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NDS8936

Contextual Info: National Semiconductor July 1996 NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These IM-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

Contextual Info: Schottky Barrier Diode single Diode mwm o u t lin e Package : M1F M1FP3 » y -K -r-» 30V 1.29A Feature C a th o d e n w ir k |P 6 N • /J ^ S M D • Small SMD • Ì81S V f =0.4V • Ultra-Low V f=0.4V I — w — ^P yM dfr W T ype No. Main Use Date code

Contextual Info: SPECIFICATION PART NO. SUMIDA TYPE 1. DIMENSION UNIT S - 7 G D SAMPLE NO. 0 2 3 7 —T 1 8 9 tan 7.3 ~0.3 * DIMENSION DOES NOT INC1J1DE SOLDER USED OK COIL. * TERMINAL FITCH IS MEASURED AT THE BASE. (NOT FROM TIP OF THE PIN. ) 2. CONNECTION (BOTTOM) 3. TURNS. WIRE AND CORE

x72d

Abstract: 66205TF X51c X60CZ
Contextual Info: HD66205 - Dot Matrix Liquid Crystal Graphic Display Common Driver with 80-Channel Outputs Description The HD66205F/HD66205FL/HD66205TF/HD 66205TFL/HD66205T/HD66205TL, the row LCD driver, features low output impedance and as many as 80 LCD outputs powered by 80 internal LCD