NXP STANDARD MARKING 3W Search Results

BC817

Contextual Info: '  BC817-25QA; BC817-40QA ' 1  45 V, 500 mA NPN general-purpose transistors Rev. 1 — 3 September 2013 Product data sheet 1. Product profile 1.1 General description 500 mA NPN general-purpose transistors in a leadless ultra small DFN1010D-3 SOT1215) Surface-Mounted Device (SMD) plastic package with visible

bc807

Contextual Info: '  BC807-25QA; BC807-40QA ' 1  45 V, 500 mA PNP general-purpose transistors Rev. 1 — 30 August 2013 Product data sheet 1. Product profile 1.1 General description 500 mA PNP general-purpose transistors in a leadless ultra small DFN1010D-3 SOT1215) Surface-Mounted Device (SMD) plastic package with visible

Contextual Info: DP AK BT151S-650S SCR 20 June 2014 Product data sheet 1. General description Passivated sensitive gate Silicon Controlled Rectifier SCR in a SOT428 (DPAK) surface mountable plastic package intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. These devices are

Contextual Info: SO T8 9 BGA3012 1 GHz 12 dB gain wideband amplifier MMIC Rev. 3 — 26 September 2013 Product data sheet 1. Product profile 1.1 General description The BGA3012 MMIC is a wideband amplifier with internal biasing. It is designed specifically for high linearity CATV line extenders and drop amplifiers over a frequency

YAGEO RC0402FR

Contextual Info: SO T8 9 BGA3012 1 GHz 12 dB gain wideband amplifier MMIC Rev. 1 — 19 March 2013 Preliminary data sheet 1. Product profile 1.1 General description The BGA3012 MMIC is a wideband amplifier with internal biasing. It is designed specifically for high linearity CATV line extenders and drop amplifiers over a frequency

YAGEO RC0402FR

Abstract: BGA3018 470 R2
Contextual Info: SO T8 9 BGA3018 1 GHz 18 dB gain wideband amplifier MMIC Rev. 2 — 15 April 2013 Product data sheet 1. Product profile 1.1 General description The BGA3018 MMIC is a wideband amplifier with internal biasing. It is designed specifically for high linearity CATV line extenders and drop amplifiers over a frequency

Contextual Info: SO T8 9 BGA3018 1 GHz 18 dB gain wideband amplifier MMIC Rev. 3 — 26 September 2013 Product data sheet 1. Product profile 1.1 General description The BGA3018 MMIC is a wideband amplifier with internal biasing. It is designed specifically for high linearity CATV line extenders and drop amplifiers over a frequency

SLSL

Contextual Info: SO T8 9 BGA3015 1 GHz 15 dB gain wideband amplifier MMIC Rev. 2 — 15 April 2013 Product data sheet 1. Product profile 1.1 General description The BGA3015 MMIC is a wideband amplifier with internal biasing. It is designed specifically for high linearity CATV line extenders and drop amplifiers over a frequency

BLM18HD182SN1D

Abstract: RC0402FR-07300RL YAGEO RC0402FR NXP MARKING 11* 3PIN marking code 6w LQG15HS3N9S02D
Contextual Info: SO T8 9 BGA3012 1 GHz 12 dB gain wideband amplifier MMIC Rev. 2 — 15 April 2013 Product data sheet 1. Product profile 1.1 General description The BGA3012 MMIC is a wideband amplifier with internal biasing. It is designed specifically for high linearity CATV line extenders and drop amplifiers over a frequency

YAGEO RC0402FR

Abstract: antenna Yageo
Contextual Info: SO T8 9 BGA3018 1 GHz 18 dB gain wideband amplifier MMIC Rev. 1 — 19 March 2013 Preliminary data sheet 1. Product profile 1.1 General description The BGA3018 MMIC is a wideband amplifier with internal biasing. It is designed specifically for high linearity CATV line extenders and drop amplifiers over a frequency

Contextual Info: SO T8 9 BGA3015 1 GHz 15 dB gain wideband amplifier MMIC Rev. 1 — 19 March 2013 Preliminary data sheet 1. Product profile 1.1 General description The BGA3015 MMIC is a wideband amplifier with internal biasing. It is designed specifically for high linearity CATV line extenders and drop amplifiers over a frequency

Contextual Info: SO T8 9 BGA3015 1 GHz 15 dB gain wideband amplifier MMIC Rev. 3 — 25 September 2013 Product data sheet 1. Product profile 1.1 General description The BGA3015 MMIC is a wideband amplifier with internal biasing. It is designed specifically for high linearity CATV line extenders and drop amplifiers over a frequency

marking 3U 3T 3C diode

Abstract: marking 3U 3T 3C diode 3E 3G smd marking code 3Z smd diode marking codes 3t zener diode SMD marking code 27 4B marking 3U 3T diode smd zener diode code 4d NXP SMD ZENER DIODE MARKING CODE nxp Standard Marking 3w zener diode smd marking 4d
Contextual Info: SO D3 23F TDZxJ series Single Zener diodes Rev. 2 — 29 July 2011 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOD323F SC-90 very small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits

Contextual Info: BFU520Y Dual NPN wideband silicon RF transistor Rev. 1 — 20 February 2014 Product data sheet 1. Product profile 1.1 General description Dual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin SOT363 package. The BFU520Y is part of the BFU5 family of transistors, suitable for small signal to medium

Contextual Info: 62 7  BFU590G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium

Contextual Info: 62 7  BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium

Contextual Info: 62 7  BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium

Contextual Info: BFU690F NPN wideband silicon RF transistor Rev. 2 — 14 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. 1.2 Features and benefits

Contextual Info: PMBFJ620 Dual N-channel field-effect transistor Rev. 3 — 6 March 2014 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Observe precautions for handling

AN11436

Contextual Info: 62 7  % BFU530X NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU530X is part of the BFU5 family of transistors, suitable for small signal to medium

Contextual Info: 62 7  % BFU520 NPN wideband silicon RF transistor Rev. 2 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU520 is part of the BFU5 family of transistors, suitable for small signal to medium

Contextual Info: 62 7  % BFU530 NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU530 is part of the BFU5 family of transistors, suitable for small signal to medium

Contextual Info: 62 7  % BFU550 NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU550 is part of the BFU5 family of transistors, suitable for small signal to medium

Contextual Info: 62 7  BFU520A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU520A is part of the BFU5 family of transistors, suitable for small signal to medium