NS 6 W 183 T Search Results

Nokia 3220 LCD

Abstract: ILI9163
Contextual Info: ILI9163 a-Si TFT LCD Single Chip Driver 132RGBx162 Resolution and 262K color Datasheet Version: V0.18 Document No.: ILI9163DS_V0.18.pdf ILI TECHNOLOGY CORP. 8F, No.38, Taiyuan St., Jhubei City, Hsinchu County, Taiwan 302, R.O.C. Tel.886-3-5600099; Fax.886-3-56-00585

185t2

Abstract: bdy28 BF 184 184T2 BDY26 BDY27 185T2A 185T2B
Contextual Info: * B D Y 2 6 183 T2 *B D Y 2 7 184 12 *B D Y 28 185 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA TRANSISTORS NPN SILICIUM , MESA DIFFUSES ^ Preferred device Dispositif recommandé LF large signal power amplification 180 V 200 V BDY 26 , 183 T2 BDY 27 , 184 T2

EDI8F8512C70B6C

Abstract: EDI8F8512LP A410 EDI8F8512C
Contextual Info: EDI8F8512C 512Kx8 Static Ram 512Kx8 Static RAM CMOS, Module Features 512Kx8 bit CMOS Static Random Access Memory • Access Times 20 thru 100ns • Data Retention Function EDI8F8512LP • TTL Compatible Inputs and Outputs • Fully Static, No Clocks High Density Packaging

EDI8F8512C

Abstract: EDI8F8512LP EDI8F8512LP100B6C A17-A18
Contextual Info: EDI8F8512C White Electronic Designs 512Kx8 STATIC RAM CMOS, MODULE FEATURES DESCRIPTION  512Kx8 bit CMOS Static The EDI8F8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 or 256Kx4 high speed Static RAMs mounted on a multilayered epoxy laminate (FR4) substrate.

Contextual Info: White Electronic Designs EDI8F8512C 512Kx8 STATIC RAM CMOS, MODULE FEATURES DESCRIPTION „ 512Kx8 bit CMOS Static The EDI8F8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 or 256Kx4 high speed Static RAMs mounted on a multilayered epoxy laminate (FR4) substrate.

jfet k 184

Abstract: transistor di 13001 CS 13001 DG180 DG182 DG187 13001 fet DG180-191 DG183 DG184
Contextual Info: glifi DG180-191 High-Speed Driver W ith Junction FET Switches FEATURES GENERAL DESCRIPTION • Constant ON-resistance for signals to ± 1 OV DG182, 18 5,188,191 , to ±7.5V (all devices]! • ±15V power supplies • <2nA leakage from signal channel in both ON and

VPS05178

Abstract: BFP183
Contextual Info: BFP 183 NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 4
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

Contextual Info: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • /f = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1316 1= B li O BFR 183 CO ESP: Electrostatic discharge sensitive device, observe handling precaution!

S14K320

Abstract: siemens RWF S14K420 varistor s20 k320 510k14 S20K320 S20K230 SIOV-S14K275 s14 k320 S14K460
Contextual Info: Disk Varistors, S Standard Construction • Round varistor element • Coating: epoxy resin, flame-retardant to UL 94 V-0 • Terminals: tinned copper wire New features • New high-energy varistors S14/S20 . E2 • PSpice models Approvals • • • •

IR 1838 T

Abstract: 1838 pin configuration ir IR 1838 T Pin number IR 1838 1838 T IR 1838 TO PIN DIAGRAM 1838 t pin diagram 1838 ir IR 1838 3.3 v CS40
Contextual Info: CYM1838 PRELIMINARY CYPRESS 128K x 32 Static RAM Module Features Functional Description • High-density 4-megabit SRAM module • High-speed CMOS SRAMs — Access time of 25 ns • 66-pin, 1.1-inch-square PGA package • Low active power — 4.0W max. • Hermetic SMD technology

APM2506N

Abstract: A102 APM2506NU 88628 N-CHANNEL ENHANCEMENT MODE POWER MOSFET to-252
Contextual Info: APM2506NU N-Channel Enhancement Mode MOSFET Pin Description Features z 25V/60A, Pin 3 D RDS ON = 5mΩ (typ.) @ VGS= 10V RDS(ON)= 7mΩ (typ.) @ VGS= 4.5V z Super High Dense Cell Design z Avalanche Rated z Reliable and Rugged 3 Pin 1 G 1 2 S Pin 2 Applications

OG191

Contextual Info: 43E D HARRIS SEMICOND SECTOR 4302271 GOB.bbflS 1 Hi HAS £B H A R R I S V A / D G 1 8 0 -1 9 1 S E M I C O N D U C T O R High-Speed Driver With JFET Switch GENERAL DESCRIPTION FEATURES The DG180 thru DG191 series of analog gates consist of 2 or 4 N-channei junction-type field-effect transistors JFET

ll90_3

Abstract: SPL CG81-2S MNxx circuit laser diode pulsed SPL PL90_3 High power laser diode laserdioden CG81-2S high power laser Laser-Diode 808
Contextual Info: High-Power Laser Diodes Leistungslaserdioden 175 High-Power Laser Diodes . Leistungslaserdioden . 175 Summary of Types .

CL 2181 ic

Abstract: AT/CL 2181 ic CL 2181
Contextual Info: ANALOG DEVICES DSP Microcomputers ADSP-2181 /ADSP-2183 FEATURES PERFORMANCE 30 ns Instruction Cycle Time @ 5.0 Volts 33 MIPS Sustained Performance 34.7 ns Instruction Cycle Time @ 3.3 Volts Single-Cycle Instruction Execution Single-Cycle Context Switch 3-Bus Architecture Allows Dual Operand Fetches in

ISL59530

Abstract: ISL59530IKZ ISL59531 V356 OVER14
Contextual Info: ISL59530 Data Sheet June 12, 2006 FN6220.1 16x16 Video Crosspoint Features The ISL59530 is a 300MHz 16x16 Video Crosspoint Switch. Each input has an integrated DC-restore clamp and an input buffer. Each output has a fast On-Screen Display OSD switch (for inserting graphics or other video) and an output

217 diode

Abstract: ISL59530 ISL59530IKZ ISL59531 V356 OVER12
Contextual Info: ISL59530 Data Sheet February 7, 2007 FN6220.3 16x16 Video Crosspoint Features The ISL59530 is a 300MHz 16x16 Video Crosspoint Switch. Each input has an integrated DC-restore clamp and an input buffer. Each output has a fast On-Screen Display OSD switch (for inserting graphics or other video) and an output

SMD MARKING CODE A12

Contextual Info: HYB 39S16160CT-5.5/-6/-7 16-MBit Synchronous DRAM 1M x 16-MBit Synchronous DRAM for High-Speed Graphics Applications • High Performance: • Full page optional for sequential wrap around -5.5 -6 -7 Unit fCKMAX @ CL = 3 183 166 143 MHz tCK3 5.5 6 7 ns

Contextual Info: TTL MSI TYPES SNS4H183, SN54LS183, SN74H183, SN74ÌSM3 DUAL CARRY-SAVE FULL ADDERS _ B U L L E T I N NO . P L - S 771 184fl, O C T O B E R 1 9 7 6 - R E V IS 6 D A U G U S T 1977 For Use in High-Speed Wallace-Tree Summing Networks

A6210

Abstract: rjp ch1 QFN65P400X400X80-17W2M A6210GEUTR-T IPC-7351 470M MR11 A6210 CONTROL NR8040T A6210GEUTR
Contextual Info: A6210 3 A, 2 MHz Buck-Regulating LED Driver Features and Benefits Description ▪ User-configurable on-time, achieving switching frequencies up to 2.0 MHz ▪ Brightness control through PWM of DIS pin ▪ Minimal external components required ▪ No output capacitor required

Contextual Info: Bulletin 12083 rev. B 08/94 International i ö r Rectifier SD300C.C s e r ie s STANDARD RECOVERY DIODES Hockey Puk Version Features • W ide current range ■ High voltage ratings up to 3200V ■ High surge current ca p abilities ■ D ittused junction ■

16x16 rgb led matrix

Abstract: Diode Mark ON B14 mux ic 157 ISL59530 ISL59530IKZ ISL59530IRZ ISL59531 V356
Contextual Info: ISL59530 Data Sheet June 3, 2008 FN6220.7 16x16 Video Crosspoint Features The ISL59530 is a 300MHz 16x16 Video Crosspoint Switch. Each input has an integrated DC-restore clamp and an input buffer. Each output has a fast On-Screen Display OSD switch (for inserting graphics or other video) and an output

FDC3535

Abstract: marking 535
Contextual Info: P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 mΩ Features General Description „ Max rDS on = 183 mΩ at VGS = -10 V, ID = -2.1 A This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and

Contextual Info: Dual P-Channel PowerTrench MOSFET -80 V, -2.1 A, 183 mΩ Features General Description ̈ Max rDS on = 183 mΩ at VGS = -10 V, ID = -2.1 A ̈ This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and

LF400

Contextual Info: yi/iyjxiyi/i 19-3127; Rev.O; 4/91 High-Speed 12-Bit A/D Converters With External Reference Input _ Features ♦ 12-Bit Resolution and Accuracy The MAX183/184/185 require an external -5V reference. A buffered reference input minimizes reference-current