OF TRANSISTOR 13 Search Results

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The BB1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic

C11531E

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BP1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching The BP1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic appliances and OA

diode BB102

Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,

UPB2060

Contextual Info: UPB2060 60W PEP, 1.8-2.0 GHz, 26V, Class AB, Broadband RF Power NPN Bipolar Transistor The UPB2060 is a high-power COMMON EMITTER bipolar transistor capable of providing 60 Watts of Class AB RF PEP output power over the band 1.8-2.0 GHz. This transistor is specifically designed

transistor tt 2222

Abstract: Trimmer 10-60 pf transistor h 1061 15 w RF POWER TRANSISTOR NPN bly87c IEC134 yl 1060
Contextual Info: PHILIPS INTERNATIONAL b SE D • 7110flSb GübBSt.3 «PHIN BLY87C J V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and

BF840

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF840 NPN medium frequency transistor Product specification Supersedes data of 1999 Apr 12 2004 Jan 13 Philips Semiconductors Product specification NPN medium frequency transistor BF840 FEATURES PINNING • Low current max. 25 mA

M54523

Abstract: pnp 8 transistor array 18P4G 20P2N-A M54583 M54583FP M54583P 8 pin 4v power supply ic
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor

M54583FP

Abstract: pnp darlington array M54523 PNP DARLINGTON ARRAYS 18P4G 20P2N-A M54583 M54583P pnp 8 transistor array
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter

QCA300BA60

Abstract: 675g M6 transistor
Contextual Info: TRANSISTOR MODULE（Hi-β） QCA300BA60 UL;E76102 （M） QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is

ce1a3q

Contextual Info: DATA SHEET COMPOUND TRANSISTOR CE1A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1A3Q is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for

2SC2945

Abstract: QK SOT89 2SC2954 mark qk sot
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC2954 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC2954 is an NPN epitaxial silicon transistor disigned for Unit: mm low noise wide band amplifier and buffer amplifier of OSC, for VHF

PBSS4350D

Abstract: PBSS5350D
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D302 PBSS4350D 50 V low VCEsat NPN transistor Product data sheet Supersedes data of 2001 Jan 26 2001 Jul 13 NXP Semiconductors Product data sheet 50 V low VCEsat NPN transistor PBSS4350D FEATURES QUICK REFERENCE DATA

Transistor NEC 30

Contextual Info: DATA SHEET COMPOUND TRANSISTOR CE1N2R on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1N2R is a transistor of on-chip high hFE resistor PACKAGE DRAWING UNIT: mm incorporating dumper diode in collector to emitter and zener diode

Contextual Info: UTC DTC114Y NPN DIGITAL TRANSISTOR NPN DIGITAL TRANSISTOR BUILT-IN RESISTORS FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). * The bias resistors consist of thin-film resistors with

Contextual Info: UTC DTC114E NPN DIGITAL TRANSISTOR NPN DIGITAL TRANSISTOR BUILT-IN RESISTORS FEATURES *Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). *The bias resistors consist of thin-film resistors with

2SK3653B

Abstract: 2SK3653
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3653B N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3653B is suitable for converter of ECM. 0.13 +0.1 –0.05 0.3 ±0.05 0.2 General-purpose product.

2SK3230B

Abstract: SC-89
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3230B N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3230B is suitable for converter of ECM. +0.1 0.3 ±0.05 0.1–0.05 0.4 General-purpose product.

PBSS4240T

Abstract: PBSS5240T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4240T 40 V; 2 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2001 Jul 13 2004 Jan 09 Philips Semiconductors Product specification 40 V; 2 A NPN low VCEsat (BISS) transistor PBSS4240T QUICK REFERENCE DATA

PBSS9110T

Abstract: PBSS8110T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS9110T 100 V, 1 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2004 May 06 2004 May 13 NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor

BLY88A

Abstract: A41E BLY88 W1032 Paver Components
Contextual Info: PHILIPS INTERNATIONAL MAINTENANCE TYPE 41E D • TllGÔSb DQSTRS? 1 « P H IN II BLY88A A T - 3 3 - 0 1 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,5 V. The transistor is resistance stabilized and is

M54514AFP

Abstract: M54514AP 6 "transistor arrays" ic npn tr array
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54514AP/AFP 7-UNIT 50mA TRANSISTOR ARRAY DESCRIPTION M54514AP and M54514AFP are seven-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

NEC 2533

Abstract: transistor c 6093 NEC k 787 2SC4568 2533 nec
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4568 NPN SILICON EPITAXIAL TRANSISTOR UHF TV TUNER OSC/MIXER DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4568 is an NPN silicon epitaxial transistor intended for use as UHF oscillator and UHF mixer in a tuner of TV rceiver.

PBSS4240T

Abstract: PBSS5240T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4240T 40 V; 2 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2001 Jul 13 2004 Jan 09 NXP Semiconductors Product data sheet 40 V; 2 A NPN low VCEsat (BISS) transistor PBSS4240T FEATURES QUICK REFERENCE DATA