NPN, TRANSISTOR, SC 107 B Search Results
NPN, TRANSISTOR, SC 107 B Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 |
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BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B |
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54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| ICL7667MJA |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| 93L422ADM/B |
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93L422A - 256 x 4 TTL SRAM |
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| 27S185DM/B |
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27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 |
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NPN, TRANSISTOR, SC 107 B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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bc 303 transistor
Abstract: BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107 bc 107 npn transistor BC 108 transistor BC107 BC109
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Transistor BFX 90
Abstract: transistor bfx 73 BFX 514 BFX89 b 514 transistor
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23ShQS Q62702-F296 Transistor BFX 90 transistor bfx 73 BFX 514 BFX89 b 514 transistor | |
bf433
Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68
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MRF681 bf433 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68 | |
TRANSISTOR BC 137
Abstract: TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107
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023SbGS BC107, BC1071Â Q62702-C680 Q60203-X107-A Q60203-X107-B Q60203-X108 BC108 Q60203-X108-A Q60203-X108-B TRANSISTOR BC 137 TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107 | |
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Contextual Info: ESC D • ûS35bOS Q0Q47SÔ 7 * S I E G ^ NPN Silicon RF Broadband Transistor BFW 30 Not for new design SIEMENS AK TIEN GE SE LL SC HA F BFW 30 is an epitaxial NPN silicon planar RF transistor in a TO 72 case 18 A 4 DIN 41876 , designed for universal application up to the GHz range, e. g. for vertical amplifiers |
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S35bOS Q0Q47SÔ Q62702-F320 | |
transistor k 425
Abstract: sc 107 transistor npn, transistor, sc 107 b BU522 transistor transistor 0190 C107M BU522 BU522B 221A-04 BU522A
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r-33-73 BU522 BU522A BU522B BU522) BU522A) BU522B) BU522A, transistor k 425 sc 107 transistor npn, transistor, sc 107 b BU522 transistor transistor 0190 C107M BU522 BU522B 221A-04 BU522A | |
CAP M5E
Abstract: M559 M559-02 M559-01
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M559-01 MS59-02 M559-02 M559-02 Mil-Std-750, CAP M5E M559 | |
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Contextual Info: Who HEW LAR ETDT mL'fiIM PACK Low Current, High Perform ance NPN Silicon Bipolar Transistor Technical Data AT-32063 F eatures Description • High Perform ance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains tw o high |
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AT-32063 OT-363 AT-32063 OT-363 5965-1234E 5965-8921E 4447SA4 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN5311DW1T1G Series The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network |
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LMUN5311DW1T1G LMUN5311DW1T1G | |
BC327 BC337 noise figure
Abstract: BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212
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M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 BC327 BC337 noise figure BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212 | |
2N3906 Darlington transistor
Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
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M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 2N3906 Darlington transistor BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212 | |
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Contextual Info: 2SDÌ792 TP7L20 NPN jf— |js . NPN Darlington Transistor \ H iS 3 Outline Dim ensions 4.6 ±0- F'(ffi[§lS& Equivalent Circuit 2.7±o.z qC 0.7±o^ Bo- Unit I mm Case ! ÌTO-220 M/VV-MA/V- ~4kn ~200n i E A b so lu te Max. R a tin g s « S aa SC *=* 77 S ym bol |
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TP7L20) O-220 DDG147Q 2SD1792 | |
lt 5237
Abstract: 2N5390
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2N5390 lt 5237 | |
sot303Contextual Info: Wfiït mitÍM HP AECWKLAERTDT Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • Amplifier Tested 900 MHz Performance: 1.3 dB NF, |
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AT-32063 OT-363 vailable111 OT-363 5665-1234E sot303 | |
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2n3054aContextual Info: m 2N3054A \ \ SILICON NPN POWER TRANSISTOR D E SC R IP T IO N : The 2N3054A is a Medium Power Transistor for General Purpose Switching and Amplifier Applications M A XIM U M R A T IN G S 4.0 A 10 A PEAK lc V INCHES 55 V ce 75 W @ Tc = 25 °C P diss -65 °C to +200 °C |
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2N3054A 2N3054A | |
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Contextual Info: W529XX U'inbond Etectronics Corp. ADPCM VOICE SYNTHESIZER PowerSpeech If GENERAL DESCRIPTION The W529XX family comprises 4-bit ADPCM and 8-bit PCM voice synthesizers that provide basic PowerSpeech instructions and a number of more powerful commands, which include basic ALU |
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W529XX W529XX W52904, W52905, W52906, W52910, W52915, W52920. W52902 | |
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Contextual Info: M M O T O R O L A — — — M C33077 Dual, Low Noise O perational A m plifier The MC33077 is a precision high quality, high frequency, low noise monolithic dual operational amplifier employing innovative bipolar design techniques. Precision matching coupled with a unique analog resistor trim |
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C33077 MC33077 b3b72S3 | |
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Contextual Info: MOTOROLA MC33077 SEMICONDUCTOR TECHNICAL DATA Dual, Low Noise Operational Amplifier The M C33077 is a precision high quality, high frequency, low noise monolithic dual operational am plifier em ploying innovative bipolar design techniques. Precision matching coupled with a unique analog resistor trim technique is used |
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MC33077 C33077 | |
PJ 0349
Abstract: PJ 2399 0709s
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AT-41532 SC-70 OT-323) OT-323 SC-70) 1-800-Z35-031Z 5965-6167E PJ 0349 PJ 2399 0709s | |
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Contextual Info: What HEWLETT 1 "KM PACK ARD General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • G eneral P urpose NPN B ipolar T ran sistor O ptim ized for Low C urrent, Low V oltage A p p lications at 900 MHz, 1.8 GHz, and 2.4 GHz |
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AT-41532 OT-323 SC-70 OT-323) 5965-6167E | |
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Contextual Info: Order this document by MRF949T1/D MRF949T1 NPN Silicon Low Noise Transistors LOW NOISE TRANSISTORS Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well suited for low voltage wireless applications. This device features a 9.0 GHz |
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MRF949T1/D MRF949T1 MRF949 MRF949T1/D | |
200E
Abstract: MRF1047 MRF1047T1
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MRF1047T1/D MRF1047T1 MRF1047T1 200E MRF1047 | |
200E
Abstract: MRF1047 MRF1047T1
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MRF1047T1/D 03AUG01 26MAR02 200E MRF1047 MRF1047T1 | |
NSVMUN5333
Abstract: SMUN5311DW1T1G NSVMUN5333DW1T1G Transistor BFR 93
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MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1GSeries MUN5311DW1T1G OT-363 MUN5311DW1T1/D NSVMUN5333 SMUN5311DW1T1G NSVMUN5333DW1T1G Transistor BFR 93 | |