NPN SWITCHING TRANSISTOR IC 5A Search Results

BUX80

Contextual Info: /= 7 SGS-THOMSON ^7# IM ^m iC T[i«i] i; BUX80 HIGH VOLTAGE NPN SILICON POWER TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . FAST SWITCHING SPEED APPLICATIONS . SWITCHING REGULATORS . MOTOR CONTROL . HIGH FREQUENCY AND EFFICENCY CONVERTERS

MJE13007

Contextual Info: SEMICONDUCTOR MJE13007 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES ・Excellent Switching Times : ton=1.6 S Max. , tf=0.7μS(Max.), at IC=5A

MJE13007F

Contextual Info: SEMICONDUCTOR MJE13007F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES ・Excellent Switching Times : ton=1.6 S Max. , tf=0.7μS(Max.), at IC=5A

transistor 9747

Abstract: 9746 transistor Bc 540 BUF654
Contextual Info: Tem ic BUF654 Semiconductors Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation

Contextual Info: T e m ic BUF650 Sem iconductors Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation

IC 0116 DC

Abstract: ic 0116 ic 4440 0116 ic TS13007 TS13007CZ transistor 400V 8A HIGH CURRENT NPN SILICON TRANSISTOR
Contextual Info: TS13007 High Voltage NPN Transistor BVCEO = 400V BVCBO = 700V Ic = 8A VCE SAT , = 3V @ Ic / Ib = 8A / 2A Pin assignment: 1. Base 2. Collector 3. Emitter Features — Ordering Information Suitable for switching regulator and motor control — High speed switching

1348 transistor

Abstract: TRANSISTOR K 1507 POWER TRANSISTOR TO-220 marking A07 ITO-220 TSC148D TSC148DCI TSC148DCZ Transistor 1507 Transistor 1308
Contextual Info: TSC148D High Voltage Fast-Switching NPN Power Transistor TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE SAT Features 8A 1.5V @ IC / IB = 5A / 1A Block Diagram ● High Voltage Capability ● Very High Speed Switching

Contextual Info: SEMICONDUCTOR MJE13009 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S Max. , tf=0.7 S(Max.), at IC=8A

N15D

Abstract: ic N15d ZXT13N15DE6 ZXT13N15DE6TA ZXT13N15DE6TC DSA0037458
Contextual Info: ZXT13N15DE6 SuperSOT4 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=15V; RSAT = 29m ; IC= 5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

vbe 12v, vce 600v NPN Transistor

Abstract: 2SC3831
Contextual Info: 2SC3831 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor 1max mA VCEO 500 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 500min V 10(Pulse20) A hFE VCE=4V, IC=5A 10 to 30 IB 4 A VCE(sat) IC=5A, IB=1A 0.5max

MJE13009F

Contextual Info: SEMICONDUCTOR MJE13009F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S Max. , tf=0.7 S(Max.), at IC=8A

mje13009 equivalent

Abstract: MJE13009
Contextual Info: SEMICONDUCTOR MJE13009 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S Max. , tf=0.7 S(Max.), at IC=8A

2SC3831

Abstract: vbe 12v, vce 600v NPN Transistor transistor npn 12V 1A Collector Current
Contextual Info: 2SC3831 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor VCB=600V VCEO 500 V IEBO VEB=10V 10 V V(BR)CEO 10(Pulse20) A hFE mA 100max µA IC=25mA 500min V VCE=4V, IC=5A 10 to 30 IB 4 A VCE(sat) IC=5A, IB=1A 0.5max

KTD1937

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTD1937 EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. LAMP SOLENOID DRIVER. FEATURES • High hpE : 500~1500 Ic=lA . • Low Saturation :VcE(sat)=0.35V(Max.) (Ic=5A). MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC

KTD1937

Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTD1937 EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. LAMP SOLENOID DRIVER. FEATURES • High hFE : 500~1500 Ic=lA . • Low Saturation :VcE<sat)=0.35V(Max.) (Ic=5A). MAXIMUM RATINGS (Ta=25°C)

Contextual Info: T O SH IB A 2SC5352 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE i <;r * 3 < 51 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATIONS • • Excellent Switching Times : tr = 0.5^s Max. , tf=0.3,ys (Max.) (Ic = 5A)

MJE13007H

Abstract: MJE13007 TJ2A
Contextual Info: SEMICONDUCTOR MJE13007 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. E A R S F FEATURES P Q D B ᴌExcellent Switching Times S Max. , tf=0.7Ọ S(Max.), at IC=5A

Contextual Info: TOSHIBA 2SC5352 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5352 Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS 15.9 MAX. 03.2 ±0.2 HIGH SPEED DC-DC CONVERTER APPLICATIONS • • Excellent Switching Times : tr = 0.5//s Max. , tf=0.3,«s (Max.) (Ic = 5A)

2SC3835

Abstract: DSA0016507
Contextual Info: 2SC3835 Silicon NPN Triple Diffused Planar Transistor Switching Transistor µA V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 70(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max

2SC3834

Abstract: transistor 1022
Contextual Info: 2SC3834 Silicon NPN Triple Diffused Planar Transistor Switching Transistor 100max µA V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A

2sc3835

Contextual Info: 2SC3835 Silicon NPN Triple Diffused Planar Transistor Switching Transistor 100max µA V IEBO VEB=8V 100max µA V V V(BR)CEO IC=50mA 120min 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 70(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A

Contextual Info: TSC742 High Voltage NPN Transistor TO-220 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 420V BVCBO 1050V IC VCE SAT Features 5A 0.5V @ IC=1A, IB=0.2A Block Diagram ● High Voltage Capability ● High Switching Speed Structure ●

Contextual Info: TO SH IB A 2SC4541 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4541 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS Low Saturation Voltage : q e (s a t ) = 0-5V (Max.) (IC = 1-5A) High Speed Switching Time : tg tg = 0.5//S (Typ.)

NPN SOT23-6

Abstract: ZXT10N15DE6 ZXT10N15DE6TA ZXT10N15DE6TC DSA0037431 CM13A
Contextual Info: ZXT10N15DE6 SuperSOT 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=15V; RSAT = 50m ; IC= 4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give