NTE302 Search Results

NTE3034A

Abstract: 500UW automatic heat detector NTE3029A NTE3035A
Contextual Info: NTE3035A Phototransistor Detector Description: The NTE3035A is designed for a wide variety of industrial processing and control applications requiring a sensitive detector. The NTE3034A is is an identical package and is designed to be used with the NTE3029A infrared emitter.

NTE3026

Abstract: Gallium phosphide green led
Contextual Info: NTE3026 Light Emitting Diode LED Description: The Red/Green NTE3026 bicolor lamp is a white diffused, wide viewing angle, dual chips, utilizing Gallium Arsenide Phosphide on Gallium Phosphide red LED and Gallium Phosphide on Gallium Phosphide green LED. These dual chips operate independently of each other.

NTE3029A

Contextual Info: NTE3029A Infrared–Emitting Diode Description: The NTE3029A 940nm LED is a multi–purpose device designed for use in numerous applications. This Gallium Arsenide device is manufactured to tight tolerances for maximum performance and long lifetime. Features:

NTE3025

Contextual Info: NTE3025 Light Emitting Diode LED Description: The NTE3025 is a red Light emitting Gallium Arsenide Phosphide diode in a T–1 3/4 (5mm) type package designed for use in applications such as instruments, printed circuit board indicators, and board mounted panel displays.

NTE3029A

Abstract: NTE3029B
Contextual Info: NTE3029A Infrared–Emitting Diode Description: The NTE3029A 940nm LED is a multi–purpose device designed for use in numerous applications. This Gallium Arsenide device is manufactured to tight tolerances for maximum performance and long lifetime. Features:

NTE3029B

Contextual Info: NTE3029B Infrared–Emitting Diode Description: The NTE3029B is a 940nm LED encapsulated in a clear, wide angle, sidelooker package. Features: D Good Optical to Mechanical Alignment D High Irradiance Level Absolute Maximum Ratings: TA = +25°C unless otherwise specified

NTE3034A

Abstract: NTE3029A OPTICAL INTERRUPTER position NTE303
Contextual Info: NTE3034A Phototransistor Detector Description: The NTE3034A is designed for industrial processing and control applications such as light modulators, shaft or position encoders, and end tape detectors. The NTE3034A is designed to be used with the NTE3029A infrared emitter in optical slotted coupler/interrupter applications.

NTE3029B

Contextual Info: NTE3029B Infrared - Emitting Diode Description: The NTE3029B is a 940nm LED encapsulated in a clear, wide angle, sidelooker package. Features: D Good Optical to Mechanical Alignment D High Irradiance Level Absolute Maximum Ratings: TA = +25°C unless otherwise specified

diode led 5mm

Abstract: NTE3024
Contextual Info: NTE3024 Light Emitting Diode LED 5mm (T−1 3/4) Package Description: The NTE3024 is a discrete LED indicator device in a 5mm (T−1 3/4) type package. This greenish− yellow source color device is made with Gallium Phosphide and a green diffused lens.

IC 386

Abstract: CB transmitter NTE302
Contextual Info: NTE302 Silicon NPN Transistor AM, CB Transmitter Driver, Switch Description: D 27−MHz AM CB Transmitter Driver Stage Switch Absolute Maximum Ratings: Collector−to−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

NTE3023

Abstract: NTE3024 NTE3020 NTE3021 NTE3022
Contextual Info: NTE3020 thru NTE3024 Light Emitting Diode LED Description: The NTE3020 through NTE3024 LEDs offer a variety of lens effects and color availability. The Red (NTE3020) source color device is made with Gallium Arsenide Phosphide on Gallium Arsenide Red Light Emitting Diode. The High Efficiency Red (NTE3022) and Orange (NTE3023) source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.

Contextual Info: NTE3024 Light Emitting Diode LED Description: The NTE3024 is a discrete LED indicator device in a 5mm (T-1 3/4) type package. This green source color device is made with Gallium Phosphide on Gallium Phosphide Green Light Emitting Diode. Features: D Low Power Consumption

NTE3027

Contextual Info: NTE3027 Infrared Emitting Diode High Speed for Remote Control Description: The NTE3027 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue–grey tinted plastic package. Features: D Low Forward Voltage D High Radiant Power and Radiant Intensity

NTE3020

Abstract: NTE3022 NTE3023 NTE3021
Contextual Info: NTE3020 thru NTE3023 Light Emitting Diode LED Description: The NTE3020 through NTE3023 LEDs offer a variety of lens effects and color availability. The Red (NTE3020) source color device is made with Gallium Arsenide Phosphide on Gallium Arsenide Red Light Emitting Diode. The High Efficiency Red (NTE3022) and Orange (NTE3023) source color de-

NTE3026

Contextual Info: NTE3026 Light Emitting Diode LED Description: The Red/Green NTE3026 bicolor lamp is a white diffused, wide viewing angle, dual chips, utilizing Gallium Arsenide Phosphide on Gallium Phosphide Red LED and Gallium Phosphide on Gallium Phosphide Green LED. These dual chips operate independently of each other.

Contextual Info: NTE3026 Light Emitting Diode LED Description: The Red/Green NTE3026 bicolor lamp is a white diffused, wide viewing angle, dual chips, utilizing Gallium Arsenide Phosphide on Gallium Phosphide Red LED and Gallium Phosphide on Gallium Phosphide Green LED. These dual chips operate independently of each other.

NTE3028

Contextual Info: NTE3028 Infrared Emitting Diode PN Gallium Arsenide Description: The NTE3028 is designed for applications requiring high power output, low drive power, and very fast response time. This device is used in industrial processing and control, light modulators, shaft or position encoders, punched card readers, optical switching, and logic circuits. It is spectrally matched for