NTE237 Search Results

Contextual Info: NTE2375 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID

NTE2372

Contextual Info: NTE2372 MOSFET P–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Fast Switching D Ease of Paralleling D Simple Drive Requirements D TO220 Case Style Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5A

NTE2374

Contextual Info: NTE2374 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A

Contextual Info: NTE237 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)80 I(C) Max. (A)3 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.

NTE2379

Contextual Info: NTE2379 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V

NTE2371

Contextual Info: NTE2371 MOSFET P–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D P–Channel D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID

NTE2370

Contextual Info: NTE2369 NPN & NTE2370 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 4.7k Bias Resistors Features: D Built–In Bias Resistor (R1 = 4.7kΩ, R2 = 4.7kΩ) D Small–Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit

NTE2376

Contextual Info: NTE2376 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID

DC motor control 120w 30v

Abstract: DC motor control speed 120w 30v NTE2378 N-Channel MOSFET 200v
Contextual Info: NTE2378 MOSFET N–Channel Enhancement Mode, High Speed Switch Description: The NTE2378 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical

nte2377

Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
Contextual Info: NTE2377 MOSFET N–Channel, Enhancement Mode, High Speed Description: The NTE2377 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical

NTE237

Contextual Info: NTE237 Silicon NPN Transistor RF Power Output PO = 3.5W, 27MHz Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V

Contextual Info: NTE2373 MOSFET P–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11A

NTE199

Abstract: NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K
Contextual Info: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page MPX2010GS MPX2050DP MPX2050GP MPX2100A MPX2100AP 15.08 17.27 17.69 17.74 14.57 MOT

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

NTE135A

Abstract: NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159
Contextual Info: REPLACEMENT SEMICONDUCTOR KITS NTEKCOM SERIES REPLACEMENT SEMICONDUCTOR KITS Each kit is housed in a 30–drawer cabinet and comes with an NTE Semiconductor Technical Guide and Cross Reference. All devices provided in these kits are also available separately.