NXP STANDARD MARKING Search Results

Contextual Info: LF PA K 56 BUK7Y18-75B N-channel TrenchMOS standard level FET 1 March 2013 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

display vfd

Abstract: Vacuum Fluorescent Display VFD vfd schematics OM11070 vacuum fluorescent display
Contextual Info: Select site: English Home | About NXP | News | In Focus | Careers | Investors | Contact | my.NXP Type search here n Type # m i j k l m n Cross-ref m j k l n Site j k l Advanced search Products Microcontrollers Support Support Tools Standard ICs quick find

NTAG203

Abstract: AN11350 AN11276, NTAG Antenna Design Guide AN11276 NFC antenna design NXP NFC ANTENNA DESIGN nfc tag NTAG antenna design guide NTAG210 13.56 MHz square antenna
Contextual Info: NTAG210/212 NFC Forum Type 2 Tag compliant IC with 48/128 bytes user memory Rev. 3.0 — 14 March 2013 242330 Product data sheet COMPANY PUBLIC 1. General description NTAG210 and NTAG212 have been developed by NXP Semiconductors as standard NFC tag ICs to be used in mass market applications such as retail, gaming and publishing, in

NTAG216

Abstract: NTAG215 originality check
Contextual Info: NTAG213/215/216 NFC Forum Type 2 Tag compliant IC with 144/504/888 bytes user memory Rev. 3.1 — 13 December 2013 265331 Product data sheet COMPANY PUBLIC 1. General description NTAG213, NTAG215 and NTAG216 have been developed by NXP Semiconductors as standard NFC tag ICs to be used in mass market applications such as retail, gaming and

NTAG216

Contextual Info: NTAG213/215/216 NFC Forum Type 2 Tag compliant IC with 144/504/888 bytes user memory Rev. 3.0 — 24 July 2013 265330 Product data sheet COMPANY PUBLIC 1. General description NTAG213, NTAG215 and NTAG216 have been developed by NXP Semiconductors as standard NFC tag ICs to be used in mass market applications such as retail, gaming and

nxp Standard Marking

Contextual Info: R_10001 Guideline for the laser marking layout of WLCSP devices Rev. 01 — 10 February 2010 Report Document information Info Content Title R_10001 Short title 1 line R_10001 Subtitle Guideline for the laser marking layout of WLCSP devices Short subtitle (1 line) WLCSP marking guideline

Contextual Info: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D088 PMBD353 Schottky barrier double diode Product data sheet Supersedes data of 1999 May 25 2001 Oct 15 NXP Semiconductors Product data sheet Schottky barrier double diode FEATURES PMBD353 PINNING MARKING • Low forward voltage

PMBD353

Abstract: NXP PMBD353
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD353 Schottky barrier double diode Product data sheet Supersedes data of 1999 May 25 2001 Oct 15 NXP Semiconductors Product data sheet Schottky barrier double diode FEATURES PMBD353 MARKING • Low forward voltage

BLF4G08LS-160A

Abstract: J3A080GA4/T0BG1610 MARKING S08 NXP TJA1050T-CM,11 power+wizard+1.1+fault+codes SCC2691AC1A28 IP5004CX6 TDA8275AHN/C1,557 H3-BGA3XX_11 BZA456A
Contextual Info: NXP Semiconductors Product Discontinuation DN66 June 30, 2010 SEE DN66 NOTICE LETTER FOR APPLICABLE LAST TIME BUY TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. FOR ADDED INFORMATION, REFER TO NXP WEB-SITE "http://www.nxp.com/products/eol/"

FET marking codes

Abstract: FET MARKING CODE S20 marking diode JESD625-A SC-101
Contextual Info: PMZ1000UN N-channel TrenchMOS standard level FET Rev. 2 — 17 September 2010 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

Contextual Info: SO D1 23W PNS40010ER 400 V, 1 A high power density, standard switching time PN-rectifier Rev. 2 — 21 August 2012 Product data sheet 1. Product profile 1.1 General description High power density, standard switching time PN-rectifier with high-efficiency planar

PSMN4R4-80BS

Contextual Info: D2 PA K PSMN4R4-80BS N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK Rev. 1 — 22 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and

Contextual Info: D2 PA K PSMN5R0-80BS N-channel 80 V, 5.1 mΩ standard level MOSFET in D2PAK Rev. 1 — 20 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and

Contextual Info: PSMN2R0-60PS N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220 4 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications

Contextual Info: LF PA K 33 PSMN011-60MS N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33 4 June 2013 Product data sheet 1. General description Standard level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications

Contextual Info: BUK762R6-40E N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high

Contextual Info: BUK762R0-40E N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high

PSMN013-100PS

Contextual Info: PSMN013-100PS N-channel 100V 13.9mΩ standard level MOSFET in TO220. 10 August 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and

Contextual Info: LF PA K 56 PSMN020-100YS N-channel 100V 20.5mΩ standard level MOSFET in LFPAK 26 March 2014 Product data sheet 1. General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and

Contextual Info: D2 PA K PSMN2R8-40BS N-channel 40 V 2.9 mΩ standard level MOSFET in D2PAK Rev. 1 — 20 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and

Contextual Info: D2 PA K BUK761R3-30E N-channel TrenchMOS standard level FET Rev. 2 — 11 April 2012 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high

Contextual Info: D2 PA K BUK761R6-40E N-channel TrenchMOS standard level FET Rev. 2 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high

8860 MARKING

Contextual Info: D2 PA K BUK765R0-100E N-channel TrenchMOS standard level FET Rev. 2 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high

Contextual Info: LF PA K 56 PSMN020-100YS N-channel 100V 20.5mΩ standard level MOSFET in LFPAK 7 November 2013 Product data sheet 1. General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and