NTLJS1102P Search Results

506AP

Abstract: tl 72 oz NTLJS1102PTAG NTLJS1102PTBG
Contextual Info: NTLJS1102P Power MOSFET −8 V, −8.1 A, mCOOL] Single P−Channel, 2x2 mm, WDFN package Features • WDFN Package with Exposed Drain Pad for Excellent Thermal • • • • • • Conduction Lowest RDS on in 2 x 2 mm Package 1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate

Contextual Info: NTLJS1102P Advance Information Power MOSFET −8 V, −8.1 A, mCOOL] Single P−Channel, 2x2 mm, WDFN package Features http://onsemi.com • WDFN Package with Exposed Drain Pad for Excellent Thermal • • • • • • Conduction Lowest RDS on in 2 x 2 mm Package

Contextual Info: NTLJS1102P Power MOSFET −8 V, −8.1 A, mCOOL] Single P−Channel, 2x2 mm, WDFN package Features • WDFN Package with Exposed Drain Pad for Excellent Thermal • • • • • • Conduction Lowest RDS on in 2 x 2 mm Package 1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate

single phase thyristor controller ic

Abstract: 2 x 20w amplifier Peak and Hold PWM MOSFET Predriver sc70-5 mosfet driver 2N7002-SOT23 NCP1652 NCS2560 dpdt array circuit mosfet ac switch UDFN-8
Contextual Info: The information contained in this Quarterly Update represents ON Semiconductor’s current and planned new products. For additional information regarding any of these products, please visit our website at www.onsemi.com. Operational Amplifiers/Comparators