NOR FLASH 1.8V Search Results

SAMSUNG MCP

Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Contextual Info: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)

IC SEM 2005

Abstract: Toshiba NOR FLASH diode m7 toshiba nor flash
Contextual Info: Part Number Reference Guide for Toshiba NOR Flash Products April 2005 TOSHIBA CORPORATION Semiconductor Company Memory Division Mobile Memory Marketing & Promotion 1 Copyright 2005 Toshiba Corporation. All rights reserved. Part Number Reference Guide for Toshiba NOR Flash

BA961

Abstract: BA43 48FBGA samsung nor flash ba107
Contextual Info: K8D6x16UTM / K8D6x16UBM NOR FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1

BA204

Abstract: ba148 BA238 SAMSUNG MCP BA167 MCP MEMORY BA262 BA259 UtRAM Density BA153
Contextual Info: Preliminary MCP MEMORY KBF0x0800M Document Title Multi-Chip Package MEMORY 128M Bit 8Mx16 Synchronous Burst , Multi Bank NOR Flash *2 / 64M Bit(4Mx16) Synchronous Burst UtRAM *2 Revision History Revision No. History 0.0 Draft Date Initial Draft (128M NOR Flash M-die_rev0.7)

NOR Flash

Abstract: FLASH NOR 64mb 512MB NOR FLASH MCP market "NOR Flash" 512MB 1GB EASY BGA NOR FLASH ST nor flash 130nm
Contextual Info: NOR Flash memories Advanced solutions for wireless applications STMicroelectronics is acknowledged as a leading supplier of the most advanced and competitive memory products available. The NOR Flash range is part of this offering, developed to meet the growing demands of the latest wireless

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

ba37 diode

Abstract: K8D1716U K8D1716UBB K8D1716UTB BGA11 samsung nor flash
Contextual Info: K8D1716UTB / K8D1716UBB FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History 0.0 Initial Draft 1 Draft Date Remark July 25, 2004 Advance Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY

N25Q256A11

Abstract: N25Q256 N25Q256A N25Q256A11ESF40
Contextual Info: 1.8V, 256Mb: Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 1.8V, Multiple I/O, 4KB Sector Erase N25Q256A11E1240x N25Q256A11EF840x N25Q256A11ESF40x Features • • • • • • • • • • • • • • • • Write protection

N25Q256A11

Abstract: N25Q256 N25Q256A11ESF40 N25Q256A11EF840 VDFPN N25Q256A11ESF N25Q256A serial flash 256Mb fast erase spi N25Q256A11E1240
Contextual Info: 1.8V, 256Mb: Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 1.8V, Multiple I/O, 4KB Sector Erase N25Q256A11E1240x N25Q256A11EF840x N25Q256A11ESF40x Features • • • • • • • • • • • • • • • • Write protection

N25Q512

Abstract: N25Q512A11 N25Q512A11G1240X N25Q512A11GSF40X SPI protocol n25q512a11gsf N25Q512A SOP package tray SOP2-16 VDFPN8 package N25Q512A11GSF40
Contextual Info: Preliminary‡ 512Mb, 1.8V, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 1.8V, Multiple I/O, 4KB Sector Erase N25Q512A11G1240X, N25Q512A11GSF40X Features • • • • • • • • • • • • • • • • • Write protection

KBB0XA300M

Abstract: transistor ba47 SAMSUNG MCP BA108 BA102 BA99 NAND FLASH BGA BGA34 BGA22 t402
Contextual Info: Preliminary MCP MEMORY KBB0xA300M - T402 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark October 15, 2002 Preliminary

Contextual Info: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised

BA127 Diode

Abstract: K8S6415ET BA134 samsung nor flash 3FFF80h-3FFFFFh
Contextual Info: FLASH MEMORY K8S6415ET B B Document Title 64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date 0.0 Initial Issue 1.0 Revision March 22, 2005 - Specification finalized - Add the requirement and note of Quadruple word program operation

S25FL256

Abstract: S25FL512 S98GL064 S25FL256* spansion S98GL064NB S98GL064NB0 S25FL204 s25fl128s S25FL129 S25FL032K
Contextual Info: Spansion Product Selector Guide April 2012 Spansion ® Products Portfolio Spansion offers a wide range of NOR Flash memory solutions in multiple voltages, densities and packages expressly designed and optimized for embedded and mobile applications, including:

samsung K5 MCP

Abstract: SAMSUNG MCP 152x16 Flash Memory SAMSUNG k5 K5A3240YT A3240 A3340 BA5111 BA4410
Contextual Info: Preliminary MCP MEMORY K5A3x40YT B C Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark November 6, 2002 Preliminary

ba4410

Abstract: Samsung MCP Flash Memory SAMSUNG k5 dual diode BA45 BA6511 samsung MCP K5 BA40 BA-36 BA5111 bga221
Contextual Info: K5A3x41YT B A MCP MEMORY Document Title Multi-Chip Package MEMORY 32M Bit (2Mx16) Dual Bank NOR Flash Memory / 4M(256Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft August 28, 2001 1.0 Final Specification

samsung k5 mcp

Abstract: SAMSUNG MCP A3240 Flash Memory SAMSUNG k5
Contextual Info: K5A3x40YT B A MCP MEMORY Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft August 28, 2001 1.0

BA100 diode

Abstract: BA115 BA116 BA961 SAMSUNG MCP ba841 ba7 transistor BA124 BA127 BA133 diode
Contextual Info: KADxx0300B - Txxx MCP MEMORY Document Title Multi-Chip Package MEMORY 128M Bit Two Dual Bank 64M Bit NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark August 9, 2002 Preliminary 0.0 Initial Draft 0.1 Revised (UtRAM)

Contextual Info: M36L0R7060U1 M36L0R7060L1 M36L0R7050U1 M36L0R7050L1 128 Mbit Mux I/O, Multiple Bank, Multi-Level, Burst Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package Preliminary Data Feature summary • ■ ■ ■ Multi-Chip Package – 1 die of 128 Mbit (8Mb x16, Mux I/O

512MB NOR FLASH

Abstract: BTA160 BGA 130 MCP NAND DDR S72WS512NFFKFWZ2 Flash MCp nand DRAM 137-ball ball 128 mcp NAND FLASH BGA S29WS256N S72WS256ND0 S72WS256NDE
Contextual Info: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on Bus 2

NX5850

Abstract: LCD 128x64 8051 mp3 player circuit diagram NX5855 0xFF03 graphical lcd 128X64 soc 1010 8051 free AGND116 AVDD111
Contextual Info: NX5850 User’s Manual Version 0.5 Sept. 23, 2005 Preliminary Copyright 2005 NEXIA DEVICE CO., LTD. , New Name of Mobile Doctor Co., Ltd., All rights reserved. NEXIA DEVICE CO., LTD. Confidential and Proprietary The information in this document is proprietary to NEXIA DEVICE CO., LTD.

e2p 25

Abstract: J-STD-020B M30L0R7000B0 M30L0R7000T0 M36L0R7040B0 M36L0R7040T0 M69AR024B
Contextual Info: M36L0R7040T0 M36L0R7040B0 128 Mbit Multiple Bank, Multi-Level, Burst Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 16 Mbit (1Mb x16) Pseudo SRAM

M36P0R9070E0

Abstract: M58PR512J M69KB128AB
Contextual Info: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM

M36L0R7050

Abstract: M36L0R7050L1 M36L0R7050U1 M36L0R7060L1 M36L0R7060U1 M69KM048AA M69KM096AA 64Mb-pSRAM ADQ14
Contextual Info: M36L0R7060U1 M36L0R7060L1 M36L0R7050U1 M36L0R7050L1 128 Mbit Mux I/O, Multiple Bank, Multi-Level, Burst Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package Preliminary Data Feature summary • ■ ■ ■ Multi-Chip Package – 1 die of 128 Mbit (8Mb x16, Mux I/O