Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NPN 300V Search Results

    NPN 300V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPCP8514
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TPCP8513
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet
    TTC5810
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=1 A / hFE=400~1000 / VCE(sat)=-0.12 V / tf=180 ns / PW-Mini Datasheet
    TTC019
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.21 V / tf=120 ns / PW-Mini Datasheet

    NPN 300V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR APPLICATIONS *HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS *COLOR TV HORIZ. DRIVER APPLICATIONS *COLOR TV CHROMA OUTPUT APPLICATIONS 1 FEATURES *High Voltage :V BR CEO= 300V


    Original     		2SC2482 O-92NL 100ms* 500ms* QW-R211-015 PDF

    BU941

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BU941 NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM


    Original     		BU941 BU941L-T3P-T BU941G-T3P-T BU941L-TA3-T BU941G-TA3-T BU941L-TQ2-T BU941G-TQ2-T BU941L-TQ2-R BU941G-TQ2-R O-220 BU941 PDF

    vbe 10v, vce 500v NPN Transistor

    Abstract: transistor ignition circuit bu941
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BU941 NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM


    Original     		BU941 BU941-T3P-T BU941L-T3P-T BU941-TA3-T BU941L-TA3-T BU941-TQ2-T BU941L-TQ2-T BU941-TQ2-R BU941L-TQ2-R O-220 vbe 10v, vce 500v NPN Transistor transistor ignition circuit bu941 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM


    Original     		BU941Z BU941ZL-T3P-T BU941ZG-T3P-T BU941ZL-TA3-T BU941ZG-TA3-T BU941ZL-TQ2-T BU941ZG-TQ2-T BU941ZL-TQ2-R BU941ZG-TQ2-R O-220 PDF

    hFE-100

    Abstract: NPN Transistor 10A 24V utc 1018 5v 10a dc driver ic NPN power Transistor 10A 24V hFE100 VCE-500V npn high voltage transistor 500v 8a 24v switching transistor transistor ignition circuit bu941
    Contextual Info: UTC BU941 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES *NPN darlington *Integrated antiparallel collector-emitter diode APPLICATIONS TO-3P * High ruggedness electric ignitions 1: BASE 2:COLLECTOR 3: EMITTER


    Original     		BU941 QW-R214-004 hFE-100 NPN Transistor 10A 24V utc 1018 5v 10a dc driver ic NPN power Transistor 10A 24V hFE100 VCE-500V npn high voltage transistor 500v 8a 24v switching transistor transistor ignition circuit bu941 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM


    Original     		BU941Z BU941ZL-T3P-T BU941ZG-T3P-T BU941ZL-TA3-T BU941ZG-TA3-T O-220 QW-R214-022. QW-R214-022 PDF

    NPN Transistor 10A 24V

    Contextual Info: UTC BU941 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES *NPN darlington *Integrated antiparallel collector-emitter diode 1 APPLICATIONS * High ruggedness electric ignitions TO-220 1: BASE 2:COLLECTOR 3: EMITTER


    Original     		BU941 O-220 QW-R203-025 NPN Transistor 10A 24V PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD D4120P Preliminary NPN SILICON TRANSISTOR MEDIUM VOLTAGE FAST-SWITCHING NPN TRANSISTOR „ DESCRIPTION The UTC D4120P is a medium voltage fast-switching NPN power transistor. It is characterized by medium breakdown voltage, high


    Original     		D4120P D4120P D4120PL-T92-B D4120PG-T9s PDF

    D4120PL

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD D4120P Preliminary NPN SILICON TRANSISTOR MEDIUM VOLTAGE FAST-SWITCHING NPN TRANSISTOR „ DESCRIPTION The UTC D4120P is a medium voltage fast-switching NPN power transistor. It is characterized by medium breakdown voltage, high


    Original     		D4120P D4120P D4120PL-T92-B D4120PG-T92-B QW-R201-084 D4120PL PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage


    Original     		MJE13003D-P MJE13003D-P MJE13003DL-P-x-T92-B MJE13003DG-P-x-T92-B MJE13003DL-P-x-T92-K MJE13003DG-P-x-T92-K MJE13003DL-P-x-T92-R MJE13003DG-P-xat QW-R201-085 PDF

    mje13008

    Abstract: C735
    Contextual Info: MJE13008 NPN POWER TRANSISTORS 300 VOLTS 12 AMP, 100 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. NPN COLLECTOR Features: • VCEO sus = 300V (Min). • VCEV = 600V blocking capability


    OCR Scan     		MJE13008 mje13008 C735 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.


    Original     		MJE13003D MJE13003D MJE13003DL-x-TA3-T MJE13003DG-x-TA3-T MJE13003DL-x-T60-K MJE13003DG-x-T60-K MJE13003DL-x-T92-B MJE13003DG-x-T92-B MJE13003DL-x-T92-K QW-R204-025 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.


    Original     		MJE13003D MJE13003D MJE13003DL-x-T60-K MJE13003DG-x-T60-K MJE13003DL-x-T92-B MJE13003DG-x-T92-B MJE13003DL-x-T92-K MJE13003DG-x-T92-K MJE13003DL-x-T92-R QW-R204-025 PDF

    1A 300V TRANSISTOR

    Abstract: 300V transistor npn 2a NTE94 300V regulator TRANSISTOR 187
    Contextual Info: NTE94 Silicon NPN Transistor High Voltage Switch Description: The NTE94 is a silicon NPN transistor in a TO3 type case designed for medium to high voltage inverters, converters, regulators, and switching circuits. Features: D High Collector–Emitter Voltage: VCEO = 300V


    Original     		NTE94 NTE94 200mA, 1A 300V TRANSISTOR 300V transistor npn 2a 300V regulator TRANSISTOR 187 PDF

    BSS73

    Contextual Info: BSS73 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 300V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


    Original     		BSS73 O206AA) 10/30m 2-Aug-02 BSS73 PDF

    BFT59

    Contextual Info: BFT59 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 300V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products


    Original     		BFT59 O206AA) 10/30m 2-Aug-02 BFT59 PDF

    Contextual Info: BSS73 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 300V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


    Original     		BSS73 O206AA) 10/30m 16-Jul-02 PDF

    Contextual Info: 2N5663 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)


    Original     		2N5663 O205AD) 17-Jul-02 PDF

    BSS73

    Contextual Info: BSS73 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 300V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


    Original     		BSS73 O206AA) 10/30m 19-Jun-02 BSS73 PDF

    2N6462

    Contextual Info: 2N6462 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)


    Original     		2N6462 O205AD) 10/20m 1-Aug-02 2N6462 PDF

    2N6461

    Contextual Info: 2N6461 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)


    Original     		2N6461 O205AD) 10/20m 1-Aug-02 2N6461 PDF

    2N5252

    Contextual Info: 2N5252 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)


    Original     		2N5252 O205AD) 1-Aug-02 2N5252 PDF

    2N5663

    Contextual Info: 2N5663 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)


    Original     		2N5663 O205AD) 1-Aug-02 2N5663 PDF

    MJE13003D

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.


    Original     		MJE13003D MJE13003D MJE13003DL-T60-K MJE13003DG-T60-K O-126 QW-R204-025 PDF