NPN 41A Search Results

Contextual Info: / BD 241 • BD 2 41A ■ BD 2 41B NPN SILICON EPITAXIAL BASE POWER TRANSISTORS MICRO CASE T0-220B THE BD 241, BD 241A AND BD<241B ARE NPN SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT STAGES IN AUDIO AMPLIFIERS. THE BD 241,

TIP 42C

Contextual Info: SG S-TH O M SO N IM [im[i Sra iD(gS t i P41 a /41 b /41 c TIP42A/42B/42C COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The TIP41A, TIP41B and TIP41C are silicon epitaxial-base NPN power transistors in Jedec

TIP41

Abstract: ic 41b TIP41A equivalent TIP42/42A/42B/42C TIP41C TIP41A TIP41B tip41 Inchange semiconductor data sheet tip41 file type npn 41A
Contextual Info: Inchange Semiconductor Product Specification TIP41/41A/41B/41C Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type TIP42/42A/42B/42C APPLICATIONS ・For medium power linear switching applications PINNING PIN DESCRIPTION

tip41

Abstract: TIP41C TIP41B TIP41A tip41 transistor transistor tip41
Contextual Info: TIP41 SERIES TIP41/41A/41B/41C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO-220 • Complement to TIP42/42A/42B/42C ABSOLUTE MAXIMUM RATINGS Characteristic Collector Emitter Voltage Collector Emitter Voltage Symbol Rating

TIP41

Abstract: ic 41b TIP41C tip41 file type npn 41A TIP41B TIP41A
Contextual Info: SavantIC Semiconductor Product Specification TIP41/41A/41B/41C Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type TIP42/42A/42B/42C APPLICATIONS ·For medium power linear switching applications PINNING PIN DESCRIPTION 1 Base

of TIP41

Abstract: data transistor tip41 OF TRANSISTOR tip41 TIP41 TIP41C
Contextual Info: TIP41 SERIES TIP41/41A/41B/41C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO-220 • Complement to TIP42/42A/42B/42C ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Symbol VCBO : TIP41

LTR-3208E

Abstract: LTE-4208 T-41-45 D0-201AD LTR-3208 liteon PBPC T4145 RL- 3208 A
Contextual Info: LITE-ON INC 31E D 553b3b7 DQDiati3 S HLTN NPN T-lVd STANDARD 5<f> PHOTODETECTOR LTR-3208/3208E FEATURES • W IDE RAN G E OF CO LLECTO R • LENSED FOR HIG H S E N S IT IV IT Y • LOW COST P LA STIC PACKAGE. CURRENTS. DESCRIPTION The LTR-3208 series consist o f an NPN silicon

datasheet of TIP41

Abstract: TIP41C TIP41 SWITCHING TRANSISTOR 60V TRANSISTOR tip41c transistor TIP42 NPN Transistor VCEO 80V 100V TIP41A equivalent TIP41C EQUIVALENT ic 41b
Contextual Info: WS TIP41 SERIRES TIP41/41A/41B/41C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS •Complementary to TIP42/42A/42B/42C TO-220 C) ABSOLUTE MAXIMUM RATINGS (Ta=25°C Characteristic Collector-Base Voltage :TIP41 :TIP41A :TIP41B

Contextual Info: TIP41 SERIRES TIP41/41A/41B/41C NPN EXITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO-220 • Complement to TIP42/42AM2 B/42C ABSOLUTE MAXIMUM RATINGS (Ta=25°C ) Characteristic Collector-Base Voltage Collector-Emitter Voltage Symbol

TIP41

Abstract: TIP41A TIP41B
Contextual Info: TIP41 SERIRES TIP41/41A/41B/41C NPN EXITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS r" TO-220 • Complement to TIP42/42A/42 B/42C ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage Collector-Emitter Voltage : TIP41 : TIP41A

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TIP41/41A/41B/41C TO-220 TRANSISTOR NPN FEATURES Medium Power Linear Switching Applications 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

tip41

Abstract: TIP41C TIP41
Contextual Info: TIP41 SERIRES TIP41/41A/41B/41C NPN EXITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO-220 • Complement to TIP42/42A/42 B/42C ABSOLUTE MAXIMUM RATINGS (T,=25°C ) Characteristic Collector-Base Voltage Collector-Emitter Voltage Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TIP41/41A/41B/41C TO-220 TRANSISTOR NPN FEATURES Medium Power Linear Switching Applications 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

tip41

Abstract: TIP41C EQUIVALENT TIP41C TIP41A TIP41B
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TIP41/41A/41B/41C TO-220 TRANSISTOR NPN FEATURES Medium Power Linear Switching Applications 1. BASE 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

OF TRANSISTOR tip41

Abstract: transistor cross reference
Contextual Info: TIP41 Series TIP41/41A/41B/41C TIP41 Series(TIP41/41A/41B/41C) Medium Power Linear Switching Applications • Complement to TIP42/42A/42B/42C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

fairchild dc 41A

Contextual Info: TIP41 Series TIP41/41A/41B/41C TIP41 Series(TIP41/41A/41B/41C) Medium Power Linear Switching Applications • Complement to TIP42/42A/42B/42C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

TIP41C

Abstract: TIP41 TIP41A TIP41B tip41 transistor
Contextual Info: TIP41 Series TIP41/41A/41B/41C TIP41 Series(TIP41/41A/41B/41C) Medium Power Linear Switching Applications • Complement to TIP42/42A/42B/42C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: 41AD M , 41AC(L) Quad 2-Input NAND Gate (Open Collector) The 41AD(M) and 41AC(L) devices are bipolar, NPN, sealed junction, silicon integrated circuits. They are available in w ire-bonded, 16-pin plastic DIPs. Tw o pull-up resistors are provided on separate pins.

Contextual Info: N ANER PHILIPS/DISCRETE ESE D 1^53=131 0011721 T • BDT41F;41AF; BDT41BF;41CF T -33-0? SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. PNP complements are BDT42F, BDT42AF, BDT42BF, and BDT42CF.

Wf VQE 23 F

Abstract: WF VQE 23 E WF VQE 12 WF VQE 13 wf vqe 23 TIP42AF TIP41 41AF wf vqe 14 e TIP42CF
Contextual Info: TIP41F; 41AF TIP41BF; 41CF PHILIPS INTER N A T I O N A L SbE ]> • 711DôEb 004352b TOS ■ P H I N T~33 ~ 0 SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base.

41AE

Contextual Info: 41 AE M , 41 DR(L) Dual-Clocked, D-Type, Flip-Flop The 41AE(M) and 41DR(L) devices are bipolar, NPN, sealed junction, silicon integrated circuits. They are available in wire-bonded, 16-pin plastic DIPs. This circuit contains tw o D-Type, positive edge-triggered, TTL flipflops with clear and preset.

Contextual Info: SOT23 NPN SILICON PLANAR M ED IU M POWER TRANSISTOR ISSU E 3 - OCTOBER 1995 FEATURES * Very Low Equivalent Résistance, RCE lat 195mQ at 1A CO M PLEM EN TA RY TYPE PARTMARKING D E T A IL - FM MT591A 41A ABSOLUTE M A X IM U M RATINGS. PARAMETER SYMBOL Collector-Base Voltage

41af

Contextual Info: 41AA M , 41AF(L) Dual 8-4 Input NAND Gate The 41AA(M) and 41AF(L) devices are bipolar, NPN, sealed junction, silicon integrated circuits. They are available In wire-bonded, 16-pin plastic DIPs. Electrical Characteristics MTTL Family LTTL Family V cc « 5.0 ± 0 .5 V, T j = 0 to 8 5 " C

BD241B

Abstract: b0241b BD241 VCS-60V 80241 80241A B0241C BD241A BD241C BD242
Contextual Info: ÆàMOSPEC COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS NPN BD241 BD241A BD241B BD241C . designed for use in general purpose power amplifier and switching applications. FEATURES: * Collector-Emitter Sustaining Voltage V ceo «.»= 45V(Min - BD241.BD242