NPN TRANSISTOR IC20A Search Results

NPN TRANSISTOR IC20A Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TPCP8514		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet
TPCP8513		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8	Datasheet
TTC5810		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=1 A / hFE=400~1000 / VCE(sat)=-0.12 V / tf=180 ns / PW-Mini	Datasheet

NPN TRANSISTOR IC20A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1047A ISSUE 2 - JANUARY 1995_ _ _ Full characterised data now available ABSOLUTE MAXIMUM RATINGS. ZTX1047A UNIT V CBO 35 V C o lle c to r-E m itte r V o lta g e	OCR Scan	ZTX1047A ZTX1047A VCB-20V Ic-20A, lc-50mA, 50MHz width-300	PDF
ZTX1047A Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSU E 2 - JANUARY 1995_ ABSOLUTE M A XIM U M RATINGS. PARAMETER SYM BO L Coilector-Base Voltage ZT X 1 04 7A U N IT v CBO 35 V CoNecior-Emitter Voltage v CEO 10 V Emitter-Base Voltage	OCR Scan	ZTX1047A ZTX1047A 100nA ic-100nA 10m20V lB-20mA* lc-10mAr IC-10A, lc-20A,	PDF
Contextual Info: NPN SILICON PLANAR M EDIUM POWER HIGH GAIN TRANSISTOR ZTX1049A I S S U E 1 - J U N E 1995_ _ _ FEATU RES * V cev = 8 0 V * V e ry lo w saturation v o lta g e s * H ig h G ain * 20 A m p s p u lse current	OCR Scan	ZTX1049A D11G27	PDF
b200k Abstract: mg20Q6EK MG20Q6EK1 Contextual Info: MG20Q6EK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector Is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . High DC Current Gain	OCR Scan	MG20Q6EK1 M620Q6EK1 b200k mg20Q6EK MG20Q6EK1	PDF
Contextual Info: qg TOSHIBA ÍDISCRETE/OPTOJ9097250 TOSHIBA TOSHIBA D E ] ^ 0 ^ 7 5 5 0 DD]jb3D7 H \| 90D CDIS C R E T E /OPTO SEMICONDUCTOR 16307 DT-33-3S’ TOSHIBA GTR MODULE •MG-20Q6EK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS.	OCR Scan	DISCRETE/OPTOJ9097250 DT-33-3Sâ MG-20Q6EK1 hFEc100 MG20Q6EK1-1 TCH72SG DDlb30Ã iG20Q6F	PDF
stocko mkf Abstract: SAA4991 47 micro farad 16v electrolytic radial capacitor 78L05ACP philips Electrolytic Capacitor 100 micro farad 25v electrolytic capacitor 74HCT4066T DIODE p13 picture 74f08d philips tda9151 Contextual Info: APPLICATION NOTE Improved Picture Quality Module MK7-V1 V0.9 AN97058 Philips Semiconductors Improved Picture Quality Module MK7-V1 V0.9 Application Note AN97058 Abstract This documents describes the hardware content, the signal processing and the software control of the 100 Hz	Original	AN97058 stocko mkf SAA4991 47 micro farad 16v electrolytic radial capacitor 78L05ACP philips Electrolytic Capacitor 100 micro farad 25v electrolytic capacitor 74HCT4066T DIODE p13 picture 74f08d philips tda9151	PDF