NY TRANSISTOR MAKING Search Results

NY TRANSISTOR MAKING Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

NY TRANSISTOR MAKING Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
EN4094 Contextual Info: SA NY O S E M I C O N D U C T O R CORP Ordering number: EN4094 b3E D • 7n7D7b D Q l E M ô b 04Ô * T S A J I Monolithic Digital 1C SÄWO LB1741 No. 4094 Octal NPN Darlington-pair Transistor Array PINOUT OVERVIEW The LB1741 is a high-current Darlington-pair transistor	OCR Scan	EN4094 LB1741 LB1741 18-pin EN4094	PDF
2sd1805a Abstract: 2SD1805 Contextual Info: SA NY O S E M I C O N D U C T O R CORP 7 T T 7 0 7 ta G 0 0 7 5 4 ci T 2SE D T-33-0 2SD1805 7 # * NPN Epitaxial Planar Silicon Transistor 2044 High-Current Switching Applications ansa Applications . Strobes, voltage regulators, relay drivers, lamp drivers	OCR Scan	7T707tu 2SD1805 T-33-07 2SD1805-applied 2sd1805a	PDF
P41 transistor Abstract: high gain PNP POWER TRANSISTOR SOT23 NY TRANSISTOR MAKING transistor marking 44 sot23 making 2a sot23 ZXTP2041F ZXTP2041FTA ZXTP2041FTC Contextual Info: ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTP2041F Description This transistor combines high gain, high current operation and low saturation voltage making it	Original	ZXTP2041F -500mV ZXTP2041FTA ZXTP2041FTC P41 transistor high gain PNP POWER TRANSISTOR SOT23 NY TRANSISTOR MAKING transistor marking 44 sot23 making 2a sot23 ZXTP2041F ZXTP2041FTA ZXTP2041FTC	PDF
marking 8A sot223 Abstract: sot223 transistor pinout transistor pnp 12V 1A Continuous Current Peak FZT717 FZT717TA 12v pnp transistor zetex 320 Contextual Info: FZT717 SOT223 PNP medium power transistor Summary BVCEO = -12V; IC = 3A Description Packaged in the SOT223 outline this low saturation 12V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.	Original	FZT717 OT223 FZT717TA marking 8A sot223 sot223 transistor pinout transistor pnp 12V 1A Continuous Current Peak FZT717 FZT717TA 12v pnp transistor zetex 320	PDF
transistor marking 44 sot23 Abstract: P41 transistor high gain PNP POWER TRANSISTOR SOT23 Zetex ZXTP2041F ZXTP2041FTA ZXTP2041FTC Contextual Info: ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTP2041F Description This transistor combines high gain, high current operation and low saturation voltage making it	Original	ZXTP2041F -500mV ZXTP2041FTA ZXTP2041FTC transistor marking 44 sot23 P41 transistor high gain PNP POWER TRANSISTOR SOT23 Zetex ZXTP2041F ZXTP2041FTA ZXTP2041FTC	PDF
ZXTP2041 Abstract: ic 4446 P41 sot23 NPN Contextual Info: ZXTP2041F SOT23 40 volt NPN silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTP2041F Description This transistor combines high gain, high current operation and low saturation voltage making it	Original	ZXTP2041F -500mV ZXTP2041F ZXTP2041FTA ZXTP2041FTC ZXTP2041 ic 4446 P41 sot23 NPN	PDF
Contextual Info: High Power Transient Voltage Suppressor Modules Transient energy pulses are notorious among designers of all kinds of electronic hardware for their ability to cause failures in circuits of apparently conservative design. Logic circuits, for example, are subject to “glitches” and timing problems if even small transient voltages appear on	Original		PDF
X5T851 Abstract: ZX5T851A ZX5T851ASTOA ZX5T851ASTZ Contextual Info: ZX5T851A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC	Original	ZX5T851A ZX5T851ASTOA ZX5T851ASTZ X5T851 ZX5T851A ZX5T851ASTOA ZX5T851ASTZ	PDF
Contextual Info: ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits	Original	ZXTN2010A ZXTN2010ASTOA ZXTN2010AST)	PDF
ZX5T853Z Abstract: ZX5T853ZTA Contextual Info: ZX5T853Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in	Original	ZX5T853Z ZX5T853ZTA ZX5T853Z ZX5T853ZTA	PDF
ZXTN Abstract: ZXTN2011GTC sot223 device Marking ZXTN2011G ZXTN2011GTA Bv 42 transistor Contextual Info: ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits	Original	ZXTN2011G OT223 OT223 ZXTN2011GTA ZXTN2011GTC ZXTN ZXTN2011GTC sot223 device Marking ZXTN2011G ZXTN2011GTA Bv 42 transistor	PDF
ZXTP2012A Abstract: ZXTP2012ASTOA ZXTP2012ASTZ Contextual Info: ZXTP2012A 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = -60V : RSAT = 38m ; IC = -3.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits	Original	ZXTP2012A ZXTP2012ASTOA ZXTP2012ASTZ ZXTP2012A ZXTP2012ASTOA ZXTP2012ASTZ	PDF
ZXTN2010A Abstract: ZXTN2010ASTOA ZXTN2010ASTZ Contextual Info: ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits	Original	ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ	PDF
IC2A Abstract: marking N20 ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ Contextual Info: ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits	Original	ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ IC2A marking N20 ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ	PDF

X5T951 Contextual Info: ZX5T951A 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = -60V : RSAT = 38m ; IC = -3.5A DESCRIPTION Packaged in the E-line outline this new 5th generation low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC	Original	ZX5T951A ZX5T951ASTOA ZX5T951ASTZ X5T951	PDF
PNP POWER TRANSISTOR SOT23 Abstract: FT-110 sot23 6 device Marking SOT23-6 ZXTP2006E6 ZXTP2006E6TA ZXTP2006E6TC 52 sot23-6 PNP SOT23-6 .FT SOT23-6 Contextual Info: ZXTP2006E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BVCEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Packaged in the SOT23-6 outline this new low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits	Original	ZXTP2006E6 OT23-6 OT23-6 -70mV A/100mA ZXTP2006E6TA PNP POWER TRANSISTOR SOT23 FT-110 sot23 6 device Marking SOT23-6 ZXTP2006E6 ZXTP2006E6TA ZXTP2006E6TC 52 sot23-6 PNP SOT23-6 .FT SOT23-6	PDF
zxtP Abstract: ZXTP2014G ZXTP2014GTA ZXTP2014GTC Contextual Info: ZXTP2014G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new low saturation 140V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits	Original	ZXTP2014G OT223 -140V OT223 ZXTP2014GTA ZXTP2014GTC zxtP ZXTP2014G ZXTP2014GTA ZXTP2014GTC	PDF
Bv 42 transistor Abstract: zxtP sot223 device Marking ZXTP2013G ZXTP2013GTA ZXTP2013GTC Contextual Info: ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits	Original	ZXTP2013G OT223 -100V OT223 ZXTP2013GTA ZXTP2013GTC DEV26100 Bv 42 transistor zxtP sot223 device Marking ZXTP2013G ZXTP2013GTA ZXTP2013GTC	PDF
ZXTP2014Z Abstract: ZXTP2014ZTA Contextual Info: ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line	Original	ZXTP2014Z -140V ZXTP2014ZTA ZXTP2014Z ZXTP2014ZTA	PDF
ZXTN2011G Abstract: ZXTN2011GTA ZXTN2011GTC Contextual Info: ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits	Original	ZXTN2011G OT223 OT223 ZXTN2011GTA ZXTN2011GTC ZXTN2011G ZXTN2011GTA ZXTN2011GTC	PDF
ZX5T853G Abstract: ZX5T853GTA ZX5T853GTC Contextual Info: ZX5T853G 100V NPN LOW SAT MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC	Original	ZX5T853G OT223 OT223 ZX5T853GTA ZX5T853GTC ZX5T853G ZX5T853GTA ZX5T853GTC	PDF
Contextual Info: ZXTN2011Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits	Original	ZXTN2011Z ZXTN2011ZTA ZXTN20miconductors	PDF
Bv 42 transistor Contextual Info: ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line	Original	ZXTP2014Z -140V ZXTP2014ZTA Bv 42 transistor	PDF
ZX5T953GTA Abstract: ZX5T953G ZX5T953GTC x5t953 Contextual Info: ZX5T953G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC	Original	ZX5T953G OT223 -100V OT223 ZX5T953GTA ZX5T953GTC ZX5T953GTA ZX5T953G ZX5T953GTC x5t953	PDF

NY TRANSISTOR MAKING Search Results

NY TRANSISTOR MAKING Result Highlights (5)

NY TRANSISTOR MAKING Datasheets Context Search

EN4094

2sd1805a

P41 transistor

marking 8A sot223

transistor marking 44 sot23

ZXTP2041

X5T851

ZX5T853Z

ZXTN

ZXTP2012A

ZXTN2010A

IC2A

X5T951

PNP POWER TRANSISTOR SOT23

zxtP

Bv 42 transistor

ZXTP2014Z

ZXTN2011G

ZX5T853G

Bv 42 transistor

ZX5T953GTA