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    NTE3310 Search Results

    NTE3310 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NTE3310
    		NTE Electronics Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Original PDF 18.53KB 2

    NTE3310 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NTE3310

    Abstract: NTE331
    Contextual Info: NTE3310 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		NTE3310 NTE3310 NTE331 PDF

    NTE3310

    Contextual Info: NTE3310 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		NTE3310 NTE3310 PDF