NSP5430 Search Results

CIB1000

Abstract: stps205100ct NSP5428 NSP5430
Contextual Info: NSP5428 NSP5430 PRELIMINARY MEDIUM-POWER NPN SILICON TRANSISTORS .designed for switching and wide band amplifier applications. • • • LOW COLLECTOR-EM ITTER SATURATION VOLTAGE DC CURRENT GAIN SPECIFIED TO 7 AMPERES EXCELLENT SAFE OPERATING AREA M AXIM UM RATINGS*

NSP2880

Abstract: NSP3996 NSP3997 NSP5427 NSP5428 NSP5429 NSP5430 NSP5660 NSP5661 NSP5664
Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR POWER TRANSISTOR NPN PLANAR PACKAGE NPN TO-257 DEVICE TYPE VCEO VOLTS PEAK Ic AMPS NSP2880 70 NSP3996 V c E s a t min/max Ic @VCE A V max VOLTS Ic @ Ib A A 5.0 40-120 1.0/2.0 2.4 5.0/0.5 80 5.0 40-120 1.0/2.0 0.3 1.0/0.1

NSP2880

Abstract: NSP3996 NSP3997 NSP5427 NSP5428 NSP5429 NSP5430 NSP5660 NSP5661 NSP5664
Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR POWER TRANSISTOR NPN PLANAR PACKAGE NPN TO-257 DEVICE TYPE VCE0 VOLTS PEAK Ic AMPS NSP2880 70 NSP3996 ^ C E sat min/max Ic @VCE A V max VOLTS Ic @ Iß A A 5.0 40-120 1.0/2.0 2.4 5.0/0.5 80 5.0 40-120 1.0/2.0 0.3 1.0/0.1

Contextual Info: PRELIMINARY MEDIUM-POWER NPN SILICON TRANSISTORS .designed for switching and wide band amplifier applications. • • • LOW COLLECTOR-EMITTER SATURATION VOLTAGE DC CURRENT GAIN SPECIFIED TO 7 AMPERES EXCELLENT SAFE OPERATING AREA MAXIMUM RATINGS* RATINGS

NSP5665

Abstract: sat 1205
Contextual Info: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1481 *