NPN 400 V 1.5 A Search Results

Contextual Info: FCX458 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)400 I(C) Max. (A)300m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)320 V(CE)sat Max. (V).2 @I(C) (A) (Test Condition)20.0m

b0951

Abstract: bu508at MJE13007 b0949 BD243B BD243C BD949 BUL45 BUV46 CD3968
Contextual Info: TO-220 Power Package Transistors NPN Maximum Ratings Type No. - ^CEfSAT) ÌV) Max ^BEiSAT) (V) Max 'c (A) c* (pF) Max e 'c (mA) VC£ e (v) 6 400 80 30 15 0.3 3 4 4 1.5 6 3 500 65 6 400 100 30 15 0.3 3 4 4 1.5 6 3 500 5 40 5 50 60 40 20 0.5 2 4 4 1 2 3 500

13003a

Abstract: 13003a TRANSISTOR 13003E 13003F 13003 13003b 13003c C13003 c13003b marking code SUs 15
Contextual Info: C13003 TO126 PLASTIC PACKAGE NPN SILICON POWER TRANSISTOR Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage SYMBOL VCBO VALUE 600 UNIT V VCEO VEBO IC 400 9.0 1.5 V V A Peak 1 ICM 3.0

Contextual Info: FCX692B Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)70 I(C) Max. (A)2 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.400 h(FE) Max. Current gain.

Contextual Info: FCX690B Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)2 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.400 h(FE) Max. Current gain.

MRF4427

Contextual Info: MRF4427 NPN SILICON RF TRANSISTOR DESCRIPTION: PACKAGE STYLE The ASI MRF4427 is Designed for General Purpose Amplifier and Oscillator in VHF and UHF applications. MAXIMUM RATINGS IC 400 mA VCEO 20 V VCBO 40 V VEBO 4.0 V PDISS 1.5 W @ TC = 25 °C TJ -65 °C to +150 °C

Contextual Info: 2SD1684 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.400

KSC5027

Abstract: power BJT KSC5345 KSE13009 KSE13007 KSE13007 equivalent BUT11 KSA1156 KSC2333 KSC2335
Contextual Info: Discrete Power BJT Switch Products VCEO V VCBO (V) VEBO (V) IC (A) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) tSTG (us) tF (us) TO-126 NPN Configuration KSC2752 400 500 7 0.5 10 20 80 0.05 - 1 2.5 1 KSC5026M 800 1100 7 1.5 20 10 40 0.1 - 2 3 0.3

2SC5063

Contextual Info: Power Transistors 2SC5063 Silicon NPN triple diffusion planar type 1.5±0.1 10.0±0.3 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 1:Base 2:Collector 3:Emitter N Type Package 3 500 V VCES 500 V VCEO 400 V Emitter to base voltage VEBO 7 V Peak collector current ICP 3

2SC5063

Contextual Info: Power Transistors 2SC5063 Silicon NPN triple diffusion planar type 1.5±0.1 10.0±0.3 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 1:Base 2:Collector 3:Emitter N Type Package 3 500 V VCES 500 V VCEO 400 V Emitter to base voltage VEBO 7 V Peak collector current ICP 3

2N7368

Abstract: 2N7373 2N7376 2N6686 2N6688 2N6678 2N6687 2N6689 2N6690 2N6691
Contextual Info: v l r II PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST LU LL _c BREAKDOWN VOLTAGES NPN SAT. V O L T A G E S M a x . ) 650 400 8 3 15 8 2N 6686 T 0 -3 260 160 8 2 10 25 100 10 2.5 1.5 2 2N 6687 TO-3 280 180 8 2 10 25 100 10 2.5 1.5 2 2N 6688 TO-3 300

2N6562

Abstract: 2N6583 2N6560 2N6512 2N6513 2N6514 2N6542 2N6543 2N6544 2N6546
Contextual Info: C 1IP 1 PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BRIEAKDOV VN V OLTAGE S NPN SAT . VO LTA GES M ax. h F: E CASE V CB V CE V EB V CE (V) 'c (A) M in . Max. >C (A) 'b (A) V CE (V) V BE (V) 2N6512 TO-3 350 300 6 3 4 10 50 4 0.8 1.5 2 2N6513 TO-3 400

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413 Silicon NPN triple diffusion planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 Unit Collector-base voltage (Emitter open) VCBO 400 V Collector-emitter voltage (Base open)

2N6673

Abstract: 2N6546 2N6560 2N6583 2N6512 2N6513 2N6514 2N6542 2N6543 2N6544
Contextual Info: H P II NPN DEVICE PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BREEAKDOV VN V OLTAGE S SAT . V O LTA GES M<ax. h F:E 'c Max. >C (A) 'b (A) V CE (V) V BE (V) CASE V CB V CE V EB VCE (V) 2N6512 TO-3 350 300 6 3 4 10 50 4 0.8 1.5 2 2N6513 TO-3 400 350

2N3633

Contextual Info: CENTRAL SEMICONDUCTOR PE § QOOOSlfl 5 | NPN METAL CAN - SATURATED SWITCH Cont'd, VCB VCE V ge hFE at •c VCE Vc e (s) a* lc 2 } fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 _ 12 12 12 - 25 15 18 18 55 i V V V min

UM9C

Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
Contextual Info: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma

MMS8050-L

Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
Contextual Info: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.

2sb834 mx

Abstract: mx 2sb834 IC LM317 CIRCUITS 2sd880 equivalent npn 400 v 1.5 a BUT11 2SA940 BD941 igo tv data sheet tip41 file type
Contextual Info: MX-MICROELECTRONICS TO-220 PACKAGE Applied widely for: • • • • TV,Av,power amplifiers power drive e.c.t. ac energy saving lights power amplifiers power switch and speedy circuits DC regulators of electronical devices and calcukators • Applied widely for TV,Av,power amplifiers power drive e.c.t. ac

mx 2sb834

Abstract: 2sb834 mx LB125 2sa940 2sc2073 MJE13005 tip41c pins tip127 data REG lm317 IC LM317 DATA SHEET 2SC2073
Contextual Info: TO-220 PACKAGE MX MICROELECTRONICS ● Applied widely for TV,Av,power amplifiers power drive e.c.t. Pd TYPE NPN *Tc= OR 25℃ W PNP 2SA940 2SC2073 2SD880 2SB834 2SD313 BD941 BD949 BD950 BU406 BUT11 BUT11A PNP NPN NPN PNP NPN NPN NPN PNP NPN NPN NPN ICBO

2n697a

Abstract: 2N497 2N498 2N656 2N657 2N696 2N697 2N698 2N699 2N699A
Contextual Info: Transistors Coni. Discrete Devices General Purpose Am plifiers E lectrical Characteristics @ 25° C M ax im um Ratings Type Polarity PD VCE VEB V o lts V o lts V o lts A m b ie n t mW V c E ( S a t ) @ I c / lß H f e >C VCB M in/M ax mA V o lts m A/m A

BSY39

Abstract: 2N697 equivalent 2N1420 equivalent BFY50 equivalent 2n697a 2n1613 equivalent 2N696 equivalent 2N1711 equivalent 2N1711 MOTOROLA 2N718 equivalent
Contextual Info: Transistors Coni. Discrete Devices General Purpose Amplifiers E lectrical Characteristics @ 25° C M ax im um Ratings Type Polarity PD VCE VEB V o lts V o lts V o lts A m b ie n t mW V c E ( S a t ) @ I c / lß H f e >C VCB M in/M ax mA V o lts m A/m A

SMD TRANSISTOR H2A NPN

Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B
Contextual Info: Semiconductor Catalog Mar. 2014 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

ZDT1049

Abstract: ZXT12N50DX NPN SOT23-6 sot23 Bipolar NPN Transistor Bipolar Transistor npn sot23 zdt705 transistor PNP 5 w ZDT751 DUAL TRANSISTOR
Contextual Info: Multichip Devices Dual Transistor Combinations Various transistor combinations have been developed to meet our customers requirements for reduced component count and smaller packaging, including dual transisitors and traditional H-bridge configurations consisting of two NPN and two

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)