NS 301 Search Results

Contextual Info: CYPRESS SEMICONDUCTOR Flash Erasable, Reprogrammable CMOS PAL Device DIP, LCC, and PLCC available — 7.5 ns commercial version 5 ns tco 5 ns t§ 7.5 ns tpo 133-MHz state machine — 10 ns military and industrial ver­ sions 6 ns tco 6 ns tg 10 ns tpo 110-MHz state machine

Contextual Info: ^ TTL Programmable Delay Modules Step Delay Max. Delay Output Rise Part No. ns ± ns ns ± ns time ns TTLPG301 TTLPG302 TTLPG303 TTLPG304 TTLPG305 TTLPG306 TTLPG307 TTLPG308 TTLPG309 TTLPG310 TTLPG315 TTLPG320 TTLPG325 TTLPG330 TTLPG335 TTLPG340 TTLPG345

L-SIM-30-1

Contextual Info: SIEMENS 1 M X 8-Bit Dynamic RAM Module HYM 22100S-60/-70/-80 Advanced Information • 1 048 576 words by 8-bit organization • Fast access and cycle 60 ns access time 110 ns cycle time -60 70 ns access time 130 ns cycle time (-70 80 ns access time 150 ns cycle time (-80

Contextual Info: M i i V VITELIC V53C400 HIGH PERFORMANCE, LOW POWER 4M X 1 BIT FAST PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 70/70L 80/80L 10/10L Max. RAS Access Time, tRAC 70 ns 80 ns 100 ns Max. Column Address Access Time, (tCAA) 35 ns 40 ns 50 ns Min. Fast Page Mode Cycle Time, (tpc)

416RP

Abstract: Cypress 12h6 18P8 PLDC18G8
Contextual Info: — - PLDC18G8 M CYPRESS CMOS Generic 20-Pin Programmable Logic Device Features • Fast — Commercial: tpo = 12 ns, tc o = 10 ns, ts = 10 ns — Military/Industrial: tpo = 15 ns, t c o = 12 ns, ts — 12 ns • Low power — I c e m ax* o f 110 mA • Commercial, industrial, and military

NS-346B

Abstract: 10KHZ NS-346A NS-346C NS-346D NS-346E 1MHz-1000MHz
Contextual Info: BROADBAND CALIBRATED NOISE STANDARDS 10KHZ TO 26.5GHZ DESCRIPTION BROADBAND CALIBRATED OUTPUT CHARACTERISTICS FOR USE WITH NOISE FIGURE M ETERS MODEL FREQUENCY NS-346A * 0.01-18 GHz NS-346B * 0.01-18 GHz NS-346C + 0.01-26.5 GHz NS-346D * 0.01-18 GHz NS-346E + 0.01-26.5 GHz

Contextual Info: if “ VITELIC V53C404 HIGH PERFORMANCE, LO W POWER 1 M X 4 B IT FAST PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 70/70L 80/80L 10/10L Max. RAS Access Time, tRAC 70 ns 80 ns 100 ns Max. Column Address Access Time, (tCAA) 35 ns 4 0 ns 50 ns Min. Fast Page Mode Cycle Time, (tpç)

CY7C1360A

Abstract: CY7C1362A
Contextual Info: CY7C1360A CY7C1362A 256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Features • • • • • • • • • • • • • • • • • • Fast access times: 2.5 ns, 3.0 ns, and 3.5 ns Fast clock speed: 225, 200, 166, and 150 MHz Fast OE access times: 2.5 ns, 3.0 ns, and 3.5 ns

Contextual Info: An m im y V1TELIC V53C404 HIGH PERFORMANCE, LO W POWER 1 M X 4 B IT FAST PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 7 0 /7 0 L 8 0 /8 0 L 1 0 /10L Max. RAS Access Time, tRAC 70 ns 80 ns 100 ns Max. Column Address Access Time, {tCAA) 35 ns 40 ns 50 ns Min. Fast Page Mode Cycle Time, ( t ^ )

28F128W18

Abstract: 28F320W18 28F640W18 intel DOC matrix 7x8
Contextual Info: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Preliminary Datasheet Product Features Performance — 70 ns Asynchronous reads for 32 and 64 Mbit, 90 ns for 128 Mbit — 14 ns Clock to Data Output (tCHQV) — 20 ns Page Mode Read Speed

Contextual Info: POR009 Effective: 5/11/2015 PREFERRED DISTRIBUTOR PRICE LIST PORTABLE CORD Yellow 90 Yellow 90 Yellow 105 Super Vu-Tron Supreme Gauge SOOW SJOOW SOOW SJOOW SOOW SEOOW SJEOOW 18/2 455.11 412.66 NS NS NS 455.11 412.66 18/3 590.57 484.71 618.07 506.94 NS 590.57

NS-346A

Abstract: RFN/25S 10KHZ NS-346B NS-346C NS-346D
Contextual Info: BROADBAND CALIBRATED NOISE STANDARDS 10KHZ TO 26.5GHZ ᮣ BROADBAND CALIBRATED OUTPUT CHARACTERISTICS FOR USE WITH NOISE FIGURE METERS MODEL NS-346A* NS-346B* NS-346C+ NS-346D* FREQUENCY OUTPUT ENR VSWR 0.01-5 GHz VSWR 5-18GHz .01-18 GHz .01-18 GHz .01-26.5 GHz

DITTO

Abstract: MIP103 2pg301 Power Switch 45V MIP111 MIP108 2PG302 2PG351 MIP107 MIP105
Contextual Info: Field Effect Transistors • IGBT Absolute Maxim um Ratings Application Strobo Type No. Electrical Characteristics VcES lc lc peak V ce (sat) (V) (A) (A) (V) td (on) td (off) tf (ns) (ns) (ns) 2P G 301 400 20 130 < 2.25 20 25 250 2 N T ype D47 2PG 302 400

5962-05208

Abstract: AT60142G AT60142F AT60142F-15 AT60142F-DC15M-E
Contextual Info: Features • Operating Voltage: 3.3V • Access Time: • • • • • • • • • • – 15 ns AT60142F – <15 ns (AT60142G in development, prototypes in Q4 2007) Very Low Power Consumption – Active: 650 mW (Max) @ 15 ns, 540 mW (Max) @ 25 ns

5962-05208

Abstract: AT60142FT AT60142FT-17 AT60142FT-DC17M-E 7726A-AERO-07 FP36
Contextual Info: Features • Operating Voltage: 3.3V, 5V tolerant • Access Time: • • • • • • • • • • – 17 ns – 15 ns Very Low Power Consumption – Active: 610 mW Max @ 17 ns(1), 540 mW (Max) @ 25 ns – Standby: 3.3 mW (Typ) Wide Temperature Range: -55 to +125°C

74176

Abstract: JRC FF 30 0d37 74197
Contextual Info: —158 — 74196 Presettable Decade Counter DATA IN PU TS i I I 1 CLEA R Û0 n D B ÛB C-tOCK< t CLOCK COUNT/ LOAO I OC C A Qa Qr « C A , Qa I l I I Y N LS 50 30 100 MHz 15 50 MHz 10 20 5 ns 20 30 10 ns 15 15 30 ns LOAD 20 20 5 ns DATA 15 1 151 6 ns tw tw

BR17

Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

CE22V10

Abstract: PALCE22V10-5PC PALCE22V10 PALCE22V10-10 PALCE22V10-15 PALCE22V10-25 PALCE22V10-5 PALCE22V10-7 palce programming Guide palce22v10 programming guide
Contextual Info: PALCE22V10 Flash Erasable, Reprogrammable CMOS PAL Device 5 ns tPD 181-MHz state machine Features • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (5 ns) • CMOS Flash EPROM technology for electrical erasability and reprogrammability

BR17

Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

BR17

Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

7813 Texas Instruments Transistor

Abstract: TMS320C6000 TMS320C6474 C6000 C6474 C64X DDR2-667 SPRS552H BR17
Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

transistor d880

Abstract: BR17
Contextual Info: TMS320C6474 www.ti.com SPRS552E – OCTOBER 2008 – REVISED APRIL 2010 TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

2e58

Abstract: BR17
Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

8c322

Contextual Info: PRELIMINARY SEMICONDUCTOR CY8C322 BridgeMOS Reprogrammable PAL Device Features Functional Description — Military — 20 ns tc o — 25 ns ts — 30 ns tpD Low power 55 mA max Commercial 75 mA max (Military) Battery Backup Operation — 2V data retention