NT - 90 1Z Search Results

Contextual Info: I NT ERN AT ION AL REC TIFIER 2bE D 4ÔS54S2 QQlObflT 5 International Iior I Rectifier Fast Recovery Rectifiers Part V RRM ’ f AV TC *f s m W 50Hz number •n< £ 90 TO 110 AMPS 60Hz (V) (A) (°C) (A) (V) 600 .600 800 800 1000 1000 1200 1200 1400 1400

am26c311

Abstract: AM26LS31 D3636 AM26C31C AM26C31I DS26C31 RS-422-A
Contextual Info: AM26C31C, AM26C311 QUADRUPLE DIFFERENTIAL LINE DRIVERS SLLS103B —D3636, DECEMBER 1990-REVISED JANU AR Y 1993 Meets EIA Standard RS-422-A and CCITT Recommendation V.11 D OR N PACKAGE TOP VIEW Low Power, Ice = 100 |iA iyp 1A[ 1 U 1Y[ 2 1Z[ 3 G[ 4 22[ 5 Operates From a Single 5-V Supply

1ZB220-Y

Abstract: 1ZB36 bl 1zb36 1ZB200-Y 1ZB220 1zb43 1ZB10 1ZB11 1ZB12 1ZB13
Contextual Info: BL GALAXY ELECTRICAL ZENER DIODES 1ZB6.8 - 1ZB390 POWER DISSIPATION: 1.0 W FEATURES DO - 41 Silicon planar power zener diodes For use in stabilizing and clipping curcuits with high power rating. Standard zener voltage tolerance is ±10%. Add suffix "A" for ±5% tolerance. Other zener voltage

Contextual Info: Diodes SMD Type Surface Mount Zener Diode MM3Z8V2S SOD-323 Unit: mm • Features +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 +0.1 1.3-0.1 ● Planar Die Construction ● Ultra-Small Surface Mount Package ● Ideally Suited for Automated Assembly Processes

1ZB36 bl

Abstract: 1ZB36 1ZB220-Y 1ZB200-Y 1ZB200Y 1ZB36 zener 1ZB220Y 1zb43 Zener IT 243 1ZB30 bl
Contextual Info: BL GALAXY ELECTRICAL ZENER DIODES 1ZB6.8 - 1ZB390 POWER DISSIPATION: 1.0 W FEATURES DO - 41 GLASS Silicon planar power zener diodes For use in stabilizing and clipping curcuits with high power rating. Standard zener voltage tolerance is ±10%. Add suffix "A" for ±5% tolerance. Other zener voltage

Contextual Info: Product specification MM3Z8V2S SOD-323 Unit: mm • Features +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 +0.1 1.3-0.1 ● Planar Die Construction ● Ultra-Small Surface Mount Package ● Ideally Suited for Automated Assembly Processes +0.1 2.6-0.1 1.0max

2m170z

Abstract: 2M11Z 2M12Z 2M13Z 2M14Z
Contextual Info: TAIWAN SEMICONDUCTOR [ s Pb RoHS 2M6.8Z - 2M200Z 2.0 Watts Glass Passivated Junction Silicon Zener Diodes COMPLIANCE DO-15 Features .1 4 0 3 .6 1 .0 (2 5 .4 ) MIN. .1 0 4 (2 .6 ) DIA, Plastic package has Underwriters Laboratory Flammability Classification

74hct4052 pin diagram

Abstract: 74HCT4052 4000B 74HC 74HC4052 74HCT CT4052 HCT4052
Contextual Info: 7 4 H C /H C T 4 0 5 2 MSI DUAL 4-CHANNEL ANALOG M ULTIPLEXER/DEM U LTIPLEXER FEATURES • • • • • • T Y P IC A L Wide analog input voltage range: ± 5 V. Low "O N " resistance: 80 £2. typ. at V qq — V gg = 4.5 V 70 iZ (typ.) at V qq — = 6.0 V

D2325

Abstract: SN75159 RS-422-A SN75158
Contextual Info: SN75159 DUAL DIFFERENTIAL LINE DRIVER WITH 3-STATE OUTPUTS SLLS088A - D2325, JANUARY 1977 - REVISED FEBRUARY 1993 Meets EIA Standard RS-422-A Single 5-V Supply D O R N PACKAGE TOP VIEW Balanced Line Operation TTL Compatible NC[ 1 u 14 ] v c c 13 ] 2 Z 1Z[ 2

HCT4053

Abstract: 4000B
Contextual Info: 7 4 H C /H C T 4 0 5 3 MSI T R IP L E 2 -C H A N N E L A N A L O G M U L T IP L E X E R /D E M U L T IP L E X E R FEATURES • tp Z H / tP Z L tP H Z / CPLZ The 7 4 H C /H C T 4 0 5 3 are high-speed Si-gate CMOS devices and are pin co m p a tib le w ith the " 4 0 5 3 ” o f the

diode E1110

Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Contextual Info: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t

6HB5

Abstract: "DC Power Connector"
Contextual Info: REVISIONS SYM DESCRIPTION Copying of this d o cf fA e n t.- , a n t f "g iv in g it to others and the us*i or c o m m u n i c a t i o n of the c o n t e n t s t h e r e o f , are f o r b i d d e n w it h o u t e x pr es s aut ho r ity O ffe n d e rs are liable

74HC4316

Abstract: 74HC 74HCT 74HCT bilateral switch 7Z93977
Contextual Info: 74HC/HCT4316 MSI QUAD B IL A T E R A L SWITCHES FEATURES • • • • • T Y P IC A L Low "O N " resistance: 160 £2 typ. at V q q — ^E E “ ^ 120 H (typ.) at V q c — V g g = 6.0 V 80 (typ.) at V q q — V g g = 9.0 V Logic level translation: to enable 5 V logic to communicate

NT - 90 1Z

Contextual Info: 54ACT11800,74ACT11800 TRIPLE 4-INPUT AND/NAND CLOCK DRIVERS D3591. JULY 1990 5 4 A C T 11 8 00 . . . JT P A C K A G E Inputs Are TTL-Voltage Compatible 7 4A C T11 8 00 . . . D W O R NT P A C K A G E TOP V IE W Flow-Through Architecture Optimizes PCB Layout

scala3

Abstract: DELL 80905
Contextual Info: T H I 5 D R A WI NG I S Q U E S T O D I S E G N O NON TU COPYRIGHT UNPUBLI SHED. DEVE E S S E R E D I V U L G AT O 0 19 BY f R E L E A S E D F OR P U B L I C A T I O N E' C ONS EN TIT A LA DIV ULGAZIONE ALL RIGHTS RESERVED. I NCORPORATED. TUTTI I D I R I T T I S ONO R I S E R V A T I

km 1667

Abstract: LC8220 PXD26
Contextual Info: I i i j t n - KNft NX-4909A NO.»Í4909A = m m m m - = L - x 12896 M » -n -X J fc S ;4 9 0 9 t 3l/jb»A.‘C< «3< ,\ CMOS LSI L C 8 2 2 J P E G * 5 - S l i t M f ê Œ % S l - » « L S I JP E G - L S I LC8220 l i , J P E G (Joint Photographic Expert Group)*! tè K * « & L ,1zT 4 f |/)V

ADC12MEM0

Abstract: SPRDE01A VOICE msp430 ADC12CTL1 low-Cost Speech With MSP430 ADC12MCTL0 MSP430X13X MSP430 MSP-FET430P140 SLAS272
Contextual Info: Application Report SLAA131 –September 2001 A Low-Cost 12-Bit Speech CODEC Design Using the MSP430F13x Kes Tam, Vincent Chan MSP/MSC ABSTRACT This application report illustrates a design of a single chip speech codec ADC and DAC using the MSP430F133 MCU from Texas Instruments. The ADC part of this codec uses

2SD1823G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1823G Silicon NPN epitaxial planar type For low-frequency amplification • Package • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNRF2A7 Silicon NPN epitaxial planar type Unit: mm • Features 3 • Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package

2SD2345G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2345G Silicon NPN epitaxial planar type For low-frequency amplification • Package • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)

2SD1823G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1823G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency amplification • Package • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)

2SD1823

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1823 Silicon NPN epitaxial planar type For low-frequency amplification (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 • Features 3 Emitter-base voltage (Collector open)

2SD2345G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2345G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency amplification • Package • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)

2SD2345

Abstract: SC-75
Contextual Info: Transistors 2SD2345 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 Emitter-base voltage Collector open Collector current Peak collector current