ON 147 Search Results

3PDT switch

Abstract: 3pdt RIGHT ANGLE SLIDE SWITCH
Contextual Info: Series 47A: Miniature Rocker and Paddle Switches SERIES 47A Miniature Rocker and Paddle Switches In inches and millimeters SWITCH POSITION MODEL NO. ON ON ON (ON) ON 2-3 SP1 SP2 SP3 SP4 SP5 TERM. COMM. NONE NONE OFF OFF OFF OPEN .185 (4.70) Ø.094 (Ø2.39)

3C80

Abstract: H8/3048F 3c80 material 68B9 SDA 555E 3C80 SPECIFICATIONS 1A80 207-010032 83 HC14 sd4841
Contextual Info: H8/3048F / H8/3047F On-Board Programming Examples H8/3048F Example of On-Board Programming Using High-Speed Serial Communication H8/3437F Example of On-Board Programming Using I2C Bus H8/3048F Example of 1-to-N On-Board Programming H8/3048F Example of On-Board Programming Using Parallel Interface

78 DIODE SMD

Abstract: smd transistor 26
Contextual Info: Transistors IC SMD Type 60V Complementary PowerTrench MOSFET KDS8333C Features N-Channel 4.1 A, 30 V RDS ON = 80m RDS(ON) = 130m @ VGS = 10 V @ VGS =4.5V P-Channel -3.4 A, 30 V RDS(ON) = 130 m RDS(ON) = 200 m @ VGS =- 10 V @ VGS =-4.5V Low gate charge High performance trench technology for extremely low RDS(ON).

Contextual Info: Doc No. TT4-EA-14765 Revision. 1 Product Standards MOS FET FJ3P01130L FJ3P01130L Unit: mm • Package dimension Silicon P-channel MOSFET 2.0  Application 0.2 3  Battery FET  Load switch 2.0 0.25  Features Low drain-source ON resistance:RDS(on)max. = 10.0mΩ （VGS = -3.5 V)

E1006

Abstract: buz67 TO-238AA QS 424
Contextual Info: ôôD D • 88D Ö 23 s b 0 s 14714 00147m D 2 «sieg 'T '- 7 ? ~ J 3 BUZ67 SIEMENS AKTIENGESELLSCHAF_ N-Channel Main ratings a 400 V Draln-source voltage I^DS = 9,6 A Continuous drain current h Draln-source on-reslstance ^DS on = 0,4 Si Description

100C

Abstract: CYM1471 CYM1471LPS-70C CYM1471PS-70C CYM1481
Contextual Info: fax id: 2006 1CY M14 81 CYM1471 CYM1481 1024K x 8 SRAM Module 2048K x 8 SRAM Module Features are constructed from eight 1471 or sixteen (1481) 128K x 8 SRAMs in plastic surface-mount packages on an epoxy laminate board with pins. On-board decoding selects one of the

IRF5820

Abstract: IRF5806 IRF5800 SI3443DV 3D marking sot23 sot-23 Marking 3D
Contextual Info: PD - 93997A IRF5806 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -4.0A Description These P-channel MOSFETs from International Rectifier

Contextual Info: Doc No. TT4-EA-14734 Revision. 2 Product Standards MOS FET FC6B22100L FC6B22100L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.56 5 4 1 2 3 • Features  Low source-source ON resistance:Rss on typ. = 8.2 m （VGS = 4.5 V)

SMD Tantalum Capacitors

Abstract: CECC 30801-001
Contextual Info: VISHAY I N T ER T E C H N O L O GY , I N C . INTERACTIVE data book smd tantalum capacitors vishay sprague vse-db0006-1201e Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

PTN0805

Abstract: ORNV (Divider) MPMA (Divider) DFN (Divider) vr Molded, SOT-23 Thin Film Surface Mount Resistor/Capacitor Network
Contextual Info: VISHAY INTE R TE C HN O L O G Y , IN C . INTERACTIVE data book Vishay Dale thin film products vishay Dale thin film vse-db0024-1309 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Edgeboard Connectors

Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book EDGEBOARD CONNECTORS vishay DALE vsE-db0034-0907 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

IRF Power MOSFET code marking

Abstract: IRF MOSFET 10A P power MOSFET IRF data MOSFET 150 N IRF IRF n 30v MOSFET IRF 5804 IRF5800 IRF5801 MOSFET IRF 94 IRF5852
Contextual Info: PD - 95476A IRF5806PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -4.0A Description These P-channel MOSFETs from International Rectifier

Contextual Info: SM572168574EL3R September 25, 2001 Revision History • September 25, 2001 Modified Input Capacitance on page 5. • July 11, 2001 Modified AC Characteristics tRCD on page 7. Modified Ordering Information (Cycle Time) on page 16. • May 2, 2001 Datasheet released.

SMM0207

Abstract: OMM0207 562R OMM02070000000BS SMM020750
Contextual Info: SMM0207 Vishay Draloric Metal Film, Cylindrical Resistors FEATURES • Metal film resistor with high power rating • Stable metal film on high quality ceramic • Good thermal distribution • Pure tin termination on nickel barrier, plated on press fit steel caps

irg7i

Contextual Info: IRG7IC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • C Low VCE on Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Square RBSOA VCES = 600V INOM = 24A Benefits VCE(on) typ. = 1.60V G

Precision Potentiometers, Position Sensors

Abstract: 91/157/AET
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book precision potentiometers, Position sensors vishay vse-db0100-1310 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: 1GB Unbuffered SODIMM based on sTSOP DDR SDRAM 1GB DDR SDRAM MODULE (128Mx64 based on sTSOP 64Mx8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity (DDR400 Module) Revision 1.1 August 2003 Rev. 1.1 August. 2003 1GB Unbuffered SODIMM (based on sTSOP) DDR SDRAM

Contextual Info: PD - 97758 IRG7IC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • C Low VCE on Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Square RBSOA VCES = 600V INOM = 24A Benefits VCE(on) typ. = 1.60V

DDR333

Abstract: DDR400
Contextual Info: 1GB Unbuffered SODIMM based on sTSOP DDR SDRAM 1GB DDR SDRAM MODULE (128Mx64 based on sTSOP 64Mx8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity (DDR400 Module) Revision 1.3 November. 2004 Rev. 1.3 Novmber. 2004 1GB Unbuffered SODIMM (based on sTSOP) DDR SDRAM

Running eCos on LPC2214

Abstract: command words lcd display 16x2 USB-RS232 LCD 16X2 5V RS232 Driver MX26LV800BTC CS8900A driver lcd 16x2 lcd 16x2 instruction set 71V416 LPC2214
Contextual Info: AN10605 Running eCos on LPC2214 Rev. 01 — 1 August 2007 Application note Document information Info Content Keywords eCos, RTOS, LPC2214, Olimex Abstract Describes the steps to run eCos on Olimex LPCE-2214 evaluation board. AN10605 NXP Semiconductors Running eCos on LPC2214

RESISTANCE RS71Y

Abstract: rb 57 sfernice
Contextual Info: V I S H AY I N T E R T E C H N O L O GY, I N C . INTERACTIVE data book THICK FILM, METAL FILM AND WIREWOUND TECHNOLOGIES VISHAY SFERNICE VSE-DB0098-1002 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

DDR266

Abstract: DDR333 K4H560838E
Contextual Info: 512MB Unbuffered SODIMM based on sTSOP DDR SDRAM DDR SDRAM Unbuffered SODIMM 200pin Unbuffered SODIMM based on 256Mb E-die (x8) with 64-bit Non ECC Revision 1.2 December. 2003 Rev. 1.2 December. 2003 512MB Unbuffered SODIMM(based on sTSOP) DDR SDRAM Revision History

DDR333

Abstract: DDR400 K4H560838E
Contextual Info: 512MB Unbuffered SODIMM based on sTSOP DDR SDRAM DDR SDRAM Unbuffered SODIMM (DDR400 Module) 200pin Unbuffered SODIMM based on 256Mb E-die 64/72-bit ECC/Non ECC Revision 1.1 August. 2003 Rev. 1.1 August. 2003 512MB Unbuffered SODIMM(based on sTSOP) DDR SDRAM

Contextual Info: 512MB Unbuffered SODIMM based on sTSOP DDR SDRAM DDR SDRAM Unbuffered SODIMM (DDR400 Module) 200pin Unbuffered SODIMM based on 256Mb E-die 64/72-bit ECC/Non ECC Revision 1.2 March. 2004 Rev. 1.2 March. 2004 512MB Unbuffered SODIMM(based on sTSOP) DDR SDRAM