NPN VCE 850 TRANSISTORS Search Results

BUV47

Abstract: BUV47A 2N2222 2N2904 BD135 BD136 BY205-400 D44H11 D45H11 2N2222 hfe
Contextual Info: BUV47, BUV47A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 9 A Continuous Collector Current ● 1000 Volt Blocking Capability SOT-93 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA

buv48 equivalent

Abstract: BUV48 BY205-400 2N2222 2N2904 BD135 BD136 BUV48A D44H11 D45H11
Contextual Info: BUV48, BUV48A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 15 A Continuous Collector Current ● 1000 Volt Blocking Capability SOT-93 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.

BUV48

Abstract: BUV48A 2N2222 2N2904 BD135 BD136 BY205-400 D44H11 D45H11
Contextual Info: BUV48, BUV48A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 15 A Continuous Collector Current ● 1000 Volt Blocking Capability SOT-93 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.

BUV47

Abstract: BUV47A rBE BD135 2N2222 2N2904 BD135 BD136 BY205-400 D44H11 D45H11
Contextual Info: BUV47, BUV47A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 9 A Continuous Collector Current ● 1000 Volt Blocking Capability SOT-93 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA

U/25/20/TN26/15/850/power transistor bd135

Contextual Info: BUV47, BUV47A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 9 A Continuous Collector Current ● 1000 Volt Blocking Capability This model is currently available, but not recommended for new designs. For more information, see http://bourns.com/data/

Contextual Info: BUV47, BUV47A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 9 A Continuous Collector Current ● 1000 Volt Blocking Capability SOT-93 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA

BUV48A

Abstract: buv48
Contextual Info: BUV48, BUV48A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 15 A Continuous Collector Current ● 1000 Volt Blocking Capability SOT-93 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.

BU808DFH

Abstract: ST2310DHI BU808DFh equivalent BU808DFI equivalent BU808DFh bu808dfi BUX98APW BUV27 BD911/BD912 electronic ballast MJE13007 ST1803DFH
Contextual Info: Power Bipolar Transistors Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions P/N NPN PNP STX112 STBV68 STBV45 STBV42 STBV32 STX13003 100 400 400 400 400 400 P/N NPN PNP BSS44 BFX34 2N5153 2N5681 2N5682 2N5415 BUY49S 2N3440 2N5416

BUV48A

Abstract: buv48
Contextual Info: BUV48, BUV48A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 15 A Continuous Collector Current ● 1000 Volt Blocking Capability This model is currently available, but not recommended for new designs. For more information, see http://bourns.com/data/

BUV47

Abstract: 2N2222 2N2904 BD135 BD136 BUV47A BY205-400 D44H11 D45H11
Contextual Info: BUV47, BUV47A NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK ● Rugged Triple-Diffused Planar Construction ● 9 A Continuous Collector Current ● 1000 Volt Blocking Capability AUGUST 1978 - REVISED MARCH 1997 SOT-93 PACKAGE

by205 diode

Abstract: 2N2222 2N2904 BY205-400 D44H11 D45H11 TIPL762 TIPL762A
Contextual Info: TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 6 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1000 Volt Blocking Capability C 2 ● 120 W at 25°C Case Temperature

by205

Abstract: BY205-400
Contextual Info: TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability ● 125 W at 25°C Case Temperature

BUV48V

Abstract: by205 diode BY205-400 diode by205 BUV48 buv48 equivalent by205 TRANSISTOR D 1978 diode by205 400 TRANSISTOR 2n2904
Contextual Info: BUV48, BUV48A NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK ● Rugged Triple-Diffused Planar Construction ● 15 A Continuous Collector Current ● 1000 Volt Blocking Capability AUGUST 1978 - REVISED MARCH 1997 SOT-93 PACKAGE

BY205-400

Abstract: TRANSISTOR D 1978 by205 by205 diode TRANSISTOR 2n2904 2N2222 2N2904 D44H11 D45H11 TIPL762
Contextual Info: TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 6 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1000 Volt Blocking Capability C 2 ● 120 W at 25°C Case Temperature

transistors tipl765A

Abstract: by205 TRANSISTOR D 1978 by205 diode 2N2222 2N2904 BY205-400 D44H11 D45H11 TIPL765
Contextual Info: TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability ● 125 W at 25°C Case Temperature

Contextual Info: TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 6 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1000 Volt Blocking Capability C 2 ● 120 W at 25°C Case Temperature

TIPL760

Abstract: 2N2222 2N2904 BY205-400 D44H11 D45H11 TIPL760A
Contextual Info: TIPL760, TIPL760A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1000 Volt Blocking Capability C 2 ● 75 W at 25°C Case Temperature

Contextual Info: TIPL761, TIPL761A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1000 Volt Blocking Capability C 2 ● 100 W at 25°C Case Temperature

TRANSISTOR D 1978

Abstract: by205 by205 diode diode by205 TRANSISTOR 2n2904 2N2222 2N2904 BY205-400 D44H11 D45H11
Contextual Info: TIPL761, TIPL761A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1000 Volt Blocking Capability C 2 ● 100 W at 25°C Case Temperature

BY205-400

Abstract: TIPL765A 2N2222 2N2904 D44H11 D45H11 TIPL765 2n2222 npn
Contextual Info: TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability ● 125 W at 25°C Case Temperature

Contextual Info: TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability ● 125 W at 25°C Case Temperature

by205

Abstract: TIPL760A TRANSISTOR D 1978 by205 diode TRANSISTOR 2n2904 2N2222 2N2904 BY205-400 D44H11 D45H11
Contextual Info: TIPL760, TIPL760A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1000 Volt Blocking Capability C 2 ● 75 W at 25°C Case Temperature

Contextual Info: TIPL760, TIPL760A NPN SILICON POWER TRANSISTORS Rugged Triple-Diffused Planar Construction 4 A Continuous Collector Current Operating Characteristics Fully Guaranteed at 100°C TO-220 PACKAGE TOP VIEW 1000 Volt Blocking Capability B 1 C 2 75 W at 25°C Case Temperature

by205

Abstract: 2N2222 2N2904 BY205-400 D44H11 D45H11 TIPL761 TIPL761A
Contextual Info: TIPL761, TIPL761A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1000 Volt Blocking Capability C 2 ● 100 W at 25°C Case Temperature