NMOS-2 TRANSISTOR Search Results

transistor FGW

Abstract: MB81257 MBB1257-12-W
Contextual Info: 3749762~FUJITSU* MI CRÛ £ LECTRON ICS FUJITSU MICROELECTRONICS 7Û 78c 02847 D E | 374^7^2 Q0DEÛ47 7 | FUJITSU M OS M em ories • M B 8 1 2 5 7 -1 2 -W , M B 8 1 2 5 7 -1 5 -W NMOS 262,144-Bit Dynamic Random Access Memory With Nibble Mode Description The Fujitsu MB81257-W Is a fully decoded, dynamic NMOS ran­

surface mounted transistor 1BW 17

Abstract: 74VHCT244AFT S390X Hamamatsu Color sensor address MSTAR
Contextual Info: TECHNICAL INFORMATION SD-26 Characteristic and use of NMOS linear image sensors Contents 1. Introduction . 4 2. Structure and basic operation . 4

Contextual Info: TECHNICAL INFORMATION SD-26 Characteristic and use of NMOS linear image sensors Contents 1. Introduction . 4 2. Structure and basic operation . 4

relay 12v 200 ohm

Abstract: load-dump airbag temic telefunken IC flasher
Contextual Info: BCDMOS and I2L Technologies BCDMOS Characteristics Power transistor: MOS transistors: CMOS 5 V: Bipolar: Masks: Wiring: Channel length: VBR = 55 V, rDSon = 4.5 mWcm2 NMOS/PMOS 12 V 9 500 Gates/mm2 npn/pnp lateral 18 2 layers 2 mm (CMOS) Transistors Parameter

IR s27

Abstract: infrared led receiver s28 transistor s46 IR s28 transistor s19 infrared remote switch infrared led receiver transistor s49 TRANSISTOR S28 s16 transistor
Contextual Info: Infrared Remote Controller HT48RA0-5 Integrated Oscillator and NMOS Driver Characteristics  Fully integrated system oscillator and N-MOSFET driver. No need for external resonator, 2 capacitors and transistor, increasing product competitive advantages.  Adjustable programming - suitable for different remote code formats.

Y423

Abstract: 81256
Contextual Info: FU J I T S ^ M I C R O E lT c T r ' o N I C S 7 fi D Ë J 37 M T 7 t.S 0005031 3 M O S M e m o rie s • M B 8 1 2 5 6 - 1 2 - W , y^.^3 .^- F U J IT S U M B 8 1 2 5 6 - 1 5 - W NMOS 262,144-Bit Dynamic Random Access Memory D e s c rip tio n The Fujitsu MB81256-W is a fully decoded, dynamic NMOS ran­

Contextual Info: R1 2 0 2 x SERI ES STEP-UP DC/DC CONVERTER with SHUTDOWN FUNCTION NO.EA-255-120518 OUTLINE The R1202x Series are CMOS-based PWM step-up DC/DC converter ICs with low supply current. Each of these ICs consists of an NMOS FET, NPN transistor, an oscillator, a PWM comparator, a voltage

LT3468

Abstract: LT3468-1 LTC2903A LTC2903-A1 LTC2903B LTC2903C LTC2923 pMOS transistor
Contextual Info: DESIGN FEATURES Low Voltage Wizardry Provides the Ultimate Power-On Reset Circuit by Bob Jurgilewicz The Low Voltage Reset Problem VRST VIN Figure 2. Traditional NMOS pull-down circuit 14 5V 3.3V DC/DC CONVERTER 2.5V 1.8V SYSTEM LOGIC C1 0.1µF C2 0.1µF LTC2903B-2

multiplier ttl

Contextual Info: RFP2N18L RFP2N20L H a r r is August 1991 N-Channel Logic Level Power Field-Effect Transistors L2FET Package Features T O -2 2 0 A B TOP VIEW • 2A, 180V and 200V • rDS(0N) = 3 .5 « DRAIN (FLANGE) • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits

transistor A7

Abstract: HM5116100 HM534251B HM538123B HM62256 HM658512A low vce transistor hitachi eprom Hitachi DSA00503 Hitachi HM62256
Contextual Info: Application 1. Static RAM 1.1 Static RAM Memory Cell A memory cell used in Hitachi static RAM consists of 4 NMOS transistors and 2 load resistors as shown in Figure 1-1. The data in the cell can be retained as long as power is supplied, and read out without being

4n05l

Abstract: FP4N05L
Contextual Info: RFP4N05L RFP4N06L H a r r is August 1991 N-Channel Logic Level Power Field-Effect Transistors L^FET Package Features • 4A, 50V and 60V T O -2 2 0 A B TOP VIEW • 'D S iO N ) = ° - 8 f i DRAIN (FLANGE) • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits

Contextual Info: TPS73601-Q1, TPS73625-Q1, TPS73633-Q1 www.ti.com SLVSAI3 – SEPTEMBER 2010 Cap-Free, NMOS, 400mA Low-Dropout Regulator with Reverse Current Protection Check for Samples: TPS73601-Q1, TPS73625-Q1, TPS73633-Q1 FEATURES 1 • • 2 • • • • • • •

Contextual Info: FUJITSU MICROELECTRONICS 7 ft D e J 37^ 7^5 O Q Q a W l | T"VC'2 2 ^ T Advanced Inform ation FU JITSU MOS Memories MB811001-12, MB811001-15 1,048,576-Bit Dynamic Random Access Memory Description The Fujitsu MB811001 is a fully decoded, dynamic NMOS random

80C286

Abstract: 80C86 80C88 82C37A 82C82 CP82C37A-5 CS82C37A-5 IP82C37A-5 IS82C37A-5 NSC800
Contextual Info: 82C37A CMOS High Performance Programmable DMA Controller March 1997 Features Description • Compatible with the NMOS 8237A The 82C37A is an enhanced version of the industry standard 8237A Direct Memory Access DMA controller, fabricated using Intersil’s advanced 2 micron CMOS process. Pin

marking 1P sot-23

Abstract: TPS73601-Q1 ptwq
Contextual Info: TPS73601-Q1, TPS73625-Q1, TPS73633-Q1 www.ti.com SLVSAI3 – SEPTEMBER 2010 Cap-Free, NMOS, 400mA Low-Dropout Regulator with Reverse Current Protection Check for Samples: TPS73601-Q1, TPS73625-Q1, TPS73633-Q1 FEATURES 1 • • 2 • • • • • • •

TPS73618-EP

Contextual Info: TPS736xx-Q1 www.ti.com SLVSC36 – JUNE 2013 Capacitance-Free NMOS 400-mA Low-Dropout Regulator Check for Samples: TPS736xx-Q1 • • • 2 • • • • • • • • • • Qualified for Automotive Applications AEC-Q100 Qualified With the Following

Contextual Info: TPS73601-Q1, TPS73625-Q1, TPS73633-Q1 www.ti.com SLVSAI3 – SEPTEMBER 2010 Cap-Free, NMOS, 400mA Low-Dropout Regulator with Reverse Current Protection Check for Samples: TPS73601-Q1, TPS73625-Q1, TPS73633-Q1 FEATURES 1 • • 2 • • • • • • •

TPS73618-EP

Contextual Info: TPS736xx-Q1 www.ti.com SLVSC36 – JUNE 2013 Capacitance-Free NMOS 400-mA Low-Dropout Regulator Check for Samples: TPS736xx-Q1 • • • 2 • • • • • • • • • • Qualified for Automotive Applications AEC-Q100 Qualified With the Following

Z80-CTC

Abstract: Z0843004
Contextual Info: ^ 2 LG b Product Specification Z8430/Z84C30 NMOS/CMOS Z80 CTC Counter/Timer Circuit FEATURES • Four independently program m able counter/tim er channels, each with a readable downcounter and a selectable 16 or 256 prescaler. Downcounters are reloaded automatically at zero count.

TPS73618-EP

Contextual Info: TPS736xx-Q1 www.ti.com SLVSC36 – JUNE 2013 Capacitance-Free NMOS 400-mA Low-Dropout Regulator Check for Samples: TPS736xx-Q1 • • • 2 • • • • • • • • • • Qualified for Automotive Applications AEC-Q100 Qualified With the Following

DATA SHEET OF IC 317

Abstract: Test-Element-Group Thermal Test-Element-Group hitachi ic hitachi HM514256 HM514256 28-pin SOJ SRAM high speed thyristor HM62256 Reliability of Hitachi IC Memories
Contextual Info: Reliability of Hitachi IC Memories Contents 1. Structure 2. Reliability 3. Reliability of Semiconductor Devices Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern,

Contextual Info: R5 5 2 8 Z SERI ES Overvoltage Protector IC with Reverse Current Protection NO.EA-313-130513 OUTLINE The R5528Z001A is a CMOS-based overvoltage protector IC with reverse current protection that use an NMOS pass transistor to achieve ultra-low on resistance Typ. 54mΩ . Overvoltage protection threshold is as high as

hitachi eprom

Abstract: HMCS6800
Contextual Info: • APPLICATION 1. Static RAM tc o tt time for chip select to data retention : The 1.1. Static RAM Memory Cell The static RAM memory cell consists of flip-flops organized as 4 NMOS transistors and 2 load resistors as shown in figure 1-1. The data in the cell can be

TPS73618-EP

Abstract: TPS73615-EP TPS73630-EP TPS73632-EP
Contextual Info: TPS736xx www.ti.com SBVS038T – SEPTEMBER 2003 – REVISED AUGUST 2010 Cap-Free, NMOS, 400mA Low-Dropout Regulator with Reverse Current Protection FEATURES 1 • 2 • • • • • • • • • • Stable with No Output Capacitor or Any Value or Type of Capacitor