Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NTE3301 Search Results

    NTE3301 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NTE3301
    NTE Electronics Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Original PDF 19.29KB 2

    NTE3301 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NTE3301

    Contextual Info: NTE3301 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D Low Saturation Voltage D Enhancement Mode D 20V Gate Drive Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original
    NTE3301 NTE3301 PDF

    NTE3301

    Contextual Info: NTE3301 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D Low Saturation Voltage D Enhancement Mode D 20V Gate Drive Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original
    NTE3301 NTE3301 PDF