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    NPN, TRANSISTOR, SC 107 B Search Results

    NPN, TRANSISTOR, SC 107 B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    ICL7667MJA
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    27S185DM/B
    Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 PDF Buy

    NPN, TRANSISTOR, SC 107 B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    bc 303 transistor

    Abstract: BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107 bc 107 npn transistor BC 108 transistor BC107 BC109
    Contextual Info: * B C 107 * BC 108 BC 109 \IPN SILICON TRANSISTORS, EPITAXIAL PLANAR rRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX Jompl. of BC 177, BC 178, BC 179 îfc Preferred device Dispositif recommandé The NPN "plan epitaxial" transi ton BC 107, 3C 108 and BC 109 are intended for use in


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    npn, transistor, sc 107 b

    Abstract: motorola automotive transistor sc 107 transistor mj10012 motorola mj10012
    Contextual Info: MOTOROLA Order this document by MJ10012/D SEMICONDUCTOR TECHNICAL DATA M J10012 M JH 10012 NPN Silicon Power Darlington Transistor The MJ10012 and MJH10012 are high-voltage, high-current Darlington transistors designed for automotive ignition, switching regulator and motor control applications.


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    MJ10012/D MJ10012 MJH10012 J10012 340D-01 O-218 npn, transistor, sc 107 b motorola automotive transistor sc 107 transistor mj10012 motorola PDF

    Transistor BFX 90

    Abstract: transistor bfx 73 BFX 514 BFX89 b 514 transistor
    Contextual Info: 2SC D • û23ShQS 000474^ 4 W S I E ù NPN Silicon Transistor for RF Broadband Amplifier T ~ Z 'tï BFX 89 -SIEMENS AKTIEN GE SE LL SC HA F BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general


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    23ShQS Q62702-F296 Transistor BFX 90 transistor bfx 73 BFX 514 BFX89 b 514 transistor PDF

    bf433

    Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68
    Contextual Info: MOTOROLA SC XSTR S/R F MbE » • b3b?ES4 OQTSGS^ *1 I noTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Th« RF Line NPN Silico n RF Low Pow er Transistor 'European Part Number lc - 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz.


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    MRF681 bf433 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68 PDF

    TRANSISTOR BC 137

    Abstract: TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107
    Contextual Info: 2SC D • 023SbGS 00Q40ÔC1 T ■ S I E G ^ r NPN Silicon Transistors _ T -a f-V f SIEMENS AKTIEN G ESELLSCHA F IC 107 J C 108 BC 10g B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case 18 A 3 DIN 41876 . The collector is electrically connected to the case.


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    023SbGS BC107, BC1071Â Q62702-C680 Q60203-X107-A Q60203-X107-B Q60203-X108 BC108 Q60203-X108-A Q60203-X108-B TRANSISTOR BC 137 TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107 PDF

    npn, transistor, sc 107 b

    Abstract: transistor TIP 31A TIP 31a Transistor tip31a TIP32 NPN Transistor tip 31A 31076 TIP 133 transistor
    Contextual Info: MO TO RO LA SC XSTRS/R F 12E D | b3b?ES4 aOflSSlô =1 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP31 TIP31A T1P31B TIP31C TIP32 TIP32A TIP32B TIP32C POWER TRANSISTORS COMPLEMENTARY SILICON . . . designed for use in general purpose amplifier and switching applications.


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    TIP31 TIP31A T1P31B TIP31C TIP32 TIP32A TIP32B TIP32C TIP31B npn, transistor, sc 107 b transistor TIP 31A TIP 31a Transistor TIP32 NPN Transistor tip 31A 31076 TIP 133 transistor PDF

    Contextual Info: ESC D • ûS35bOS Q0Q47SÔ 7 * S I E G ^ NPN Silicon RF Broadband Transistor BFW 30 Not for new design SIEMENS AK TIEN GE SE LL SC HA F BFW 30 is an epitaxial NPN silicon planar RF transistor in a TO 72 case 18 A 4 DIN 41876 , designed for universal application up to the GHz range, e. g. for vertical amplifiers


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    S35bOS Q0Q47SÔ Q62702-F320 PDF

    BUS36

    Abstract: BUS37 BUS37 MOTOROLA transistor 3-440 MARK B3L
    Contextual Info: M O T O R O L A SC -CXSTRS/R F} I" ' 6367254 MOTÖ RO LA D^|t,3b7ESM SC' X S T R S / R F 96D -80706 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 12 A M PER ES SWITCHMODE llA SERIES NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS The BU S36 and BUS37 transistors are designed for low voltage,


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    BUS37 BUS36 BUS37 MOTOROLA transistor 3-440 MARK B3L PDF

    transistor k 425

    Abstract: sc 107 transistor npn, transistor, sc 107 b BU522 transistor transistor 0190 C107M BU522 BU522B 221A-04 BU522A
    Contextual Info: MOTOROLA SC XSTRS/R F 12E I b3b75SM Q0fl4fl22 7 | BU522 BU522A BU522B MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH V O LTA G E SILICON POWER DARLINGTO NS 7 AMPERES Power Transistor mainly intended for use as ignition circuit output transistor. DARLINGTON T R IPLE D IFFU SED


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    r-33-73 BU522 BU522A BU522B BU522) BU522A) BU522B) BU522A, transistor k 425 sc 107 transistor npn, transistor, sc 107 b BU522 transistor transistor 0190 C107M BU522 BU522B 221A-04 BU522A PDF

    BFQ60

    Abstract: BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2
    Contextual Info: 2SC D m fl23Sb05 QQQ4b43 T H S I E G — *- — — • » « * w r i u u _ Low Noise NPN Silicon Microwave Transistor BFQ 60 up to 2 GHz_T ?sr. D '7 ^ 3 / - < 3 3 _ SIEMENS AKTIENGESELLSCHAF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal


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    fl23Sb05 QQ04b43 -TZ3/-33_ Q62702-F655 fl23SbOS BFQ60 BFQ60 BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2 PDF

    CAP M5E

    Abstract: M559 M559-02 M559-01
    Contextual Info: M OT OR OL A 6367254 SC -CXSTRS/R MOTOROLA SC Fï Tt. XSTRS/R D Ë J b3b?2S4 ODÖ2414 96D 8 2 4 1 4 F 4 J ~ D'T A 3 ~ ^ b M A X IM U M RATINGS Symbol Value U nit v CEO 50 Vdc Collector-Base Voltage VCB 75 Vdc Emitter-Base Voltage VEB 6.0 Vdc 'C 800 mAdc


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    M559-01 MS59-02 M559-02 M559-02 Mil-Std-750, CAP M5E M559 PDF

    Contextual Info: Who HEW LAR ETDT mL'fiIM PACK Low Current, High Perform ance NPN Silicon Bipolar Transistor Technical Data AT-32063 F eatures Description • High Perform ance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains tw o high


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    AT-32063 OT-363 AT-32063 OT-363 5965-1234E 5965-8921E 4447SA4 PDF

    Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN5311DW1T1G Series The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network


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    LMUN5311DW1T1G LMUN5311DW1T1G PDF

    BC327 BC337 noise figure

    Abstract: BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212
    Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 http://onsemi.com 6 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11


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    M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 BC327 BC337 noise figure BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212 PDF

    Contextual Info: 2SDÌ792 TP7L20 NPN jf— |js . NPN Darlington Transistor \ H iS 3 Outline Dim ensions 4.6 ±0- F'(ffi[§lS& Equivalent Circuit 2.7±o.z qC 0.7±o^ Bo- Unit I mm Case ! ÌTO-220 M/VV-MA/V- ~4kn ~200n i E A b so lu te Max. R a tin g s « S aa SC *=* 77 S ym bol


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    TP7L20) O-220 DDG147Q 2SD1792 PDF

    lt 5237

    Abstract: 2N5390
    Contextual Info: TYPE 2N5390 N-P-N DARLINGTON-CONNECTED PLANAR SILICON POWER TRANSISTOR • Very High Gain — 1000 Min at 5 A • High-Speed Switching — 0.3 ¡j . s Typ ton | 3 h> Z “ 55 p ° ‘ d e v ic e sc h e m a tic o * m e c h a n ic a l d a t a 5 'a b s o l u t e m a x im u m r a t in g s a t 2 5 ° C c a se t e m p e r a t u r e u n le ss o th e r w is e n o te d


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    2N5390 lt 5237 PDF

    Contextual Info: < > M O TO R O LA — — MC33077 Dual, Low Noise Operational Am plifier The MC33077 is a precision high quality, high frequency, low noise monolithic dual operational amplifier employing innovative bipolar design techniques. Precision matching coupled with a unique analog resistor trim


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    MC33077 MC33077 PDF

    mc33077

    Contextual Info: M M O T O R O L A M C33077 Dual, Low Noise O perational A m plifier The M C33077 is a precision high quality, high frequency, low noise m onolithic dual operational am plifier employing innovative bipolar design techniques. Precision matching coupled with a unique analog resistor trim


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    MC33077 C33077 PDF

    sot303

    Contextual Info: Wfiït mitÍM HP AECWKLAERTDT Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • Amplifier Tested 900 MHz Performance: 1.3 dB NF,


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    AT-32063 OT-363 vailable111 OT-363 5665-1234E sot303 PDF

    npn pnp transistor bipolar cross reference

    Abstract: PN diode pnp low power fast switching transistor high voltage fast switching npn transistor npn, transistor, sc 109 C Field Effect Transistor pnp pn junction diode Solitron Devices pnp, 200 V, 20A
    Contextual Info: sjfnlitrnn_ a tm , C H IP D E S C R IP T IO N & P E R F O R M A N C E C U R V E S Devices. Inc. Chip Type Index. .l


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    transistor MRF 254

    Abstract: MRF561 Motorola transistors M 724 MRF560 724 motorola NPN Transistor R/High frequency MRF transistor case 317-01 317A-01 High frequency MRF transistor k 724
    Contextual Info: MOTOROLA SC -CXSTRS/R 34 F> DËJfa3fci7SS4 □D41Dflb b | _ T ' l t - t l MRF560 MRF561 MRF562 MRF563 MRFC592 The R F Line A d v a n c e Information NPN SILICON HIGH FREQUENCY TRANSISTORS The MRF560 series transistors use the same state-of-the art microwave transistor chip which features fine-line geometry, ionimplanted arsenic emitters and gold top metalization. These tran­


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    D41Dflb MRF560 MRF561 MRF562 MRF563 MRFC592 MRF560 MRF561 transistor MRF 254 Motorola transistors M 724 724 motorola NPN Transistor R/High frequency MRF transistor case 317-01 317A-01 High frequency MRF transistor k 724 PDF

    MC33077

    Abstract: 33077D
    Contextual Info: M ^ MOTOROLA — MC33077 Dual, Low N oise Operational Am plifier The MC33077 is a precision high quality, high frequency, low noise monolithic dual operational am plifier em ploying innovative bipolar design techniques. Precision matching coupled with a unique analog resistor trim


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    MC33077 MC33077 33077D PDF

    Microlab FXR

    Abstract: BF431L MRF9011 MRF9011L SF-31N microlab tuner SF
    Contextual Info: MOTOROLA SC XSTRS/R F MbE D • b3b7254 DORSOb'i 1 ■ N O T b MOTOROLA T - 'S H l ■ I SE M IC O N D U C T O R TECHNICAL DATA M RF 9011L BF431L* The RF Line N P N S ilic o n H igh -F re q u e n cy T ra n sisto r 'E u ro p e an Part Num ber . designed primarily for use in high-gain, low-noise small-signal amplifiers for


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    b3b7254 T-51-H OT-143 3ISA-05, Microlab FXR BF431L MRF9011 MRF9011L SF-31N microlab tuner SF PDF

    MRF904

    Contextual Info: HOTOROLA SC XSTRS/R F 4bE T> b3b?25M DOIMiaS 4 MOTOROLA • SEM ICONDUCTOR TECHNICAL DATA MRF904 The RF Line NPN SIUCON HIGH-FREQUENCY TRANSISTOR . . . designed for use as low-noise, high-gain, general purpose amplifiers. High Current-Gain — Bandwidth Product —


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    MIL-S-19500 MRF904HX, MRF904HXV MRF904 llec33 MRF904 PDF