud C A V V V 900 1300 - 800 1200 DS 17-08A DS 17-12A DSI 17-08A DSI 17-12A 1300 1700 1900 1300 1750

n02a

Abstract: SJ036197
Contextual Info: B REV. 96L9E0PS 'ON O N I M V i d Q # « ^ DON NO. DATE DESCRIPTION 5 .Sep. 2001 48701 8.Ma r.2002 49626 R E V IS E D 23.Apr.2003 51997 ADDED 11.May.2004 054865 AN DR . DIMENSION DIMENSION ADDITIONAL MATTER T.NEM0 T 0 TERMINAL |0 — 1 .2| a m & % APPD.

Contextual Info: 3 1 . B Z 6 t9 £ 0 rs ' ON REV. 0NIM VHQ 4#M ü ± 0 .2 A i i ñ s D E SC R IP T IO N DON NO. DATE È DR. ÈÜ APPD. APPD. CHK. K.I NOUE O.HASH I0UCH I ITEMS K.I NOUE O.HASH 16UCH I DIMENSION K.I NOUE O.HASH 10UCHI ITEMS K.I NOUE O.HASH I GUCH I D I M E N S I ON

2SK310

Abstract: GD100D
Contextual Info: HITACHI/-COPTOELECTRONICS} L" T 496205 73 Hl IA C H I/ U P lO E L E C IK U N iU i; DE I 4 4 T b B 0 S GD100D4 73C 1 D 0 0 4 D T -3 ? -// 2SK3lO,2SK31T SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER • FEATURES • Low On-Resistance.