NTE342 Search Results
NTE342 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| NTE342 |
|
Silicon NPN Transistor RF Power Output (P O = 6W, 175MHz) | Original | 21.65KB | 2 |
NTE342 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
NTE342
Abstract: 4 watt VHF transistor 6w "RF Power Amplifiers" transistor power rating 5w
|
Original |
NTE342 175MHz) NTE342 175MHz 100mA, 600mW, 4 watt VHF transistor 6w "RF Power Amplifiers" transistor power rating 5w | |
NTE342Contextual Info: NTE342 Silicon NPN Transistor RF Power Output PO = 6W, 175MHz Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz) |
Original |
NTE342 175MHz) NTE342 175MHz 100mA, 600mW, | |
|
Contextual Info: NTE342 Silicon NPN Transistor RF Power Output PO = 6W, 175MHz Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz) |
Original |
NTE342 175MHz) NTE342 175MHz 100mA, 600mW, |