NPN BH RE Search Results

KC156A

Abstract: ky202e K174XA2 KT809A KT805A KT610B KP350A KT808a KT920A KC213
Contextual Info: BJOJIABPHHEHKO CnPABOMHMK n o n o jiy nPOBOAHMKOBBIM nPMBOPAM H 3A aH ne 1 0 -e, nepepaöoT aH H oe KHEB «TEXHIKA* h flo n o jiH e H H o e 32.852 h2 J113 JlaBpnMenKO B. 10. J113 CnpaBOMHHK no noJiynpoBOAHHKOBbiM npnöopaM. 10-e m a., nepepaô. h A on.— K.: TexHiKa, 1984.— 424 c., hji.— BHÓjniorp.:

Contextual Info: nyNPNT^^Pibyis-i-Bh^yyz? CON NPN EPITAXIAL PLANAR TRANSISTOR a ft x m m o VHF P o w e r A m p l i f i e r A p p l i c a t i o n s • P 0 = 1 0 W M i n . ( VCC = 2 0 V , P j = 1 . 0 f f , INDUSTRIAL APPLICATIONS Unit : mm f = 2 7 0MHz ) Recommended fo r H igh G a in C la s s C Pow er

regulator BH

Abstract: BH15LB1WHFV BH28FB1WHFV BH30MA3WHFV hvsof6
Contextual Info: CMOS LDO Regulator Series for Portable Equipments Standard CMOS LDO Regulators BH □□ FB1WG series, BH□□ FB1WHFV series, BH □□ LB1WG series, BH□□ LB1WHFV series Large Current 300mA CMOS LDO Regulators BH □□ MA3WHFV Series No.09020EBT02 Description

Contextual Info: ChenYang Technologies GmbH & Co. KG CYD543 HALL-EFFECT UNIPOLAR IC SWITCHES These Hall-effect switches are monolithic integrated circuit consisting of a voltage regulator, Hall-voltage generator, differential amplifier, Schmitt trigger, temperature compensation circuit and open-collector output stage.

Contextual Info: ChenYang Technologies GmbH & Co. KG CYD3144E Hall Effect Switch ICs CYD3144E Hall-effect switch integrated circuits for high temperature operating based on Hall-effect principle, apply the semiconductor monolithic technology, which includes a voltage regulator, Hall voltage generator,

Contextual Info: ChenYang Technologies GmbH & Co. KG CYD3141E SERIES HALL-EFFECT SWITCH IC CYD3141E series Hall-effect switch integrated circuits for high temperature operating based on Hall-effect principle, apply the semiconductor monolithic technology, which includes a voltage regulator,

Contextual Info: ChenYang Technologies GmbH & Co. KG CYD3144 Hall Effect Switch ICs CYD3144E/L Hall-effect switch integrated circuits for high temperature operating based on Hall-effect principle, apply the semiconductor monolithic technology, which includes a voltage regulator, Hall voltage generator,

Contextual Info: ChenYang Technologies GmbH & Co. KG CYD3172X HALL-EFFECT SWITCH IC CYD3172X Hall effect latch IC is composed of a reverse protector, voltage regulator, Hall voltage generator, differential amplifier, Schmitt trigger and an open-collector output on a single silicon chip.

Contextual Info: ChenYang Technologies GmbH & Co. KG CYD3141E SERIES HALL-EFFECT SWITCH IC CYD3141E series Hall-effect switch integrated circuits for high temperature operating based on Hall-effect principle, apply the semiconductor monolithic technology, which includes a voltage regulator,

EB 13007

Abstract: p 13007 13007 T 13007 W 13007 TRANSISTOR E 13007 NPN Transistor 13007
Contextual Info: KSE13006/13007 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION TO-220 • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector Base Voltage : KSE13006 : KSE13007

D2382

Abstract: D2382 50 H120A 2SA15 2SA1565 2SC4049 SA15 SA156
Contextual Info: 2SA1565 2SC4049 % PNP/NPN Epitaxial Planar Silicon Transistors 2051 Switching Applications ith Bias Resistances R!=10k0, R2=47kO with 2382 Applications .Switching circuit, inverter circuit, interface circuit, driver circuit Features. .On-chip bias resistance (R1=10kohms, R2=47kohms)

Contextual Info: ChenYang Technologies GmbH & Co. KG CYD443H HALL-EFFECT SWITCH IC CYD443H Hall-effect switch integrated circuit for high temperature operating is based on Hall-effect principle and the semiconductor monolithic technology, which includes a voltage regulator, Hall voltage

TRANSISTOR bH-16

Abstract: BH-16 marking TRANSISTOR bH-10 bh16 transistor marking code 431 marking BH-10 bcp56-16t1g marking BH SOT-223 431 marking code sot BH-16 transistor
Contextual Info: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.

TRANSISTOR bH-16

Abstract: TRANSISTOR bH-10 BCP56-10T1 bh16 BH-16 SOT
Contextual Info: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.

BT 812

Abstract: V812 600/TRIAC BT 812
Contextual Info: iiivinyjibCHbift rEHEPATOPHbm tp iio h rn-11 b H M n yn b C H b iti TRIODE re H e p a T o p H b iii T p n o fl rM -11 5 npeflHa3HaneH fl/in reHepupoBaHna BbicoKOHacTOTH b ix K o n e 6 a H M M b a B T o r e H e p a T o p a x 6 e 3 B H e w H e ti 0 6 paTH 0 ii CBH3M B HenpepblBH O M pe>KMMe p a 60 Tbl M

Y92S-36

Abstract: m064b 3.5 digits lcd display tachometer H7ER OMRON H7ER OMRON sensor H7ER-NV-B
Contextual Info:
Self-powered Tachometer H7ER Subminiature Tachometers With Improved Appearance and Features
Large display with 8.6 mm 0.338 in height



Available with backlit LCD Revolutions displayed up to five digits. PNP/NPN DC voltage input available Switchable dual revolution display type

ScansU9X26

Contextual Info: iiivinyjibCHbift rEHEPATOPHbm tp iio h rn-11 b H M n yn b C H b iti TRIODE re H e p a T o p H b iii T p n o fl rM -11 5 npeflHa3HaneH fl/in reHepupoBaHna BbicoKOHacTOTH b ix K o n e 6 a H M M b a B T o r e H e p a T o p a x 6 e 3 B H e w H e ti 0 6 paTH 0 ii CBH3M B HenpepblBH O M pe>KMMe p a 60 Tbl M

NSVBCP56

Contextual Info: BCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features

Contextual Info: BCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features

RH125

Abstract: BT 812
Contextual Info: MMnyjlbCHblM rEHEPATOPHbW TPWOfl TRIODE HMny/ibCHbm reHepaTopHbiii Tpnofl ri/1-12B npeflHa3HaneH p,nn reHepMpoBaHMfl m ycmieHMH BbiC0K0H a cT O T H b ix KO/ie6aHMM b HenpepbiBHOM n nMnynbCHOM pe>KMMax npn aHOflHOti MOflynflLjMM. rH-125 The TM-12B triode is used as a RF oscillator and an

TRANSISTOR bH-16

Abstract: BH-16 transistor BCP53T1 BH bh16 transistor bh-16 BH 16 BCP56T1G BCP56T3G BH-16 SOT marking BH SOT-223
Contextual Info: BCP56T1 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features

BH15RB1WGUT

Abstract: BH25RB1WGUT BH28RB1WGUT BH33RB1WGUT
Contextual Info: CMOS LDO Regulator Series for Portable Equipments Ultra Small Package CMOS LDO Regulators BH□□RB1WGUT Series No.09020EBT03 Description The BH□□RB1WGUT series is a line of 150 mA output CMOS regulators that deliver a highly stable precision ± 1% output

BHNB1WHFV

Abstract: BH25NB1WHFV BH30NB1WHFV BH33NB1WHFV
Contextual Info: CMOS LDO Regulators for Portable Equipments 1ch 150mA CMOS LDO Regulators BH□□NB1WHFV series No.11020EBT04 ●Description The BH□□NB1WHFV series is a line of 150 mA output, high-performance CMOS regulators that deliver a high ripple rejection ratio of 80 dB Typ., 1 kHz . They are ideal for use in high-performance, analog applications and offer improved line

BH15RB1WGUT

Abstract: BH25RB1WGUT BH28RB1WGUT BH33RB1WGUT VCSP60N1
Contextual Info: CMOS LDO Regulators for Portable Equipments 1ch 150mA CMOS LDO Regulators BH□□RB1WGUT series No.11020ECT03 ●Description The BH□□RB1WGUT series is a line of 150 mA output CMOS regulators that deliver a highly stable precision ± 1% output voltage. Proprietary ROHM technology enables a small load regulation of 2 mV and a dropout voltage of 100 mV.