ON 4800 Search Results

MO-193AA

Abstract: AN7254 AN7260 ITF87052SVT SC-95 TB370 MO-193-AA
Contextual Info: ITF87052SVT Data Sheet File Number 4800.3 Features 3A, 20V, 0.115 Ohm, P-Channel, 2.5V Specified Power MOSFET • Ultra Low On-Resistance - rDS ON = 0.115Ω, VGS = −4.5V - rDS(ON) = 0.120Ω, VGS = −4.0V - rDS(ON) = 0.190Ω, VGS = −2.5V Packaging

AN7254

Abstract: AN7260 ITF87052SVT MO-193AA SC-95 TB370
Contextual Info: ITF87052SVT Data Sheet 3A, 20V, 0.115 Ohm, P-Channel, 2.5V Specified Power MOSFET Packaging TSOP-6 4 3 File Number 4800.4 Features • Ultra Low On-Resistance - rDS ON = 0.115Ω, VGS = −4.5V - rDS(ON) = 0.120Ω, VGS = −4.0V - rDS(ON) = 0.190Ω, VGS = −2.5V

Contextual Info: ITF87052SVT TM Data Sheet 3A, 20V, 0.115 Ohm, P-Channel, 2.5V Specified Power MOSFET Packaging TSOP-6 4 3 File Number 4800.4 Features • Ultra Low On-Resistance - rDS ON = 0.115Ω, VGS = −4.5V - rDS(ON) = 0.120Ω, VGS = −4.0V - rDS(ON) = 0.190Ω, VGS = −2.5V

Contextual Info: ITF87052SVT TM Data Sheet 3A, 20V, 0.115 Ohm, P-Channel, 2.5V Specified Power MOSFET Packaging TSOP-6 4 3 File Number 4800.4 Features • Ultra Low On-Resistance - rDS ON = 0.115Ω, VGS = −4.5V - rDS(ON) = 0.120Ω, VGS = −4.0V - rDS(ON) = 0.190Ω, VGS = −2.5V

OT63E3

Abstract: OETL400 OETL200 OT25E OT32E8 bs 5419 vde 0660 OT16E3 BS 5419 OT45E3 1SCA022551R3610
Contextual Info: Low Voltage Products SwitchLine, Load Break Switches / Switch-Disconnectors 16.160 A, 690 V 200.3150 A, 1000 V Brochure OT_OETL1 GB 04_06 1SCC301001C0201 I ON O OFF I ON OT16E3 O OFF I ON O OFF I ON O OFF O OFF I ON I ON O OFF O OFF I ON I ON I ON O OFF

AN7254

Abstract: AN7260 ITF87052SVT SC-95 TB370 0190-S
Contextual Info: ITF87052SVT interrii J a n u a ry . Data Sheet PRELIMINARY 3A, 20V, 0.115 Ohm, P-Channel, 2.5V Specified Power MOSFET m File Num ber i 4800.2 Features • Ultra Low On-Resistance ‘ rDS ON = 0-115£2, v q s = -4 .5 V Packaging ‘ rDS(ON) = 0-120£2, v q s = -4 .0 V

3C80

Abstract: H8/3048F 3c80 material 68B9 SDA 555E 3C80 SPECIFICATIONS 1A80 207-010032 83 HC14 sd4841
Contextual Info: H8/3048F / H8/3047F On-Board Programming Examples H8/3048F Example of On-Board Programming Using High-Speed Serial Communication H8/3437F Example of On-Board Programming Using I2C Bus H8/3048F Example of 1-to-N On-Board Programming H8/3048F Example of On-Board Programming Using Parallel Interface

T89C51AC2-RLTIM

Abstract: T89C51AC2 T89C51CC01 TQFP44 80C51 80C52 PLCC44 fah 15 fuse
Contextual Info: 1. Features • 80C51 core architecture: – 256 bytes of on-chip RAM – 1 Kbytes of on-chip ERAM – 32 Kbytes of on-chip Flash memory Data Retention: 10 years at 85°C Read/Write cycle: 10k – 2 Kbytes of on-chip Flash for Bootloader – 2 Kbytes of on-chip EEPROM

object counter

Abstract: object counter circuit 80C51 PLCC44 T89C51CC01 VQFP44
Contextual Info: 1. Features • 80C51 core architecture: – 256 bytes of on-chip RAM – 1 Kbytes of on-chip ERAM – 32 Kbytes of on-chip Flash memory Data Retention: 10 years at 85°C Read/Write cycle: 10k – 2 Kbytes of on-chip Flash for Bootloader – 2 Kbytes of on-chip EEPROM

TTC 103

Abstract: PLCC44 T89C51CC01 TQFP44 80C51 12MHz osc
Contextual Info: 1. Features • 80C51 core architecture: – 256 bytes of on-chip RAM – 1 Kbytes of on-chip ERAM – 32 Kbytes of on-chip Flash memory Data Retention: 10 years at 85°C Read/Write cycle: 10k – 2 Kbytes of on-chip Flash for Bootloader – 2 Kbytes of on-chip EEPROM

at89c51cc03 code examples

Contextual Info: Features • • • • 80C51 Core Architecture 256 Bytes of On-chip RAM 2048 Bytes of On-chip ERAM 64K Bytes of On-chip Flash Memory – Data Retention: 10 Years at 85°C – Read/Write Cycle: 100K • 2K Bytes of On-chip Flash for Bootloader • 2K Bytes of On-chip EEPROM

89C51CC03UA

Abstract: 89c51cc03ca-Im VQFP-44 TTC 103 at89c51cc03 parallel programmer 80C51 AT89C51CC03 PLCC44 PLCC52 VQFP44
Contextual Info: Features • • • • 80C51 Core Architecture 256 Bytes of On-chip RAM 2048 Bytes of On-chip ERAM 64K Bytes of On-chip Flash Memory – Data Retention: 10 Years at 85°C – Read/Write Cycle: 100K • 2K Bytes of On-chip Flash for Bootloader • 2K Bytes of On-chip EEPROM

80C51

Abstract: AT89C51CC03 PLCC44 PLCC52 VQFP44 VQFP64 at89c51cc03 code examples AT89C51CC03C
Contextual Info: Features • • • • 80C51 Core Architecture 256 Bytes of On-chip RAM 2048 Bytes of On-chip ERAM 64K Bytes of On-chip Flash Memory – Data Retention: 10 Years at 85°C – Read/Write Cycle: 100K • 2K Bytes of On-chip Flash for Bootloader • 2K Bytes of On-chip EEPROM

89C51CC03UA-um

Abstract: 89C51CC03CA-UM at89c51cc03 parallel programmer AT89C51CC03UA-RDTUM AT89C51CC03UA-SLSUM 80C51 AT89C51CC03 PLCC44 PLCC52 VQFP44
Contextual Info: Features • • • • 80C51 Core Architecture 256 Bytes of On-chip RAM 2048 Bytes of On-chip ERAM 64K Bytes of On-chip Flash Memory – Data Retention: 10 Years at 85°C – Read/Write Cycle: 100K • 2K Bytes of On-chip Flash for Bootloader • 2K Bytes of On-chip EEPROM

89C51CC03CA-UM

Abstract: AT89C51CC03CA-RDTUM at89c51cc03 code examples IDT20 89C51CC03UA-um
Contextual Info: Features • • • • 80C51 Core Architecture 256 Bytes of On-chip RAM 2048 Bytes of On-chip ERAM 64K Bytes of On-chip Flash Memory – Data Retention: 10 Years at 85°C – Read/Write Cycle: 100K • 2K Bytes of On-chip Flash for Bootloader • 2K Bytes of On-chip EEPROM

Contextual Info: Features • • • • 80C51 Core Architecture 256 Bytes of On-chip RAM 2048 Bytes of On-chip ERAM 64K Bytes of On-chip Flash Memory – Data Retention: 10 Years at 85°C – Read/Write Cycle: 100K • 2K Bytes of On-chip Flash for Bootloader • 2K Bytes of On-chip EEPROM

89C51CC03UA

Abstract: 89C51CC03CA-UM 89C51CC03UA-UM VQFP64 AT89C51CC03UA-RLTUM at89c51cc03 parallel programmer 80C51 AT89C51CC03 PLCC44 PLCC52
Contextual Info: Features • • • • 80C51 Core Architecture 256 Bytes of On-chip RAM 2048 Bytes of On-chip ERAM 64K Bytes of On-chip Flash Memory – Data Retention: 10 Years at 85°C – Read/Write Cycle: 100K • 2K Bytes of On-chip Flash for Bootloader • 2K Bytes of On-chip EEPROM

IDT20

Abstract: at89c51cc03 code examples 4182H
Contextual Info: Features • • • • 80C51 Core Architecture 256 Bytes of On-chip RAM 2048 Bytes of On-chip ERAM 64K Bytes of On-chip Flash Memory – Data Retention: 10 Years at 85°C – Read/Write Cycle: 100K • 2K Bytes of On-chip Flash for Bootloader • 2K Bytes of On-chip EEPROM

80C51

Abstract: AT89C51CC03 PLCC44 PLCC52 VQFP44 VQFP64 4182N 89C51CC03CA-UM
Contextual Info: Features • • • • 80C51 Core Architecture 256 Bytes of On-chip RAM 2048 Bytes of On-chip ERAM 64K Bytes of On-chip Flash Memory – Data Retention: 10 Years at 85°C – Read/Write Cycle: 100K • 2K Bytes of On-chip Flash for Bootloader • 2K Bytes of On-chip EEPROM

at89c51cc03 parallel programmer

Abstract: at89c51cc03 code examples ccf um 80C51 AT89C51CC03 PLCC44 PLCC52 VQFP44 VQFP64 BIPOLAR MEMORY
Contextual Info: Features • • • • 80C51 Core Architecture 256 Bytes of On-chip RAM 2048 Bytes of On-chip ERAM 64K Bytes of On-chip Flash Memory – Data Retention: 10 Years at 85°C – Read/Write Cycle: 100K • 2K Bytes of On-chip Flash for Bootloader • 2K Bytes of On-chip EEPROM

89C51CC03UA-UM

Abstract: 89C51CC03UA atmel 89c51cc03ua AT89C51CC03UA-RLTUM AT89C51CC03CA-RLTUM AT89C51CC03UA-RDTUM AT89C51CC03UA-SLSUM at89c51cc03 parallel programmer AT89C51CC03C ccf um
Contextual Info: Features • • • • 80C51 Core Architecture 256 Bytes of On-chip RAM 2048 Bytes of On-chip ERAM 64K Bytes of On-chip Flash Memory – Data Retention: 10 Years at 85°C – Read/Write Cycle: 100K • 2K Bytes of On-chip Flash for Bootloader • 2K Bytes of On-chip EEPROM

Contextual Info: Features • • • • 80C51 Core Architecture 256 Bytes of On-chip RAM 2048 Bytes of On-chip ERAM 64K Bytes of On-chip Flash Memory – Data Retention: 10 Years at 85°C – Read/Write Cycle: 100K • 2K Bytes of On-chip Flash for Bootloader • 2K Bytes of On-chip EEPROM

DIN 18541

Abstract: Opto Coupler TLP 621 ic 741 clamper LM 10841 IEC 60061-1 TLHY46 smd glass zener diode color codes TDC 310 NTC an 17807 a Opto Coupler TLP 521
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book leds and displays vishay semiconductors vHN-db2101-0409 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

ZASW-2-50DR

Contextual Info: Switch SPDT , 50Ω ZASW-2-50DR+ Typical Performance Data FREQUENCY MHz 1 10 50 100 300 500 700 1000 1400 1800 2000 2400 2800 3000 3400 3600 4000 4500 4800 5000 INSERTION LOSS ISOLATION (dB) IN-OUT , "ON" (dB) IN-OUT , "OFF" IN (:1) OUT , "ON" OUT , "OFF"