O SOT89 Search Results

Contextual Info: Direction Of Feed O 0|0j0|0|0|0|0 Polarized Components □DODDODD Direction Of Feed o o o • o o o mm Bm mSmm m Tjgjl □ □ □ H SOT143 SOT25 1, . igg igj vg g g \ $ S J O O O O Q~Ol \o O O o1 SOT23 Crystal )Q Cathode O /o"5 Melf &SOD80 o ooooo G O O

Contextual Info: SOT89 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP4424Z ISSUE 1 - NOVEMBER 1998 FEATURES * 240 V o lt V DS R D S on = 8 8 n t y P ' 0 3 ' a t V G S = - 3 -5 V * L o w th re s h o ld and Fast s w itc h in g APPLICATIO NS * E le ctro n ic h o o k s w itch e s

Contextual Info: Direction Of Feed BHBfc TftMfiif SOT89 SOT143 SOT223 Cathode B1BBBI M e lf &SOD80 Resistor Network Gull Wing Aluminum Cap. Potentiom eter Cathode Positive Carrier Tape Dimensions Cover Tape o lA o i o Tantalum Cap. FM 1 R ectifier Tape Width —Ko Crystal

2SK944

Abstract: SC-65
Contextual Info: TOSHIBA 2SK944 TDT7SSD 0D232A4 MT2 T O S H IB A FIELD EFFECT T R A N S IS T O R SILIC O N N C H A N N E L M O S T Y P E tt- M O S II 2SK944 INDUSTRIAL APPLICATIONS U nit in mm H IG H S PEED , HIGH C U R R E N T S W IT C H IN G A P P L IC A T IO N S . C H O P P E R R E G U L A T O R , DC-DC C O N V E R T E R A N D M O T O R D R IV E

Contextual Info: TOSHIBA 10^7250 0G23314 T O SH IB A FIELD EFFECT T RA N SIST O R 2SK1542 TbT SILICO N N C H A N N E L M O S TYPE L2-;r-M O SIV 2 S K 1 542 INDUSTRIAL APPLICATIONS H IGH SPEED SW IT C H IN G APPLICATION S. RELA Y DRIVE, M O T O R D RIV E A N D D C -D C C O N V ER TER APPLICATION S.

Contextual Info: SOT89 NPN SILICON PLANAR M EDIU M POWER TRANSISTOR IS S U E 3 - O C T O B E R 1995 FCX491 O _ FEATURES * 60 Volt V CE0 * 1 A m p continuous current * Ptot= 1 Watt CO M PLEM ENTARY T Y P E P A R T M A R K IN G D E T A IL - FCX591 N1 ABSOLUTE M A X IM U M RATINGS.

Contextual Info: U N Doc i : 341643 MC33164-3/MC34164 3 M h e I I ' In ( I n f i n i t e P ' I o w e r C I IV ( } \ I o f I C S 3V P n n o v a t i o n U ndervoltage S ensing r o d u c t i o n D DESCRIPTION The MC33164-3 and MC34164-3 are undervoltage sensing circuits designed

Contextual Info: SOT89 NPN SILICON PLANAR M EDIUM POWER TRANSISTOR FCX491A ISSUE 3 - OCTOBER 1995 FEATU RES * 1 A m p c o n tin u o u s current C O M P L E M E N T A R Y TYPE- FCX591A P A R T M A R K IN G D E T A IL S - N2 #• B ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L

2SK2146

Abstract: H1 SOT-89
Contextual Info: TOSHIBA • ^ 7 2 5 0 0Q2337D f l ^ T O S H IB A FIELD EFFECT T R A N S IS T O R 2SK2146 SILIC O N N C H A N N E L M O S T Y P E 2 S K 2 1 46 H IG H S PEED , HIGH C U R R E N T S W IT C H IN G A P P L IC A T IO N S C H O P P E R R E G U L A T O R , DC-DC C O N V E R T E R A N D M O T O R D R IV E

Si3201

Abstract: Si321x AN47 ac proslic max 32Q1 0X0012 I321
Contextual Info: AN47 S i321 X L I N E F E E D P O W E R M O N I T O R I N G A N D P R O T E C T I O N Introduction The Silicon Laboratories’ ProSLIC products are designed to continuously monitor the power dissipated in each of the six external bipolar transistors in the

TO-243AB

Abstract: Schottky Diode SOT-89 E10QS06 E10QS05
Contextual Info: SCHOTTKY BARRIER DIODE E10QS05 E10QS06 1.1A/50— 60V FEA TUR ES ° S i m i l a r to T O - 2 4 3 A B SOT-89 Cas e ° Surface Mount Device “ L o w F o r w a r d V o l t a g e Dro p ° L o w P o w e r Loss, High Efficiency « H i g h Su r g e C a p a b i l i t y

2sj239

Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
Contextual Info: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]

T2907A

Abstract: cd 100 transistor
Contextual Info: Central C X T2907A TM Sem i c o n d u c t o r C o r p . PNP SILICON TRANSISTOR DESCRIPTION: The C ENTRAL S EM IC O N D U C TO R CXT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX596 ISSUE 3 - NOVEMBER 1995_ O PA R TM A R KIN G D E T A IL - P96 ABSOLUTE MAXIMUM RATINGS. PA R A M ETER SY M B O L Collector-Base Voltage VALUE UNIT V V V CBO -220 Collector-Em itter Voltage V CEO

thyristors 5000 volt 3000 amperes

Contextual Info: POQJEREX INC m 1 m B OS X '"T-'ZS’rZl DE | THTMbSl 0DD310b fl | X FT1S O O B V Powerex, Inc. Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Ave. Q. Durand, BP107, 72003 LeMana, France (43) 72.7S.1S P tlQ S B C O f l t t O l S C R

MY sot-89

Abstract: LX7001 LX7001CDM LX7001CLP LX7001CPK LX7001IDM LX7001ILP LX7001IPK MC34064
Contextual Info: he I nf in it e P ower I n n o v a t i o n of P R O D U C T I O N DATA DESCRIPTION The LX7001 is an im proved undervoltage sensing circuit specifi­ cally designed for use as a reset controller in m icroprocessor-based systems. Today's com plex m iniaturized

"coil capacitance"

Contextual Info: HV9921/HV9922/HV9923 Initial Release 3-Pin Switch-Mode LED Lamp Driver ICs Features Constant Output Current: o HV9921 – 20mA o HV9922 – 50mA o HV9923 – 30mA Universal 85-264VAC Operation Fixed OFF-Time Buck Converter Internal 500V Power MOSFET Applications

Contextual Info: Si3232 D UAL P R O G R A M M A B L E C M O S S L I C WITH L I N E M O N I T O R I N G Features  Ideal for customer premise applications  Low standby power consumption: <65 mW per channel   Internal balanced ringing to 65 Vrms   Software programmable parameters:

CXT3904

Abstract: CXT3906
Contextual Info: TM C CXT3904 NPN CXT3906 PNP e n t r a l S em i c o n d u c t o r C o r p . COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION The C E NTRAL S E M IC O N D U C TO R CXT3904, CXT3906 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a

PNP marking NY sot-223

Abstract: 13004-v LDO marking code AL transistor 9005
Contextual Info: $ TAIW AN TS9005 S E M IC O N D U C T O R 600mA Low Noise CMOS LDO b RoHS C O M P L IA N C E SO T-89 SO T-223 2 Pin D s fin itio n : Pin D efinition: 1. Input 1. G round 2. Input 3. Output 2. G round 3. O utpu t 1 2 3 1 2 3 General Description The T S 9005 series is a positive voltage regulator developed utilizing C M O S technology featured low quiescent

Contextual Info: TO SH IBA cìGcì755G 005333^ 33T T O S H IB A FIELD EFFECT T R A N S IS T O R 2 S K SILIC O N N C H A N N E L M O S T Y P E tt- M O S II -5 1 6 9 2 INDUSTRIAL APPLICATIONS U nit in mm H IG H S P E E D , H IGH C U R R E N T S W IT C H IN G A P P LIC A T IO N S .

s t u 309d

Abstract: AMI Semiconductor socket 771 C451 4308B TLC 771
Contextual Info: SÖE D T EL ED Y N E COMPONENTS m Ö T 1 7 tü £ ÜQGb 3 Q I b CDG308, CDG309 CDG4308, CDG4309 SE M IC O N D U C T O R QUAD MONOLITHIC SPST CMOS/D-MOS ANALOG SWITCHES ORDERING INFORMATION s o -« S u ite * Mount Pacfcìa* O rw * b tlc tt mrtrc , Gomm ^W Tefnp.FÄng«

KTA1664

Abstract: sot-89 23 transistor marking
Contextual Info: SEMICONDUCTOR KTA1664 MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking No. Item Marking Description Device Mark R KTA1664 * Grade O O, Y Lot No. 816 816 1 R O 2. Marking 2 8 Year 0~9 : 2000~2009 16 Week 16 : 16th Week Note *Grade : Transistor only.

DL340

Abstract: THYRISTOR ts 602 cr02a BP107 CDL30140 CDL30240 CDL30440 CDL30640 CDL30840 CDL31040
Contextual Info: POlilEREX INC is E i> • ? 5 cm b s i m m te x o o o 3 tm & CDL3 Powerex, Inc., Hlllis Street, Youngwaod, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 72.75.15 m T - 4 - I - & 5 40 Tentative