NX7002AK Search Results

TSSOP-6

Abstract: MOSFET TRANSISTOR SMD MARKING CODE 7
Contextual Info: NX7002AKS 60 V, dual N-channel Trench MOSFET Rev. 1 — 1 March 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: NX7002AKW 60 V, single N-channel Trench MOSFET 11 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T2 3 NX7002AK 60 V, single N-channel Trench MOSFET 13 February 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

NX7002AKW

Contextual Info: SO T3 23 NX7002AKW 60 V, single N-channel Trench MOSFET Rev. 1 — 1 March 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T2 3 NX7002AKA 60 V, single N-channel Trench MOSFET 18 February 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

NX7002AK

Abstract: smd code marking sot23 SMD MARKING QG 6 PIN
Contextual Info: NX7002AK 60 V, single N-channel Trench MOSFET 10 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: SO T2 3 NX7002AK 60 V, single N-channel Trench MOSFET Rev. 2 — 1 March 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: NX7002AK 60 V, single N-channel Trench MOSFET 13 December 2012 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

NX3008NBKMB

Abstract: BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS
Contextual Info: Small-signal MOSFET Selection Guide Broad selection of small-signal MOSFETs for a wide range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today´s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety

circuit diagram wireless spy camera

Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint

Contextual Info: UM10710 UBA20270DB1122 - 35 W/46 V/690 mA LED driver demo board Rev. 2 — 25 September 2013 User manual Document information Info Content Keywords UBA20270DB1122, demo board, LED, non-dimmable, PFC Abstract The UBA20270DB1122 is a non-dimmable 230 V mains 35 W LED driver

LT3791IFE-1

Contextual Info: LT3791-1 60V 4-Switch Synchronous Buck-Boost Controller Features Description 4-Switch Single Inductor Architecture Allows VIN Above, Below or Equal to VOUT n Synchronous Switching: Up to 98.5% Efficiency n Wide V Range: 4.7V to 60V IN n 2% Output Voltage Accuracy: 1.2V ≤ V

LT3791-1

Abstract: 35HVT100M LT3791FE-1 LT37911 suncon 4.7uf capacitor 35HVT220M IRf 48 MOSFET LT3791IFE SUNCON capacitor 12v 5A voltage regulator
Contextual Info: LT3791-1 60V 4-Switch Synchronous Buck-Boost Controller Features Description 4-Switch Single Inductor Architecture Allows VIN Above, Below or Equal to VOUT n Synchronous Switching: Up to 98.5% Efficiency n Wide V Range: 4.7V to 60V IN n 2% Output Voltage Accuracy: 1.2V ≤ V

Contextual Info: AN11304 MOSFET load switch PCB with thermal measurement Rev. 1 — 25 January 2013 Application note Document information Info Content Keywords Load switch, MOSFETs, DFN2020MD-6 SOT1220 , DFN2020-6 (SOT1118); DFN3333-8 (SOT873-1), thermal resistance Abstract