NPN TRANSISTOR 1000V Search Results

NTE2311

Abstract: npn 1000V 15A NPN Transistor VCEO 1000V
Contextual Info: NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability: VCEX = 1000V

NPN Transistor VCEO 1000V

Abstract: 2SC2688 2SC2688L transistor T 023 XT60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES 1 * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF

2SC2688

Abstract: NPN Transistor VCEO 1000V 2SC2688L QW-R204-023 NPN SILICON TRANSISTOR
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR „ DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. „ FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF

2SC2688

Abstract: 2SC2688L NPN Transistor VCEO 1000V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES 1 * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF

2SC2688

Abstract: NPN Transistor VCEO 1000V TRANSISTOR 023
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR „ DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. „ FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF

NPN Transistor VCEO 1000V

Abstract: 1000v, NPN NTE2310 transistor VCE 1000V transistor VCEO 1000V TO218 package transistor 1000V 6A high voltage fast switching npn 4A
Contextual Info: NTE2310 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications. Absolute Maximum Ratings:

NPN Transistor VCEO 1000V

Abstract: transistor VCE 1000V
Contextual Info: NTE2313 Silicon NPN Transistor High Speed Switch Description: The NTE2313 is a high–voltage, high–speed, glass–passivated NPN power transistor in a TO220 type package designed for use in converters, inverters, switching regulators, motor control systems,

transistor VCE 1000V

Abstract: npn 1000V 15A NPN Transistor VCEO 1000V 300V transistor npn 15a
Contextual Info: NTE2333 Silicon NPN Power Transistor for Switching Power Applications Description: The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line– operated Switchmode Power supplies and electronic light ballasts. Features:

NPN Transistor VCEO 1000V

Abstract: NTE2327 250V transistor npn 2a transistor VCE 1000V
Contextual Info: NTE2327 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2327 is a silicon NPN transistor in a TO126 type package designed for use in converters, inverters, switching regulators, motor control systems and switching applications. Absolute Maximum Ratings:

NPN Transistor VCEO 1000V

Abstract: transistor BUX81/9
Contextual Info: BUX81 MECHANICAL DATA Dimensions in mm inches HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR PostScript Picture C:\GRAPHICS\TO204AA EPS Applications The BUX81 is an epitaxial silicon NPN planar transistor that has high current and high power handling capability and

Contextual Info: DISCRETE SEMICONDUCTORS DAT BUJ403A Silicon Diffused Power Transistor Product specification December 1998 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ403A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use

Contextual Info: DISCRETE SEMICONDUCTORS DAT BUJ303B Silicon Diffused Power Transistor Product specification March 2002 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for

Contextual Info: DISCRETE SEMICONDUCTORS DAT BUJ106A Silicon Diffused Power Transistor Product specification March 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ106A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use

BUJ103AX

Abstract: BP317 BU1706AX
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ403A Silicon Diffused Power Transistor Product specification December 1998 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ403A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use

BUJ204A

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for

BUJ103AX

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended

Contextual Info: DISCRETE SEMICONDUCTORS DAT BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ106A Silicon Diffused Power Transistor Product specification March 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ106A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ303B Silicon Diffused Power Transistor Product specification March 2002 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for

smps 1000W

Abstract: smps 2000W 2000w smps smps 2000W circuit 1000w smps circuits smps design 1000w 1000W mosfet SGSF663 npn 1000V 100a smps 1000w circuit
Contextual Info: 7T2‘Ï237 002122=1 ô • "T'-iV/' S G S -T H O M S O N S G S F 663 HLHOTTRMOlSi S 6 S-TH0MS0N 30E » FASTSWITCH HOLLOW-EMITTER NPN TRANSISTOR ■ HIG H S W IT C H IN G SPEED NPN POWER TRANSISTOR . HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLIC A­

NTE3104

Contextual Info: NTE3104 Opto Interrupter Module Photo Reflector, NPN Transistor Output Description: The NTE3104 is a subminiature photo reflector whose GaAs infrared emitting diode and silicon transistor are assembled in the same package allowing for easy installation and handling.

1N4148 SMD PACKAGE

Abstract: TRANSISTOR SMD CODE PACKAGE SOT23 SMD DIODE 1N4007 smd zener diode code M1 RESISTOR AXIAL 0207 FAIRCHILD 1n4007 smd diode smd zener diode code T2 smd code C2 zener diode bridge rectifier 1N4007 SMD DIODE 1N4007 DATASHEET
Contextual Info: Document reference: PCB reference: Date: March, 20 2006 STEVAL-IHT003V1 Company: STMicroelectronics Index Quantity Reference 1 1 Triac 2 1 SCR 3 1 PNP Transistor 4 1 NPN Transistor 5 1 N-Channel Transistor 6 1 Resistor 620 1/4W 1% 7 1 Resistor 470K 1/4W 1%