NTJD2101PT1 Search Results

NTJD2101PT1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NTJD2101PT1		On Semiconductor	Transistor Mosfet P-CH 8V 0.59A 6SOT-363 T/R	Original	PDF	39.31KB	4

NTJD2101PT1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
419B-02 Abstract: NTJD2101PT1 Contextual Info: NTJD2101PT1 Product Preview Trench Power MOSFET -8.0 V Dual, P-Channel, Gate Zener, SC-88 This P-Channel dual device was designed with a small footprint package 2 X 2 mm and ON Semiconductor’s leading trench process featuring low RDS(on) for reduced footprint and increased circuit	Original	NTJD2101PT1 SC-88 NTJD2101PT1/D 419B-02 NTJD2101PT1	PDF

Catalog Datasheet

Type

Document Tags

PDF

419B-02

Abstract: NTJD2101PT1
Contextual Info: NTJD2101PT1 Product Preview Trench Power MOSFET -8.0 V Dual, P-Channel, Gate Zener, SC-88 This P-Channel dual device was designed with a small footprint package 2 X 2 mm and ON Semiconductor’s leading trench process featuring low RDS(on) for reduced footprint and increased circuit

Original

NTJD2101PT1 SC-88 NTJD2101PT1/D 419B-02 NTJD2101PT1

PDF