NOIH2SM1000A Search Results
NOIH2SM1000A Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| NOIH2SM1000A-HHC | 
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NOIH2 - CMOS Image Sensor, IMAGE SENSOR-CMOS, 1024(H) X 1024(V) PIXEL, 2.20-2.60V, SQUARE, SURFACE MOUNT, CERAMIC, JLCC-84 | Original | 1.37MB | 67 | ||
| NOIH2SM1000A-HWC | 
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NOIH2 - CMOS Image Sensor, IMAGE SENSOR-CMOS, 1024(H) X 1024(V) PIXEL, 2.20-2.60V, SQUARE, SURFACE MOUNT, CERAMIC, JLCC-84 | Original | 1.37MB | 67 | 
NOIH2SM1000A Price and Stock
onsemi NOIH2SM1000A-HHCIC SPACE IMAGE SENSOR | 
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NOIH2SM1000A-HHC | Bulk | 
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NOIH2SM1000A-HHC | Tray | 1 | 
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NOIH2SM1000A-HHC | 26 Weeks | 1 | 
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NOIH2SM1000A-HHC | 1,545 | 
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onsemi NOIH2SM1000A-HWCIC SPACE IMAGE SENSOR | 
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
 | 
NOIH2SM1000A-HWC | Bulk | 
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Buy Now | |||||||
 
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NOIH2SM1000A-HWC | 1,221 | 
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NOIH2SM1000A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
optO i
Abstract: Gate level simulation just phd soldering process radiation ionizing dose TID detector Reflective Optical Sensor with Transistor Output euv photodiode 
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NOIH2SM1000A AN52561. NOIH2SM1000A/D optO i Gate level simulation just phd soldering process radiation ionizing dose TID detector Reflective Optical Sensor with Transistor Output euv photodiode | |
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 Contextual Info: NOIH2SM1000A HAS2 Image Sensor INTRODUCTION Scope This ICD version is generated after qualification campaign closure. This specification details the ratings, physical, geometrical, electrical and electro-optical characteristics, and test- and inspection-data for the High  | 
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NOIH2SM1000A NOIH2SM1000A/D | |
MIL-STD-883 method 2019
Abstract: ESCC ndr 550 APS2-FVD-06-003 radiation ionizing dose TID detector 
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NOIH2SM1000A NOIH2SM1000A/D MIL-STD-883 method 2019 ESCC ndr 550 APS2-FVD-06-003 radiation ionizing dose TID detector | |
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 Contextual Info: NOIH2SM1000A HAS2 Image Sensor INTRODUCTION Scope This ICD version is generated after qualification campaign closure. This specification details the ratings, physical, geometrical, electrical and electro-optical characteristics, and test- and inspection-data for the High  | 
 Original  | 
NOIH2SM1000A NOIH2SM1000A/D | |
BK7G18 glass
Abstract: NOIH2SM1000A 
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NOIH2SM1000A NOIH2SM1000A/D BK7G18 glass | |
transistor 56B marking
Abstract: NOIH2SM1000A 
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NOIH2SM1000A NOIH2SM1000A/D transistor 56B marking | |
APS2-FVD-06-003
Abstract: NOIH2SM1000A STAR250 star tracker just phd soldering process 606 diode ESCC21300 NOIH2SM1000A-HHC NOIH2SM1000S-HHC 
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NOIH2SM1000A NOIH2SM1000A/D APS2-FVD-06-003 STAR250 star tracker just phd soldering process 606 diode ESCC21300 NOIH2SM1000A-HHC NOIH2SM1000S-HHC | |
APS2-FVD-06-003
Abstract: PIN photodiode 10 nm 
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NOIH2SM1000A AN52561. NOIH2SM1000A/D APS2-FVD-06-003 PIN photodiode 10 nm | |
bond pull test
Abstract: STAR250 star tracker image sensor star tracker 
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NOIH2SM1000A NOIH2SM1000A/D bond pull test STAR250 star tracker image sensor star tracker | |
00149Contextual Info: NOIH2SM1000A HAS2 Image Sensor 1. Introduction • 1.1 Scope The HAS2 is classified as class 1A JEDEC classification [AD03] device for ESD sensitivity. For proper handling and storage conditions, refer to the ON Semiconductor application note AN52561. This ICD version is generated after qualification campaign  | 
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NOIH2SM1000A AN52561. NOIH2SM1000A/D 00149 |