NPN 940 Search Results

2N3662

Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V C E (SA T ) hF E M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391

BFG135 amplifier

Abstract: BFG135 BFG135 - BFG135 MBB300
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor

BFG35

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor

BFG198

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a

PNP 2N4403

Abstract: 2N4401 2n4403 configuration 2N4403 2N4401 520 2n4401 configuration
Contextual Info: 2N4401 & 2N4403 General Purpose Switching Transistors Features: • NPN/PNP Silicon Planar Epitaxial Transistors. • General purpose Switching Applications. • 2N 4401 Type NPN. • 2N 4403 Type PNP. 2N4401 NPN TO-92 2N4403 PNP Dimensions Minimum Maximum

str 6707

Abstract: philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 1999 Apr 14 Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION NPN transistor in a TO-202 plastic package.

MID-95A3LH

Contextual Info: SIDE LOOK PACKAGE NPN PHOTOTRANSISTOR MID-95A3LH Description Package Dimensions Unit: mm inches 1.50 (.059 The MID-95A3LH is a TWIN NPN silicon phototransistor mounted in a special dark plastic side looking package and suitable for the IRED (940nm) Type.

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2933 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2933 is silicon NPN epitaxial planar type transitor specifically designed for power amplifiers in 800 ~ 940MHz band. Dimensions in mm FEATURES • High gain. High efficiency:

MID-95A3L

Abstract: twin Phototransistor
Contextual Info: SIDE LOOK PACKAGE NPN PHOTOTRANSISTOR MID-95A3L Description Package Dimensions 1.50 .059 The MID-95A3L is a TWIN NPN silicon phototransistor Unit: mm ( inches ) mounted in a special dark plastic side looking package and suitable for the IRED (940nm) Type.

94A3

Abstract: MID-94A3L
Contextual Info: SIDE LOOK PACKAGE NPN PHOTOTRANSISTOR MID-94A3L Description Package Dimensions Unit : mm The MID-94A3L is a TWIN NPN silicon phototransistor mounted in a special dark plastic side looking package and suitable for the IRED 940nm Type. 3.00 ± .08 (.118±.003)

2854K

Abstract: LA12 SLR-50HL1 SLR-50HL2 SLR-50HL3 SLR-50HL4 2854-K
Contextual Info: SLR-50HL Series NPN Photodarlington Features • Narrow receiving angle • Spectrally matched to IRED • NPN planar epitaxial process • TO-18 hermetic dome lens package • Multiple sensitivity ranges • Extended temperature range Description The SLR-50HL series consists of an NPN silicon

BF115

Abstract: BF 145 transistor transistor bf 175 transistor bf 910 transistor 115 thomson tuners C22E transistor CD 910 oscillateur V12EC
Contextual Info: BF 115 NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L The NPN plan epitaxial transistor BF 115 is intended for use in front-end and oscillatormixer stages of FM tuners and generally for all HF uses. Le transistor NPN " plan é p ita xia l" BF 115 est desti­

94A4

Abstract: MID-94A46
Contextual Info: SIDE LOOK PACKAGE NPN PHOTOTRANSISTOR Description Package Dimensions Unit : mm The MID-94A46 is a two bits NPN silicon phototransistor mounted in a special dark plastic side looking package 5.00 ± .08 3.00 ± .08 NOTE 2 and suitable for the IRED 940nm Type.

2N3704

Abstract: 2N3705 transistor 2n3704 equivalent transistor 2n3704 2N3704 transistor
Contextual Info: 2N3704 & 2N3705 General Purpose Transistor Description: • NPN Silicon Planar Epitaxial Transistors. 2N3704 NPN 2N3705 NPN TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F G H 5° 1.14 1.40 1.53

rf amplifier marking catalog

Contextual Info: Philips Semiconductors; MZ0912B50Y; NPN microwave power transistor Select your country Consumer Products Professional products Search Philips Semiconductors Home Product Information MZ0912B50Y; NPN microwave power transistor General Description Blockdiagram

740C3

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y

PDTC143XE

Abstract: PDTA143XE
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC143XE NPN resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1998 May 29 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143XE FEATURES

Philips electrolytic 106 screw

Abstract: STR aluminium electrolytic capacitor
Contextual Info: DISCRETE SEMICONDUCTORS RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 Philips Semiconductors 1997 Feb 18 PHILIPS PHILIPS Philips Semiconductors Product specification NPN microwave power transistor RX1214B350Y

Contextual Info: DISCRETE SEMICONDUCTORS DAT MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y FEATURES

339 marking code SMD transistor

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC114EEF NPN resistor-equipped transistor Preliminary specification 1998 Nov 11 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC114EEF FEATURES • Power dissipation comparable to

Contextual Info: DISCRETE SEMICONDUCTORS PDTC114TU NPN resistor-equipped transistor Preliminary specification Supersedes data of 1998 May 19 Philips Semiconductors 1999 Apr 16 PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN resistor-equipped transistor

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 15 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES

MARKING SMD pnp TRANSISTOR ec

Contextual Info: DISCRETE SEMICONDUCTORS PDTC124XEF NPN resistor-equipped transistor Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors 1999 May 18 PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN resistor-equipped transistor