NVTFS5820NLWF Search Results
NVTFS5820NLWF Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| NVTFS5820NLWFTAG |
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NVTFS5820 - Power MOSFET 60V 29A 11.5 mOhm Single N-Channel u8FL | Original | 122.37KB | 6 | ||
| NVTFS5820NLWFTWG |
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NVTFS5820 - Power MOSFET 60V 29A 11.5 mOhm Single N-Channel u8FL | Original | 122.37KB | 6 |
NVTFS5820NLWF Price and Stock
Rochester Electronics LLC
Rochester Electronics LLC NVTFS5820NLWFTWGPOWER FIELD-EFFECT TRANSISTOR, 60V, 0.0115OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NVTFS5820NLWFTWG | 199 |
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NVTFS5820NLWF Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: NVTFS5820NL Power MOSFET 60 V, 11.5 mW, Single N−Channel, m8FL Features • • • • • • Small Footprint 3.3x3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVTFS5820NLWF − Wettable Flanks Product |
Original |
NVTFS5820NL NVTFS5820NLWF NVTFS5820NL/D | |
20lwContextual Info: NVTFS5820NL Power MOSFET 60 V, 11.5 mW, Single N−Channel, m8FL Features • • • • • • Small Footprint 3.3x3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVTFS5820NLWF − Wettable Flanks Product |
Original |
NVTFS5820NL NVTFS5820NLWF AEC-Q101 NVTFS5820NL/D 20lw |