NTE63 Search Results

NTE631

Abstract: NTE633
Contextual Info: NTE633 Silicon Rectifier Diode High Speed Switching Surface Mount Description: The NTE631 is a high−speed switching diode fabricated in planar technology and encapsulated in a very small rectangular ceramic SMD package. Features: D Small Ceramic SMD Package

NTE638

Contextual Info: NTE638 Damper Diode for TV Applications Absolute Maximum Ratings: Peak Reverse Voltage, VRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1600V Average Rectified Forward Current, IF AV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A

NTE632

Contextual Info: NTE632 Silicon Rectifier Diode Dual Switching Series Pair Surface Mount Features: D Small Ceramic SMD Package D High Switching Speed D High Conductance D SOT−23 Molded Plastic Case Applications: D General Purpose Switching Applications Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified)

NTE6368

Abstract: 4500a NTE6369
Contextual Info: NTE6368 & NTE6369 Silicon Power Rectifier Stud Mount, Fast Recovery, 250 Amp Features: D Fast Recovery Times D Soft Recovery Characteristics D Standard NTE6368 and Reverse (NTE6369) Polarities D High Surge Current Ratings D High Rated Blocking Voltages Applications:

NTE6355

Abstract: NTE6354 NTE6359 NTE6356 NTE6357 NTE6358 NTE6362 NTE6363 NTE6364 NTE6365
Contextual Info: NTE6354 thru NTE6365 Silicon Power Rectifier Diode 300 Amp, DO9 Features: D Diffused Diode D High Voltage Ratings up to 1600 Volts D High Surge Current Capabilities D Available in Anode−to−Case or Cathode−to−Case Style Ratings and Characteristics:

Contextual Info: NTE639 General Purpose Silicon Rectifier High Voltage, Standard Recovery DO201AD Type Package Features: D Diffused Junction D Low Forward Voltage Drop D High Current Capability D High Reliability D High Surge Current Capability Maximum Ratings and Electrical Characteristics:

NTE631

Contextual Info: NTE631 Silicon Rectifier Diode High−Speed Switch Surface Mount Description: The NTE631 is a high−speed switching diode fabricated in planar technology and encapsulated in a very small rectangular ceramic SMD package. Features: D Small Ceramic SMD Package

NTE6355

Abstract: NTE6358
Contextual Info: NTE6354 thru NTE6365 Silicon Power Rectifier Diode, 300 Amp Features: D Diffused Diode D High Voltage Ratings up to 1600 Volts D High Surge Current Capabilities D Available in Anode–to–Case or Cathode–to–Case Style Ratings and Characteristics: Average Forward Current TC = +130°C Max , IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A

NTE6357

Abstract: NTE6355 151000 NTE6354 NTE6356 NTE6358 NTE6359 NTE6362 NTE6363 NTE6364
Contextual Info: NTE6354 thru NTE6365 Silicon Power Rectifier Diode, 300 Amp Features: D Diffused Diode D High Voltage Ratings up to 1600 Volts D High Surge Current Capabilities D Available in Anode–to–Case or Cathode–to–Case Style Ratings and Characteristics: Average Forward Current TC = +130°C Max , IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A

NTE634

Abstract: 400v 20A ultra fast recovery diode RESISTANCE 46K NTE635 NTE636
Contextual Info: NTE634 thru NTE636 2 Amp Ultra Fast Recovery Controlled Avalanche Rectifiers Description: The NTE634, NTE635, and NTE636 are 2A Controlled Avalanche Rectifiers encased in a rugged glass SOD57 axial lead package, using a high temperature alloyed construction. These packages are

NTE63

Contextual Info: NTE63 Silicon NPN Transistor High Gain, Low Noise Amp Description: The NTE63 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low noise tuned and wiseband small–signal amplifiers and applications requiring fast switching times.

NTE637

Contextual Info: NTE637 Schottky Barrier Diode Surface Mount Absolute Maximum Ratings: (Ta = +25°C, Note 1, unless otherwise specified) Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

NTE629

Abstract: NTE630
Contextual Info: NTE629 & NTE630 Silicon Rectifier Fast Recovery, Dual, Center Tap Description: The NTE629 and NTE630 are dual, fast recovery silicon rectifiers in a TO220 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers and low RF interference.

NTE7232

Abstract: NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A
Contextual Info: NTE SEMICONDUCTORS ADDED SINCE MAY 2013 NTE PART NO. DESCRIPTION Datasheet Link NTE573-1 RECTIFIERS Schottky Barrier Rectifier, 100V, 5 Amp, DO‐201AD Case NTE573‐2 Schottky Barrier Rectifier, 200V, 5 Amp, DO‐201AD Case