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MX0912B251Y
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Rochester Electronics LLC
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MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) |
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CA3046
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Rochester Electronics LLC
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RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN |
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TTC5886A
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Toshiba Electronic Devices & Storage Corporation
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NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns |
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TTA2097
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Toshiba Electronic Devices & Storage Corporation
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PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns |
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XPQR8308QB
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Toshiba Electronic Devices & Storage Corporation
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N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL |
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XPQ1R00AQB
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Toshiba Electronic Devices & Storage Corporation
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N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL |
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