NPN MUTING SOT23 Search Results

75151

Abstract: 75157
Contextual Info: 50C02CH Ordering number : EN7515A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 50C02CH Low-Frequency General-Purpose Amplifier Applications Applications • Low-frequency Amplifer, high-speed switching, small motor drive, muting circuit

MB4213

Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Contextual Info: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors

Contextual Info: 15C01C Ordering number : EN7504A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 15C01C Low-Frequency General-Purpose Amplifier Applications Applications • Low-frequency Amplifier, muting circuit Features • • • • Large current capacity

NPN Silicon Epitaxial Planar Transistor

Contextual Info: MMBTRC231S.MMBTRC234S NPN Silicon Epitaxial Planar Transistor For switching, audio muting, interface circuit and driver circuit applications Collector Base R1 Emitter Absolute Maximum Ratings Ta = 25 OC Parameter SOT-23 Plastic Package Symbol Value Unit

Contextual Info: 15C01C Ordering number : EN7504A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 15C01C Low-Frequency General-Purpose Amplifier Applications Applications • Low-frequency Amplifier, muting circuit Features • • • • Large current capacity

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SD1757K Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES z Optimal for muting. 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value Unit VCBO

IC600

Abstract: NPN Silicon Epitaxial Planar Transistor
Contextual Info: MMBTRC231S NPN Silicon Epitaxial Planar Transistor For switching, audio muting, interface circuit and driver circuit applications Collector Base R1 Emitter SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage

Contextual Info: Ordering number : EN7515A 50C02CH Bipolar Transistor http://onsemi.com 50V, 0.5A, Low VCE sat NPN Single CPH3 Applications • Low-frequency Amplifer, high-speed switching, small motor drive, muting circuit Features • • • • Large current capacitance

2SD1757K

Abstract: AAs Transistor IC AAQ
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SD1757K Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES z Optimal for muting. 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value Units VCBO

KRC231S

Abstract: KRC232S KRC233S KRC234S KRC235S
Contextual Info: SEMICONDUCTOR KRC231S~KRC235S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR E B L FEATURES L 2 H A ・Simplify Circuit Design. 3 G ・With Built-in Bias Resistors. D SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.

NPN transistor marking NY

Contextual Info: SEMICONDUCTOR KRC231S~KRC235S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR E B L FEATURES L 2 H A ・Simplify Circuit Design. 3 G ・With Built-in Bias Resistors. D SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.

KTD1304

Abstract: npn epitaxial planar high voltage transistor NPN Silicon Epitaxial Planar Transistor
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High emitter-base voltage. z High reverse hFE. z Low on resistance. KTD1304 Pb Lead-free APPLICATIONS z Audio muting application. SOT-23 ORDERING INFORMATION Type No.

KTD1304

Abstract: VEBO-12V
Contextual Info: SEMICONDUCTOR KTD1304 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO MUTING APPLICATION. FEATURES ᴌHigh Emitter-Base Voltage : VEBO=12V Min. . E B L L ᴌHigh Reverse hFE ᴌLow on Resistance : RON=0.6ή(Max.) (IB=1mA). H 1 P Collector-Base Voltage

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

Contextual Info: DRC2614T Silicon NPN epitaxial planar type For digital circuits / muting Unit: mm • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: VT  Packaging

Contextual Info: Doc No. TT4-EA-12544 Revision. 2 Product Standards Transistors with Built-in Resistor DRC2614T0L DRC2614T0L Silicon NPN epitaxial planar type Unit: mm For digital circuits / Muting 2.9 0.4 • Features 0.16 3 1.5 2.8  Low collector-emitter saturation voltage Vce sat

KTC2875

Contextual Info: SEMICONDUCTOR KTC2875 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FOR MUTING AND SWITCHING APPLICATION. FEATURES ・High Emitter-Base Voltage : VEBO=25V Min. E B L L ・High Reverse hFE ・Low on Resistance : RON=1Ω(Typ.), (IB=5mA) H 1 P Collector-Base Voltage

KRC281S

Contextual Info: SEMICONDUCTOR KRC281S~KRC286S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ・High emitter-base voltage : VEBO=25V Min ・High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ・Low on resistance : Ron=1Ω(Typ.) (IB=5mA)

Contextual Info: Doc No. TT4-EA-12545 Revision. 2 Product Standards Transistors with Built-in Resistor DRC2643T0L DRC2643T0L Silicon NPN epitaxial planar type Unit: mm For digital circuits / Muting 2.9 0.4 • Features 0.16 3 1.5 2.8  Low collector-emitter saturation voltage Vce sat

hFE-150

Abstract: KTC2875
Contextual Info: SEMICONDUCTOR KTC2875 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FOR MUTING AND SWITCHING APPLICATION. FEATURES High Emitter-Base Voltage : VEBO=25V Min. E B L L High Reverse hFE 2 A H 1 P RATING UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage

KRC281S

Abstract: KRC282S KRC283S KRC284S KRC285S KRC286S
Contextual Info: SEMICONDUCTOR KRC281S~KRC286S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES E B L L High emitter-base voltage : VEBO=25V Min 2 A H With Built-in Bias Resistors. 3 G Low on resistance : Ron=1 (Typ.) (IB=5mA)

KTC2875

Contextual Info: KEC SEMICONDUCTOR KTC2875 TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE FOR MUTING AND SWITCHING APPLICATION. FEATURES • High E m itter-B ase Voltage : VEB0=25V Min. • High Reverse Ii f e : Reverse hFE=150(Typ.) (Vce=~2V, Ic=-2mA)

KTC2875

Abstract: P300 EH SOT23
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC2875 SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE FOR MUTING AND SWITCHING APPLICATION. FEATURES • High Emitter-Base Voltage : VEB0=25V Min. • High Reverse Iife : Reverse hFE=150(Typ.) (Vce=~2V, Ic=-2mA) • Low on Resistance : Ron=1£2 (Typ.), (lB=5mA)

Contextual Info: Ordering number : EN7504A 15C01C Bipolar Transistor http://onsemi.com 15V, 0.7A, Low VCE sat NPN Single CP Applications • Low-frequency Amplifier, muting circuit Features • • • • Large current capacity Low collector-to-emitter saturation voltage (resistance) RCE (sat) typ.=0.58Ω [IC=0.7A, IB=35mA]