Numonyx
Abstract: AN1822 "flash translation layer" Flash Translation Layer NAND FLASH TRANSLATION LAYER FTL NAND16GW3D2A AN1821 NAND FLASH TRANSLATION LAYER patent FLASH TRANSLATION LAYER FTL NAND flash memory
Contextual Info: AN1821 Application note Garbage collection in NAND flash memories This application note describes the garbage collection algorithm that Numonyx recommends to implement in the flash translation layer FTL software for NAND flash memories. 1 Introduction The flash translation layer is an additional software layer between the file system and the
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an1821numonyxan1822flash translation layer+5nand flash translation layer ftlnand16gw3d2anand flash translation layer patentflash translation layer ftlnand flash memory
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S29GL064N application notes
Abstract: TSOP56 FOOTPRINT S29GL064N Numonyx M29W640GS hardware protection of S29GL064N Numonyx software and application Spansion Flash M29W640GT SPANSION 16
Contextual Info: Migrating to Spansion S29GL-N from Numonyx M29W 32-64 Mb Application Note 1. Introduction This Application Note details how to migrate designs from Numonyx™ 32 Mbit M29W320E and 64 Mbit M29W640G Flash Memory devices to Spansion® 32 Mbit S29GL032N and 64 Mbit S29GL064N MirrorBit®
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s29gl-nm29w320em29w640gs29gl032n+10s29gl064ns29gl064n application notestsop56 footprintnumonyxm29w640gshardware protection of s29gl064nnumonyx software and applicationspansion flashm29w640gtspansion 16
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130nm
Abstract: numonyx intel strataflash p33 188 p33 Transistor NUMONYX 65nm P33-65nm strataflash 512 p33
Contextual Info: Conversion Guide: NumonyxTM StrataFlash Embedded Memory P33 256-Mbit, 256-Mbit/256Mbit 130nm to 65nm Application Note - 909 Nov 2008 Application Note 1 Nov 2008 Order Number: 320005-04 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR
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256-mbit256-mbit/256mbit130nmp33-130nm+7p33-65nmnumonyx intelstrataflash p33188 p33 transistornumonyx65nmstrataflash 512 p33
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Numonyx StrataFlash JS28F256P30
Abstract: JS28F256P30 28f256p30 Numonyx 28f256p30 JS28F256P30T NUMONYX xilinx bpi 28F256P Numonyx P30 XAPP973 Numonyx
Contextual Info: Application Note: Virtex-5 FPGAs R XAPP973 v1.4 March 8, 2010 Summary Indirect Programming of BPI PROMs with Virtex-5 FPGAs Author: Stephanie Tapp Virtex -5 FPGAs and ISE® software support configuration from and programming of industrystandard, parallel NOR flash memory (BPI PROMs). Industry standard BPI PROMs are an
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xapp973numonyx strataflash js28f256p30js28f256p3028f256p30+6numonyx 28f256p30js28f256p30tnumonyx xilinx bpi28f256pnumonyx p30numonyx
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SPARTAN 6 spi numonyx
Abstract: AT45DB XAPP974 M25PXX NUMONYX xilinx spi spi flash parallel port spi In Circuit Serial Programming M45PE M25PE 8192KB
Contextual Info: ’ Application Note: Spartan-3A FPGAs Indirect Programming of SPI Serial Flash PROMs with Spartan-3A FPGAs R XAPP974 v1.1.3 March 24, 2009 Author: Jameel Hussein Summary This document describes the hardware setup, file generation flow, and software flow for
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xapp974m25pxxspartan 6 spi numonyxat45db+6numonyx xilinx spispi flash parallel portspi in circuit serial programmingm45pem25pe8192kb
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AI09
Contextual Info: NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, SLC NAND flash memories Features • High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage applications
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nand128-anand256-a128-mbit256-mbit+3528-byte/264-word32-mbitai09
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M25PXX
Abstract: x95108 simple spi flash spi flash spi In Circuit Serial Programming NUMONYX xilinx spi virtex 5 M25P application note M25PE spi flash m25pxx spi flash spartan 6
Contextual Info: ’ Application Note: Spartan-3E and Virtex-5 FPGAs R XAPP951 v1.2 January 29, 2009 Summary Configuring Xilinx FPGAs with SPI Serial Flash Author: Stephanie Tapp This application note discusses the Serial Peripheral Interface (SPI) configuration mode introduced in the Virtex -5 and Spartan®-3E FPGA families. The required connections to
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xapp951m25pxxx95108simple spi flash+7spi flashspi in circuit serial programmingnumonyx xilinx spi virtex 5m25p application notem25pespi flash m25pxxspi flash spartan 6
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MX29GL256
Abstract: 28F512P30 Numonyx M29W256G 28F00AP30 w25q128 MX25L6445 28F00AM29EW M29DW127G 28F128P30 PF38F3040M0Y3D
Contextual Info: Spansion NOR Flash Memory Competitive Cross Reference Guide December 2009 Parallel 1.8V Density Voltage Bus Mb (V) VIO (V) Type Bus Sector Width Type # Initial Access Burst Speed Banks Times (ns) (MHz) Packages Temp Range Recommended Pin Software Spansion OPN Compatible Compatible Notes
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at49sv163d48-pin48-balls29as016j+12en29sl800s29as00gestmx29gl25628f512p30 numonyxm29w256g28f00ap30w25q128mx25l644528f00am29ewm29dw127g28f128p30pf38f3040m0y3d
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package tsop48
Abstract: LGA52 ai12472 nand flash lga NAND08GW3C2B LGA-52 NAND0
Contextual Info: NAND08GW3C2B 8-Gbit, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Features • High density multilevel cell MLC flash memory – 8 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage applications
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nand08gw3c2b2112-bytetsop48lga52+5package tsop48ai12472nand flash lgalga-52nand0
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JS28F256J3F105
Abstract: RC28F256J3F-95 TE28F256J3F105 js28f256j3f TE28F256J3F PC28F256J3F95 RC28F256J3F95 JS28f256
Contextual Info: Numonyx StrataFlash Embedded Memory J3-65nm 256-Mbit Datasheet Product Features Architecture — Multi-Level Cell Technology: Highest Density at Lowest Cost — 256 symmetrically-sized blocks of 128 Kbytes Performance — 95 ns initial access time for Easy BGA
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j3-65nm256-mbit16-word512-word+1246mbyte/s00ffh16-bit32-bitjs28f256j3f105rc28f256j3f-95te28f256j3f105js28f256j3fte28f256j3fpc28f256j3f95rc28f256j3f95js28f256
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NAND512W3A2C
Contextual Info: NAND512R3A2C NAND512R4A2C NAND512W3A2C 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Not For New Design Features ● High density NAND flash memories – 512-Mbit memory array – Cost effective solutions for mass storage applications
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nand512r3a2cnand512r4a2cnand512w3a2c512-mbit+1528-byte/264-word
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JS28F128M29EWL
Abstract: JS28F064M29 JS28F128M29 JS28F128M29EWH M29EWT JS28F064 M29EWB JR28F032M29EWT JR28F064M29EW JS28F128M29EW
Contextual Info: Numonyx Axcell M29EW Datasheet 128-Mbit, 64-Mbit, 32-Mbit x8 / x16, page read 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read
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m29ew128-mbit64-mbit32-mbit+14256-word128mbit64mbit-flash/parallel-nor-flash/js28f064m29ewhajs28f128m29ewljs28f064m29js28f128m29js28f128m29ewhm29ewtjs28f064m29ewbjr28f032m29ewtjr28f064m29ewjs28f128m29ew
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js28F128j3f75
Abstract: JS28F128J3f-75 28F640J3D js28f640j3f75 js28f640J3F JS28F128J3F numonyx embedded Flash memory JS28F640J3F-75 PC28F640J3F75 RC28F640J3
Contextual Info: Numonyx Embedded Flash Memory J3 65 nm Single Bit per Cell (SBC) 32, 64, and 128 Mbit Datasheet Product Features Architecture — Symmetrical 128-KB blocks — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks) — Blank Check to verify an erased block
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128-kb256-word256byte56-lead+1364-ball128-mbit56-tsopjs28f128j3f75js28f128j3f-7528f640j3djs28f640j3f75js28f640j3fjs28f128j3fnumonyx embedded flash memoryjs28f640j3f-75pc28f640j3f75rc28f640j3
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NAND512W3A2S
Abstract: nand512r3a2s VFBGA63 NAND512W4A2S 70nM NUMonyx NAND NAND512W3A2
Contextual Info: Numonyx NAND SLC small page 70 nm Discrete 512 Mbit, 528 Byte/264 Word page, x8/x16, 1.8 V/3 V Features – Hardware program/erase locked during power transitions Density – 512 Mbit: 4096 blocks Electronic signature – Manufacturer ID: x8 device: 20h
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byte/264x8/x16nand512w3a2snand512r3a2s+5vfbga63nand512w4a2s70nmnumonyx nandnand512w3a2
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JS28F256m
Abstract: js28f256m29 JS28F512 256M29EWH
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers
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28f128j3d75
Abstract: 28f320j3d75 28F640J3D75 JS28F128J3D-75 28F128J3D-75 JS28F320J3D-75 28F128J3d 28F640J3D 28F320J3D-75 28f256j3d
Contextual Info: Numonyx Embedded Flash Memory J3 v D 32, 64, 128, and 256 Mbit (Monolithic) Datasheet Product Features Architecture — Symmetrical 128-Kbyte blocks — 256 Mbit (256 blocks) — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks)
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EN25Q32
Abstract: EN25Q32A VDFPN8 spi flash en25q32a NUMONYX M25P32 VFQFPN8 Numonyx software and application EN25 MLP8
Contextual Info: Eon Silicon Solution Inc. Application Note EON EN25Q32A vs Numonyx M25P32 Specification Comparison This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 02/02
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en25q32am25p32200mil208mil+9100nsen25q32vdfpn8spi flash en25q32anumonyxvfqfpn8numonyx software and applicationen25mlp8
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2200H
Abstract: EN29GL064 M29W640 M29W640GT M29W640GH M29W640GL
Contextual Info: Eon Silicon Solution Inc. Application Note Eon Flash EN29GL064H/L/T/B vs NUMONYX Flash M29W640GH/L/T/B This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/ 07/21
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EN25Q40
Abstract: numonyx m25p40 VFQFPN8 Numonyx software and application Numonyx Application Note mlp8 M25P40 MLP8 Dual Output SPI numonyx M25P* Silicon Solution
Contextual Info: Eon Silicon Solution Inc. Application Note EON EN25Q40 vs Numonyx M25P40 Specification Comparison This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 02/02
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en25q40m25p40150mil100ns+8numonyx m25p40vfqfpn8numonyx software and applicationnumonyxapplication note mlp8mlp8dual output spi numonyxm25p* silicon solution
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JS28F512M29
Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers
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NAND02GR3B2D
Abstract: NAND02GR4B2D NAND02GW3B2DN6 NAND02G-B2D NAND02GW3B2D VFBGA63 nand flash ONFI 3.0 ONFI nand 2112B
Contextual Info: NAND02G-B2D 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories Features • High density NAND flash memory – Up to 2 Gbits of memory array – Cost-effective solution for mass storage applications ■ NAND interface
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nand02g-b2d2112-byte/1056-wordtsop48nand02gr3b2d+7nand02gr4b2dnand02gw3b2dn6nand02gw3b2dvfbga63nand flash onfi 3.0onfi nand2112b
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JS28F512
Abstract: JS28F256M29EWL M29EWL js28f256m29 JS28F512M29 JS28F00am29 PC28F512 5D200 PC28F256M29
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers
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m29ew256-mbit512-mbitx8/x16+15100ns512-word14mb/skbytes/6411-apr-2011pc28f00am29ewhbjs28f512js28f256m29ewlm29ewljs28f256m29js28f512m29js28f00am29pc28f5125d200pc28f256m29
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M29EWL
Abstract: M29EW JS28F00AM29EWH 28F256M29EW JS28F00AM29EW
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers
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JS28F00am29
Abstract: JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers
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