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    NPN 300V Search Results

    NPN 300V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPCP8514
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TPCP8513
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet
    TTC5810
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=1 A / hFE=400~1000 / VCE(sat)=-0.12 V / tf=180 ns / PW-Mini Datasheet
    TTC019
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.21 V / tf=120 ns / PW-Mini Datasheet

    NPN 300V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR APPLICATIONS *HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS *COLOR TV HORIZ. DRIVER APPLICATIONS *COLOR TV CHROMA OUTPUT APPLICATIONS 1 FEATURES *High Voltage :V BR CEO= 300V


    Original     		2SC2482 O-92NL 100ms* 500ms* QW-R211-015 PDF

    vbe 10v, vce 500v NPN Transistor

    Abstract: transistor ignition circuit bu941
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BU941 NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM


    Original     		BU941 BU941-T3P-T BU941L-T3P-T BU941-TA3-T BU941L-TA3-T BU941-TQ2-T BU941L-TQ2-T BU941-TQ2-R BU941L-TQ2-R O-220 vbe 10v, vce 500v NPN Transistor transistor ignition circuit bu941 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM


    Original     		BU941Z BU941ZL-T3P-T BU941ZG-T3P-T BU941ZL-TA3-T BU941ZG-TA3-T BU941ZL-TQ2-T BU941ZG-TQ2-T BU941ZL-TQ2-R BU941ZG-TQ2-R O-220 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM


    Original     		BU941Z BU941ZL-T3P-T BU941ZG-T3P-T BU941ZL-TA3-T BU941ZG-TA3-T O-220 QW-R214-022. QW-R214-022 PDF

    NPN Transistor 10A 24V

    Contextual Info: UTC BU941 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES *NPN darlington *Integrated antiparallel collector-emitter diode 1 APPLICATIONS * High ruggedness electric ignitions TO-220 1: BASE 2:COLLECTOR 3: EMITTER


    Original     		BU941 O-220 QW-R203-025 NPN Transistor 10A 24V PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage


    Original     		MJE13003D-P MJE13003D-P MJE13003DL-P-x-T92-B MJE13003DG-P-x-T92-B MJE13003DL-P-x-T92-K MJE13003DG-P-x-T92-K MJE13003DL-P-x-T92-R MJE13003DG-P-xat QW-R201-085 PDF

    1A 300V TRANSISTOR

    Abstract: 300V transistor npn 2a NTE94 300V regulator TRANSISTOR 187
    Contextual Info: NTE94 Silicon NPN Transistor High Voltage Switch Description: The NTE94 is a silicon NPN transistor in a TO3 type case designed for medium to high voltage inverters, converters, regulators, and switching circuits. Features: D High Collector–Emitter Voltage: VCEO = 300V


    Original     		NTE94 NTE94 200mA, 1A 300V TRANSISTOR 300V transistor npn 2a 300V regulator TRANSISTOR 187 PDF

    BSS73

    Contextual Info: BSS73 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 300V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


    Original     		BSS73 O206AA) 10/30m 2-Aug-02 BSS73 PDF

    BFT59

    Contextual Info: BFT59 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 300V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products


    Original     		BFT59 O206AA) 10/30m 2-Aug-02 BFT59 PDF

    2N6462

    Contextual Info: 2N6462 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)


    Original     		2N6462 O205AD) 10/20m 1-Aug-02 2N6462 PDF

    2N6461

    Contextual Info: 2N6461 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)


    Original     		2N6461 O205AD) 10/20m 1-Aug-02 2N6461 PDF

    MJE13003D

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.


    Original     		MJE13003D MJE13003D MJE13003DL-T60-K MJE13003DG-T60-K O-126 QW-R204-025 PDF

    MJE13003D

    Abstract: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR *13003d
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.


    Original     		MJE13003D MJE13003D MJE13003DL-T60-K MJE13003DG-T60-K O-126 QW-R204-025 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR *13003d PDF

    MJE13003D

    Abstract: High voltage fast switching power transistor to92 300V NPN transistor to-92
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.


    Original     		MJE13003D MJE13003D MJE13003DL-x-T60-K MJE13003DG-x-T60-K MJE13003DL-x-T92-B MJE13003DG-x-T92-B MJE13003DL-x-T92-K MJE13003DG-x-T92-K MJE13003DL-x-T92-R MJE13003DG-x-T92-R High voltage fast switching power transistor to92 300V NPN transistor to-92 PDF

    BFT49

    Contextual Info: BFT49 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016) 0.53 (0.021)


    Original     		BFT49 O205AD) 10/30m 1-Aug-02 BFT49 PDF

    PO39

    Contextual Info: PO39 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016) 0.53 (0.021)


    Original     		O205AD) 1-Aug-02 PO39 PDF

    MJE13009d

    Abstract: 1A 300V TRANSISTOR MJE13009-D
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13009D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13009D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability.


    Original     		MJE13009D MJE13009D QW-R203-041 1A 300V TRANSISTOR MJE13009-D PDF

    NTE154

    Contextual Info: NTE154 Silicon NPN Transistor High Voltage Video Output Description: The NTE154 is a silicon NPN transistor in a TO39 type package designed for use as a video output to drive a color CRT. Features: D High Voltage: VCEO = 300V Min @ IC = 5mA D Low Capacitance: Cob = 3pF Max @ VCB = 20V


    Original     		NTE154 NTE154 50MHz 20MHz 20MHz, 500mV PDF

    mje13009l

    Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They


    Original     		MJE13009 MJE13009 QW-R214-011 mje13009l PDF

    mje13009 equivalent

    Abstract: 2N2222 SOA mje13009l MJE13009L-T3P-T QW-R214-011 2n2222 transistor pin b c e 3V to 350V dc dc converter MJE13009-T3P-T 2N2222 transistor output curve free transistor and ic equivalent data
    Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They


    Original     		MJE13009 MJE13009 MJE13009L QW-R214-011 mje13009 equivalent 2N2222 SOA mje13009l MJE13009L-T3P-T 2n2222 transistor pin b c e 3V to 350V dc dc converter MJE13009-T3P-T 2N2222 transistor output curve free transistor and ic equivalent data PDF

    MJE13004

    Abstract: mje13005 equivalent mje13005 application notes MJE13005
    Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN PLASTIC POWER TRANSISTORS MJE13004 MJE13005 TO-220 Plastic Package Switchmode Series NPN Silicon Power Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Sustaining Voltage


    Original     		ISO/TS16949 MJE13004 MJE13005 O-220 C-120 MJE13004 MJE13005Rev240402E mje13005 equivalent mje13005 application notes MJE13005 PDF

    300V transistor npn 2a

    Abstract: 300V switching transistor NPN Transistor 10A 400V TIP151 Diode 400V 1.5A NPN Transistor 1.5A 400V NPN Transistor 10A 400V to 92 tip152 TRANSISTOR VCE 400V 500mA TIP150
    Contextual Info: TIP150, TIP151, TIP152 Silicon NPN Power Darlington Transistor Description: The TIP150, TIP151, and TIP152 are silicon NPN power Darlington transistors in a TO220 type package designed for use in automotive ignition, switching, and motor control applications.


    Original     		TIP150, TIP151, TIP152 TIP152 TIP150) TIP151) TIP152) TIP150 300V transistor npn 2a 300V switching transistor NPN Transistor 10A 400V TIP151 Diode 400V 1.5A NPN Transistor 1.5A 400V NPN Transistor 10A 400V to 92 TRANSISTOR VCE 400V 500mA TIP150 PDF

    mje13003 equivalent

    Contextual Info: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		MJE13003 QW-R201-062 mje13003 equivalent PDF

    Contextual Info: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		MJE13003 QW-R201-062 PDF