O SOT89 Search Results

Contextual Info: Direction Of Feed O 0|0j0|0|0|0|0 Polarized Components □DODDODD Direction Of Feed o o o • o o o mm Bm mSmm m Tjgjl □ □ □ H SOT143 SOT25 1, . igg igj vg g g \ $ S J O O O O Q~Ol \o O O o1 SOT23 Crystal )Q Cathode O /o"5 Melf &SOD80 o ooooo G O O

Contextual Info: IXD4901 200 mA Negative Voltage Regulator with Soft Start FEATURES o o o o o o o o o o o o o o o o o DESCRIPTION Output Current up to 200 mA 350 mA max Input Voltage Range -2.4 V - -12.4 V (VCE = 3.6 V) Output Voltage Range from -0.9 V to -12 V Dropout Voltage 400 mV @ 100 mA,

Contextual Info: IXD1701 28 V Input High Speed Voltage Regulator FEATURES o o o o o o o o o o o o o o o DESCRIPTION Operating Voltage Range 2.0 V – 28.0 V Output Voltage Range from 1.8 V to 18.0 V with 0.1 V increments Output Voltage Accuracy ± 2% Temperature Stability ± 30 ppm/ C

Contextual Info: IXD4902 Three-Terminal Negative Voltage Regulator FEATURES o o o o o o o o o o o o o o o DESCRIPTION Output Current up to 200 mA 350 mA max Input Voltage Range -2.4 V - -16 V Output Voltage Range from -2.5 V to -12 V (fixed values) Dropout Voltage 400 mV @ 100 mA,

Contextual Info: IXD4902 Three-Terminal Negative Voltage Regulator FEATURES o o o o o o o o o o o o o o o DESCRIPTION Output Current up to 200 mA 350 mA max Input Voltage Range -2.4 V - -16 V Output Voltage Range from -2.5 V to -12 V (fixed values) Dropout Voltage 400 mV @ 100 mA,

FMMT495

Contextual Info: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR IS S U E 3 O C T O B E R 1995 FCX495 O FEATURES * 150 V o lt V CE0 * 1 A m p c o n tin u o u s c u rre n t P A R T M A R K IN G D E T A I L - iÉ n N 95 B c ABSOLUTE MAXIMUM RATINGS. PA R A M ET E R Collector-Base Voltage

Contextual Info: SOT89 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP4424Z ISSUE 1 - NOVEMBER 1998 FEATURES * 240 V o lt V DS R D S on = 8 8 n t y P ' 0 3 ' a t V G S = - 3 -5 V * L o w th re s h o ld and Fast s w itc h in g APPLICATIO NS * E le ctro n ic h o o k s w itch e s

Contextual Info: Direction Of Feed BHBfc TftMfiif SOT89 SOT143 SOT223 Cathode B1BBBI M e lf &SOD80 Resistor Network Gull Wing Aluminum Cap. Potentiom eter Cathode Positive Carrier Tape Dimensions Cover Tape o lA o i o Tantalum Cap. FM 1 R ectifier Tape Width —Ko Crystal

Contextual Info: IXD1201 Positive Voltage Regulator FEATURES o o o o Dropout Voltage 0.16 V @ 100 mA , 0.40 V @ 200 mA Maximum Operating Voltage 10 V o o o Low Power Consumption at 2.0 A typical Operating Ambient Temperature - 40/+ 850C℃ Packages : SOT-25, SOT-89 ,TO-92, and USP-6B

SE014

Abstract: T08I Schottky Diode SC-62 diode se014
Contextual Info: SE01 4 ia C O L L flE R S E M IC O N D U C T O R IN C 4 flE » 2 2 3 0 7 *1 5 □ 0 0 1 7 3 cî 27S • COL ■ O u tlin e Drawings SCHOTTKY BARRIER DIODE ■ Features • Surface m ount device • Low V F JEDEC - EIAJ S C -62 (SOT89) 0 Super high speed sw itching.

Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - JANUARY 1996 BFN19 O C O M P L E M E N T A R Y T Y P E - B FN 18 P A R T M A R K IN G D E T A IL - D H ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYMBOL V A LU E U N IT C o lle c to r - B a s e V o lt a g e

Contextual Info: SOT89 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4424Z ISSUE 1 - NOVEMBER 1998_ FEATURES * 240 V o lt BV ds * E x tre m e ly lo w RDS on =^-3£2 * L o w th re s h o ld and Fast s w itc h in g APPLICATIO NS * Earth recall and d ia llin g sw itch e s

2SK1929

Contextual Info: T O SH IB A ‘ÌD 'ÌT S S G T O S H IB A FIELD EFFECT T R A N S IS T O R GD233S3 2SK1929 7DT SILIC O N N C H A N N E L M O S T Y P E tt- M O S II .5 2 S K 1 929 HIGH S PEED , H IG H C U R R EN T S W IT C H IN G A P P L IC A T IO N S . C H O P P E R R E G U L A T O R , DC-DC C O N V E R T E R A N D M O T O R D R IV E

2SK944

Abstract: SC-65
Contextual Info: TOSHIBA 2SK944 TDT7SSD 0D232A4 MT2 T O S H IB A FIELD EFFECT T R A N S IS T O R SILIC O N N C H A N N E L M O S T Y P E tt- M O S II 2SK944 INDUSTRIAL APPLICATIONS U nit in mm H IG H S PEED , HIGH C U R R E N T S W IT C H IN G A P P L IC A T IO N S . C H O P P E R R E G U L A T O R , DC-DC C O N V E R T E R A N D M O T O R D R IV E

Contextual Info: SOT89 NPN SILICON PLANAR M EDIU M POWER TRANSISTOR IS S U E 3 - O C T O B E R 1995 FCX491 O _ FEATURES * 60 Volt V CE0 * 1 A m p continuous current * Ptot= 1 Watt CO M PLEM ENTARY T Y P E P A R T M A R K IN G D E T A IL - FCX591 N1 ABSOLUTE M A X IM U M RATINGS.

Contextual Info: Central C XT2222A S e m i c o n d u c t o r C o r p TM . NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CXT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

Contextual Info: U N Doc i : 341643 MC33164-3/MC34164 3 M h e I I ' In ( I n f i n i t e P ' I o w e r C I IV ( } \ I o f I C S 3V P n n o v a t i o n U ndervoltage S ensing r o d u c t i o n D DESCRIPTION The MC33164-3 and MC34164-3 are undervoltage sensing circuits designed

Contextual Info: SOT89 NPN SILICON PLANAR M EDIUM POWER TRANSISTOR FCX491A ISSUE 3 - OCTOBER 1995 FEATU RES * 1 A m p c o n tin u o u s current C O M P L E M E N T A R Y TYPE- FCX591A P A R T M A R K IN G D E T A IL S - N2 #• B ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L

POWER WITH 34064

Abstract: 34064 mc34064 application note high voltage C3306 c34064 MC33064DM MC33064LP MC33064PK MC34064 MC34064DM
Contextual Info: U N D o c # : 34064 M C 3 3 0 6 4 /M C 3 4 0 6 4 M i ' l\ < > I I I { h e I P n f i n i t e o w e r U ndervoitage I n n o v a t i o n o f P S ensing D r o d u c t i o n D ESC RIPTIO N T h e M C34064 is an undervoitage sen sin g circuit d esign ed sp ecifically for

2SK2146

Abstract: H1 SOT-89
Contextual Info: TOSHIBA • ^ 7 2 5 0 0Q2337D f l ^ T O S H IB A FIELD EFFECT T R A N S IS T O R 2SK2146 SILIC O N N C H A N N E L M O S T Y P E 2 S K 2 1 46 H IG H S PEED , HIGH C U R R E N T S W IT C H IN G A P P L IC A T IO N S C H O P P E R R E G U L A T O R , DC-DC C O N V E R T E R A N D M O T O R D R IV E

SP 8438

Abstract: SP+8438
Contextual Info: S -8 4 3 7 /8 4 3 8 Series F?B3U LATO RSSW ITCHI T h e S -8 4 3 7 /8 4 3 8 S e rie s is a C M O S in ve rtin g s w itc h in g re g u la to r that c o n s is ts o f a re fe re n c e v o lta g e s o u rc e , a C R o s c illa tio n c irc u it, a p o w e r M O S FE T and an e rro r a m p lifie r.

AN105 infineon

Abstract: BCR450 BCR450U BCR401U LXML-PWC1-0040 BCR402u boost bcr401 BCR402R hg lamp ballast LED lights manufacturing technology
Contextual Info: A pp li c at io n N o t e, R e v . 1. 0 , N ov e m be r 2 00 8 A p p li c a t i o n N o t e N o . 1 5 9 L o w - C o s t, L i n e a r M o de , 7 1 % E f f i c i e n c y 38 0 m A L E D D r i v e r D em o u s i n g t h e B C R 4 0 1 R , B C X 6 8 & LUXEON Rebel LEDs

Contextual Info: Section S: Bipolar Transistors _ Low S a tu ra tia n T ra n s is to rs up to I 0 0 V o lts SOT89 L o w Saturation PNP Transistors up to 100V P inout Details: 1-Base, 2+4-Collector, 3-Em

LF-DIODE

Abstract: MC34064 SOLAR CHARGER MC34164-3PK MC331 MC33164-3 MC33164-3LP MC341 MC34164 MC34164-3
Contextual Info: LIN Doc #; 341643 M C 3 3 1 6 4 -3 /M C 3 4 1 6 4 3 M I C' In I T h e I n f i n i t e P ' I (/ r IN ( } NI I c s o w e r I o f 3 V n n o v a t i o n U P n d e r v o l t a g i D r o d u c t i o n D ESCRIPTIO N The MC33164-3 and MC34164-3 are undervoltage sensing circuits designed