OF IC UM 66 Search Results

DAC71

Contextual Info: B U R R -B R O W N e I DAC71-CCD 1 • ±0.005% M AXIM UM N O N LIN EA R ITY • LOW DRIFT, ± 7p p m /°C T YP IC A L T he DAC71 w ith internal reference and optional o u tp u t am plifier offers a m axim um linearity e rro r of ±0.005% of F S R at room tem perature and a m axi­

ic used for amplitude modulation

Contextual Info: CXB1118 AQ/1128 AQ SONY Laser Driver Applications Description Optical communications, measurements, optomagnetic applications The CXB1118AQ/1128AQ is a bipolar IC which can sw itch m axim um pulse m o d u la tio n c u rre n t of 100mA/60mA at a speed of îdmax = 1,4Gbps NRZ . It is

OPB866T55

Abstract: ka 317 npn OPB866T OPB866T51 K-220 transistor k 425 akp transistor
Contextual Info: [SU SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB866T51/OPB866T55 PACKAGE DIMENSIONS DESCRIPTION Th e O P B 866 T series of switches is designed to allow the SEE NOTE 3 user m axim um flexibility in applications. Each switch M"Ts|© k .3 1 3 (7.94) O P T IC A L

ADSP-1012A

Abstract: ADSP-1012 ADSP1012 x628
Contextual Info: ANALO G D EV IC ES 1 2 x 1 2-Bit CMOS Multiplier ADSP-1012A 1.1 Scope. This specification covers the detail requirements for a monolithic CMOS 12 x 12-bit digital multiplier integrated circuit. 1.2 P art N um ber. The complete part num ber per Table 1 of this specification is as follows:

WF1M32-XXX

Contextual Info: a IM ITE /MICROELECTRONICS ™Î!on?6m A B lock Erase o p eratio n erases one of th e 32 blocks, w h ic h is PRINCIPLES OF OPERATION about 65% im provem ent over th e W F1M 32-XXX. The fo llo w in g P rinciples of O peration of th e W F2M 32-XX X Each b lo ck can be w ritte n and erased a m inim um of 100,000

mp2812

Contextual Info: HA13403, HA13403V, HA13403MP Three-Phase Brushless Motor Driver H A 13403 D escription T he H A 13403 is a m onolithic pow er IC developed for use as a three-phase brushless D C m otor driver. W ith a m axim um ou tp u t current o f 1.5 A /phasc and pow er supply voltage of

MC68452

Abstract: MC68450 MC68450R10 MC68450L10 MC68450L8 mc68450rc10 MC68450R8 MC68440 MC68450RC8 mc6845
Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MC68450 A dvance Inform ation D ir e c t M e m o r y A c c e s s C o n t r o lle r D M AC MOTOROLA MOTOROLA l'(C id ADI 1216 TABLE OF CONTENTS P arag ra p h N um ber Page Num ber T itle S e c tio n 1 I n t r o d u c t io n

M37703E4AXXXSP

Abstract: A4G1 27C256K
Contextual Info: M IT S U B IS H I M IC R O C O M P U T E R S M37703E4AXXXSP M37703E4BXXXSP M 3 7 7 0 3 E 4 A X X X S P .IS um*iec* P R 0 M V E R S IO N of M 3 7 7 0 3 M 4 A X X X S P .M 3 7 7 0 3 M 4 B X X X S P DESCRIPTION PIN CONFIGURATION TOP VIEW The M 3 7 7 0 3 E 4 A X X X S P and M 3 7 7 0 3 E 4 B X X X S P are sin g le ­

Contextual Info: MOTOROLA SC {LOGIC! D2 dF | b3b7SS5 □QÖD4DE 3 |~04 0 2 D T-66-21 S 3 MOTOROLA SE M IC O N D U C TO R TECHNICAL DATA MC54/74HC3 5 4 8 -In p u t Data S elector/M ultiplexer w ith Data and Address Latches and 3-S tate Outputs High-Performance Silicon-Gate CM OS

mcm6665

Abstract: MCM6665A MCM6664A-12 MCM6664A MCM6664A-15 M6664 V9LR Limit switch
Contextual Info: M O T O R O L A Advance Information M O S N-CHANNEL, SILICO N-GATE DRAM 64K-BIT DYNAMIC RAM T h e M C M 6 6 6 4 A is a 66 ,5 3 6 b it, hig h-speed , d yn a m ic HandomA c c e s s M em o ry. O rg anized a s 6 6 ,5 3 6 one-bit w o rd s an d fab ricate d u s ­

ferraz protistor 6.621 cp urgb 14 25

Abstract: ferraz L330014 ferraz protistor 621 CP ferraz protistor fuse 600 CP ferraz shawmut fuse ur 14x51 6.621 URGB FERRAZ 6.621CP Ferraz 660-GRB W330000 P209865
Contextual Info: Semiconductor Fuses European Fuses French Ferrule 660 gRB 660 V AC gRB - from 1 up to 30 A Size: 10x38 Ð The fuse preselection table below indicates: - rated current or rating IN - pre-arcing I²t (I²t p) at 1 ms - total operating I²t (I²tt) at 660 V, cos ϕ=0.15, and for a total

ON SEMICONDUCTOR 613

Abstract: top marking 293 1A466
Contextual Info: PRODUCT INFORMATION 1A466 Datacom, General Purpose O p t ic a l a n d E le c t r ic a l C h a r a c t e r is t ic s 500 /p=30mA Note 1 700 |j W 50 deg (3 d B e l) /c 200 MHz Peak Wavelength XP 640 650 660 II o nm II Bandwidth Full W idth H alf M axim um I

ML-6697A

Abstract: Ml-6696a 6697A EC-200 oscillator ML6697A a1309 ml 081 6696A Raytheon Company 6697
Contextual Info: The M a c h le t t L a b o r a t o r ie s , In c . * 1 0 6 3 Hope S tre e t Stamford, Conn. 06907 • Tel. 203-348-7511 • TWX 203-327-2496 DESCRIPTION The M L-6696A and M L-6697A are general-purpose triodes suitable for industrial heating and A M broadcasting.

400J

Contextual Info: 3J/I92E Air-Blast-Cooled R.F. Triode 3J/I92E CATHODE. Thoriated tungsten filament Voltage Nom inal current Peak emission 5 66 12 V A A 17 1,500 Cl R A T IN G . Amplification factor J Measured at 'j Impedance \ Va 6kV, I a 0.9A J D IR E C T IN T E R - E L E C T R O D E C A P A C IT IE S .

93c46 st

Abstract: ST 93c86 93C56 14 pin 93c56 93C86 93C46 93C46 dip 93C46 tssop 93C56 14 pins 93C66
Contextual Info: £ £ O K T A L E S T CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit Serial E2PROM FEATURES • High Speed Operation: ■ Power-Up Inadvertant Write Protection - 93C46/56/57/66: 1MHz - 93C86: 3MHz ■ 1,000,000 Program/Erase Cycles ■ 100 Year Data Retention ■ Low Power CMOS Technology

machlett ML-6696

Abstract: 6697 ML-6697 machlett thyratron A-13094 machlett 4000G Raytheon Company thyratron tube operation industrial tube company
Contextual Info: The M a c h le t t L a b o r a to r ie s , In c . • 1 0 6 3 Hope S tre e t ISSU ED 9-67 Stamford, Conn. 06907 • Tel. 203-348-7511 • TWX 203-327-2496 s Î? m a □ o a o, G e n e ra l P u rp ose Triodes 80 kW C W DESCRIPTION The M L-6696 and M L-6697 are general-purpose triodes

512K32

Contextual Info: WF512K32-XXX5 •Il Hi-R£LiASIÜTY PRODUCT 512Kx32 5V FLASH MODULE, SMD 5962-94612 FEATURES ■ Access Tim es o f 60, 7 0 ,9 0 ,1 2 0 ,150ns ■ O rganized as 512Kx32 ■ Packaging ■ Com m ercial, Industrial and M ilita ry Tem perature Ranges • 66 pin, PGA Type, 1.075” square, H erm etic

ML-7211

Abstract: ML-7698 ic la 7698 la 7698 ml 33.76 7211 ic 7698 Raytheon Company 7698 ML-7698R
Contextual Info: The M o c h l e t t L a b o r a t o r i e s , In c . • 1 0 6 3 Hope S tr e e t ISSUED 7-66 Stamford, Conn. 06907 • Tel. 203-348-7511 • TWX 203-327-2496 UHF P la n a r Triodes C W , Plate or Grid Pulsed Phormat Cathode High Cathode-Current Capability

Contextual Info: 10 CKT A 87641-1001 8764 I-000 I 80 66.50 5 0 .165 66.40 64.50 63.30 6 2 .15 87641-1002 8764I-0002 40 4 I.I0 24.765 4 1.00 36.75 TIN TIN/LEAD PART NUMBER PIN *80 PART NUMBER B G C D E F 39. IO 37.90 H I J K L R I.00 <4X 58.42 57.87 55.27 54.70 5I.I7 49.53

Contextual Info: LF9502 2K Programmable Line Buffer DEV IC ES IN C O R PO R A TE D FEATURES □ 66 M H z M axim um O perating Frequency □ Program m able Buffer Length from 2 to 2049 Clock Cycles □ 10-bit D ata Inputs an d O utputs □ Data Delay an d D ata Recirculation

93C46SI

Abstract: 93C46 ST 93c86 93C46 dip 93C66 93C46 93C56 14 pin 93C86 93c46 st 93C56 catalyst 93C66
Contextual Info: CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit Serial E2PROM FEATURES • High Speed Operation: ■ Power-Up Inadvertant Write Protection - 93C46/56/57/66: 1MHz - 93C86: 3MHz ■ 1,000,000 Program/Erase Cycles ■ 100 Year Data Retention ■ Low Power CMOS Technology

93c tssop

Abstract: 93C86
Contextual Info: CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit Serial E2PROM FEATURES • High Speed Operation: Power-Up Inadvertant Write Protection - 93C46/56/57/66: 1MHz - 93C86: 3MHz 1,000,000 Program/Erase Cycles 100 Year Data Retention ■ Low Power CMOS Technology ■ 1.8 to 6.0 Volt Operation

16652

Contextual Info: Revised January 1999 EMICQNDUCTGR tm General Description Features T h e A B T 1 6652 consists of sixteen bus transceiver circuits w ith D-type flip-flops, and control circuitry arranged for mul­ tiplexed transm ission of data dire ctly from th e input bus or

088SA

Abstract: high speed OPTOCOUPLERS CPL-2531
Contextual Info: ni C R O P A C INDUSTRIES INC 45E D B b l l 2 b 4 0 OQaGat,S 2 • HPI 66088 SINGLE/DUAL CHAN N EL HIGH SPEED OPTO COUPLERS FEATURES • APPLICATIONS H e rm e tic a lly s e a le d E le c tric a lly s im ila r to 4N 55 • M ic r o p r o c e s s o r s y s te m in te r fa c e