NPN PNP TRANSISTOR ARRAYS Search Results

2n2222 2n5401 2n5551

Abstract: TPQ6700 TPQA05 TPQ6502 TPQ5400 2N2907 NPN Transistor TPQ2907A TPQ3724 TPQ2221 TPQ2222
Contextual Info: SERIES TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS S PRAGUE SERIES TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. Shown are iO NPN types, 15 PNP types, and 12 NPN/PNP complementary pairs.

UNA0233

Abstract: UN233 TRANSISTOR 1502 npn
Contextual Info: Small Signal Transistor Arrays UNA0233 Silicon PNP epitaxial planar transistor 3 elements Silicon NPN epitaxial planar transistor (3 elements) Unit: mm For motor drives 12 3 • Absolute Maximum Ratings Ta = 25°C PNP NPN Overall 0.5 4 5 6 7 0.9±0.1 Symbol

GAMMA Radiation Detector

Abstract: metal detectors IC NPN PNP Transistor Arrays 5GHz PNP transistor pnp array TRANSISTOR PNP 5GHz DIELECTRICALLY ISOLATED BIPOLAR INTERSIL ISL73096RHVX pnp 8 transistor array PNP UHF transistor
Contextual Info: ISL73096RH, ISL73127RH, ISL73128RH Data Sheet December 20, 2007 Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays The ISL73096RH, ISL73127RH and ISL73128RH are radiation hardened bipolar transistor arrays. The ISL73096RH consists of three NPN transistors and two PNP

transistor marking 6c1

Contextual Info: BC846PN/UPN_BC847PN NPN/PNP Silicon AF Transistor Arrays • For AF input stage and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP transistor in one package BC846PN BC846UPN

40841

Abstract: 2158D how to control firing angle in thyristor 3096A CA3096 558 npn CA3096AE CA3096E CA3096E equivalent CA3096A
Contextual Info: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types

CA3096

Contextual Info: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types

itt 3906

Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE 2n2222 itt 741TC 2n3904, itt itt 3904 741CE 2N3799 MOTOROLA TRANSISTOR REPLACEMENT GUIDE itt 2n2222
Contextual Info: SPRflGUE "ZT SERIES TPQ QUAD TRAHSISTOR ARRAYS The Sprague Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent transistors. Shown are eight NPN types, Five PNP types, and nine NPN/PNP dual complementary pairs.

40841 MOSFET

Abstract: 2158D CA3096 CA3096E equivalent CA3096A CA3096AE 40841 dual gate mosfet CA3096AM96 CA3096C CA3096E
Contextual Info: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types

Contextual Info: BC846PN/UPN_BC847PN NPN/PNP Silicon AF Transistor Arrays • For AF input stage and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP transistor in one package • Pb-free (RoHS compliant) package

BC847PN SOT363

Abstract: BC847PN BC846PN BC846UPN SC74 marking B1 sot363 marking code e2 IC Marking AC 6 PIN
Contextual Info: BC846PN/UPN_BC847PN NPN/PNP Silicon AF Transistor Arrays • For AF input stage and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP transistor in one package • Pb-free (RoHS compliant) package 1)

993 395 pnp npn

Abstract: bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q
Contextual Info: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page General purpose amplification and switching transistors Low-power transistors 2 5 – 23 26 Transistor arrays 7 – 29 29 29 Medium-power transistors 8 9 – 30 31 10

TRANSISTOR BC 448 smd

Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
Contextual Info: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors

UNA0235

Abstract: UN235
Contextual Info: Small Signal Transistor Arrays UNA0235 Silicon PNP epitaxial planar transistor 3 elements Silicon NPN epitaxial planar transistor (3 elements) Unit: mm For motor drives For small motor drive circuits in general 12° 12 3 NPN Overall 0.8 1.5±0.1 1.5+0.2

Diode marking MFW

Abstract: MDC03 Marking TRANSISTOR 737 MFW14 transistor marking D9 common collector npn array pnp 8 transistor array transistor 736
Contextual Info: IMD9A Transistor, digitai, dual, NPN and PNP, with 2 resistors Features Dimensions Units : mm • available in SMT6 (IMD, SC-74) package • package marking: IMD9A; D9 • IMD9A (SMT6) 2 .9±0.Z package contains a PNP (DTA114YKA) and an NPN (DTC114YKA) transistor, each with

Contextual Info: Power Transistor Arrays PUB4310 PU4310 Silicon NPN/PNP planar type For power amplification Unit: mm • Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • NPN 2 elements + PNP 2 elements

PU4310

Abstract: PUB4310 103 npn
Contextual Info: Power Transistor Arrays PUB4310 PU4310 Silicon NPN/PNP planar type For power amplification Unit: mm • Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • NPN 2 elements + PNP 2 elements

Contextual Info: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> 8-UNIT 400mA DARLIGNON TRANSISTOR ARRAY DESCRIPTION M54583WP is eight-circuit collector-current sink type Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated

Contextual Info: Small Signal Transistor Arrays UNA0233 Silicon PNP epitaxial planar type 3 elements Silicon NPN epitaxial planar type (3 elements) Unit: mm For motor drives 12 3 • Absolute Maximum Ratings Ta = 25°C PNP NPN Overall 0.5 4 5 6 7 0.9±0.1 Symbol Rating Unit

M54523

Abstract: pnp 8 transistor array 18P4G 20P2N-A M54583 M54583FP M54583P 8 pin 4v power supply ic
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor

M54583FP

Abstract: pnp darlington array M54523 PNP DARLINGTON ARRAYS 18P4G 20P2N-A M54583 M54583P pnp 8 transistor array
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor

M54522

Abstract: m54566 M54566WP
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566WP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION PIN CONFIGURATION M54566WP are seven-circuit collector-current synchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor

8 pin 4v power supply ic

Abstract: Seven Transistor Array PNP M54222 M54566FP M54566P pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY PNP DARLINGTON ARRAYS
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54566P and M54566FP are seven-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor

M54522

Abstract: M54566DP Seven Transistor Array PNP m54566
Contextual Info: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54566DP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54566DP is seven-circuit collector current sink type darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated

M54583WP

Abstract: in4418
Contextual Info: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54583WP 8-UNIT 400mA DARLIGNON TRANSISTOR ARRAY DESCRIPTION M54583WP is eight-circuit collector-current sink type Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated