NKT 90 Search Results

kt420

Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
Contextual Info: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS

hsch 3486 zero bias schottky diode

Abstract: "zero-bias schottky diode" HSCH-3486 S11 SCHOTTKY diode Microwave detector diodes Microwave detector diodes 18 GHz NKT 90 Zero Bias Small Detector Diodes 5963-0951E HSMS-2850
Contextual Info: The Zero Bias Schottky Detector Diode Application Note 969 Introduction Table 1. Forward Voltage Characteristic Since all diodes in this discussion are Schottky diodes, the forward current obeys the equation: I = IS q e nkT ( (V–IRS -1 The ideality factor, n, is close to

hsch 3486 zero bias schottky diode

Abstract: hsch-3486 HSMS-8101 hsms-2850
Contextual Info: The Zero Bias Schottky Detector Diode Application Note 969 Introduction Table 1. Forward Voltage Characteristic Since all diodes in this discussion are Schottky diodes, the forward current obeys the equation: I = IS q ( (V–IRS nkT e -1 The ideality factor, n, is close to

NKT 90

Abstract: AD149 OC 140 germanium transistor germanium af transistors ad 149 AD140 OC29 NKT452 OC36 NKT404
Contextual Info: Germanium Power Transistors PNP Germanium A F A llo y Power Transistors in T 0 3 metal case T ype M a xim u m ratings Characteristics @ T a m |.,= 2 5 ° C PT O T{ W I- 0 ^F E A A D 14 0 A D 149 4CI 30 55 50 10 20 3.0 3.5 43 37.5 90 100 30 20 . 10 0 1.0/1.01

germanium transistors PNP

Abstract: transistor t05 2n404 mw 137 NKT11 NKT139 2N1303 2N 1309 NKT135 2n 1305
Contextual Info: PNP Germanium Transistors PIMP Germanium RF A lloy Transistors in T 0 1 and T 0 5 metal cases Characteristics at T amb=25°. M axim um ratings Type Case B VCEO V Bvcso bvebo V V XCM mA mW JJM °C hF E ^ C E / i C V /m A ) pt o t ' h/rf ^ C E ^ Ó (V /m A I

Newmarket Transistors

Abstract: NKT Semiconductors Newmarket nkt NKT216 2N1305 NKT213 2N1309 germanium transistors NPN ACY21 OC72
Contextual Info: N ew m arket Sem iconductors Germanium A lloy Transistors P N P Germanium A llo y Transistors REFERENCE T A B LE Maximum ratings. C haracteristics at T 4 = 25°C. Code ACY ACY ACY ACY ACY ACY ACY ACY 17 18 19 20 21 22 39 40 BVC eo BVcao BV ebo IcM V V V A

nkt 110/12

Abstract: ACY39 NKT221 germanium transistors PNP NKT 90 ACY20 ma902 ACY41 026 pnp
Contextual Info: PNP Germanium Transistors PN P Germanium A F A llo y Transistors in T 0 5 metal case fr <vce~ 6V-'c 1 m A Com m on Characteristics Type A C Y 18 19 20 21 22 39 A C Y 40 A C Y 41 A C Y 44 NKT221 N K T 222 N K T 223 N K T 224 N K T 225 N K T 226* N K T 227

NKT275

Abstract: OC75 OC81DN OC72 OC78 NKT213 germanium transistors PNP oc75 oc76 ACY35 nkt 275
Contextual Info: PNP Germanium Transistors PNP Germanium A F Alloy Transistors in T 0 1 metal case Common Characteristics fr Vc£ Cob <VC B = 6 V , \E = 0 •6 V , lc = 1mA) 1 MHz Characteristics at T amb = 2 5 °C Maximum ratings Type Low Noise Types 40 pF B V C fO V B V CSO

D4148

Abstract: OA91 OA91 DIODES oa47 diode in4007 IN 4004 diodes OA47 OA79 IN 4007 OA90 diode
Contextual Info: Diodes and Rectifiers M in ia tu re D iod es in glass package M ax im u m ratings Case D 03 D3 O A 91 O A 90 O A 47 O A 79 IN 4148 D 59 D542 D 4148 C o n s tru c tio n y RM V Pt. C o n ta c t Ge Pt. C o n ta c t Ge G o ld B onded Ge Pt. C o n ta ct Ge Si_ D iffused_

SBAA083

Abstract: SBAU070 ADS1240 ADS1241 ADS1241-EVM sbaa100
Contextual Info: Application Report SBAA083 – February 2004 Accessing the Onboard Temperature Diode in the ADS1240 and ADS1241 Sean Chuang and Jason Bridgmon ABSTRACT The ADS1240 and ADS1241 are precision, wide dynamic range, delta-sigma Analog-to-Digital Converters ADCs with 24-bit resolution. These products offer a wide variety of features, including

BVT-Z

Abstract: aruz
Contextual Info: LJ=6 LVaZVb k@VRcdaVb jORaZ_db R^U bZ]`\V Z^`dc b`VTZWZTRcZ_^ lxqvtQ+.-p uqy>.l/\XIVREP >:muOdn l87s800m/\XIVREP GSRXEGXn jORaZ_db Wd^TcZ_^ l8YX +.4 JYRGXMSR l;SJX ;XEVX JYRGXMSRm/\GITX JSV 87s800 GSRXVSP X]TIn l8YX HMWTPE] JYRGXMSR lytszt2^ EYXSQEXMG GSRZIVXMRK JYRGXMSR

hsch 3486 zero bias schottky diode

Abstract: HSMS-2850 HSCH-3486 HSMS-8101 5963-0951E hsms-10-5
Contextual Info: FORWARD CURRENT HSCH-3486 The Zero Bias Schottky Detector Diode 1 Application Note 969 0.1 0.01 Introduction 0.1 A conventional Schottky diode detector such as the Avago Technologies HSMS-8101 requires no bias for high level input power — above one milliwatt. However,

triac mw 131 600d

Abstract: 65n06
Contextual Info: / 20 13 -2 01 4 Nell,your reliable green partner Europe North America China Taiwan ,Taipei Africa South America Oceania Evolving green Innovation and Future Worldwide Presence Headquarter TEL FAX E-Mail Nell semiconductor Taiwan,Taipei +886-2-26474181 +886-2-26429717

diode fr 107

Abstract: fr 107 diode nkt ceramic
Contextual Info: Texas Instruments TGD0600 Series GaAs Schottky-Barrier Mixer Diodes Features • Broadband performance from VHF to 100 GHz ■ Less than 7-dB conversion loss from 32 to 90 GHz ■ Rugged, Symmetrical, Hermetic Package Description The Texas Instruments TGD0600 Series

PE58292

Abstract: DE57982EN
Contextual Info: Medium Voltage Distribution Catalogue I 2014 RM6 up to 24 kV Gas Insulated Ring Main Unit Make the most of your energy SM Gas Insulated Switchgear GIS Ring Main Unit up to 24 kV Contents RM6 up to 24 kV Contents Presentation A-1 The RM6 range B-1 Unit characteristics

Contextual Info: ï ï 6 ì 5 4 NIC HT VER HASSTE KANTEN SIND N I C H T M A ß S T Ä B L IC H IN m LO Ï 3 ÄNDERUNGEN NISCHEN BEHALTEN DIE DEM FORTSCHRITT WIR UNS VERTRAULI CH TECH­ DIENEN, VOR UNVERÖ FFENTLICHTE ZEICHNUNG. ALLE V O R B E H A L T E N . V E R V I E L F Ä L T I G U N G UND

temperature sensor interface with 8051

Abstract: sbaa100 coding for temperature sensor interface with 8051 circuit diagram temperature measurement rtd YSI 55031 MSC1210-DAQ-EVM 8051 coding for temperature measurement ADS1218 RTD 1055 ADS1218 application notes
Contextual Info: Application Report SBAA100 - July 2003 Using the MSC121x as a High-Precision Intelligent Temperature Sensor Hugo Cheung Data Acquisition Products − Microsystems ABSTRACT The MSC121x [1] is an embedded controller with a high-precision, high-stability temperature

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

HMPS-2822

Abstract: HSMS-282x Rf level detector Design Seminar ratio Detector HMPS-2820 DIODE RF DETECTOR HSMS High frequency detector diode Agilent Technologies RF APPLICATION OF Resistance Temperature Detector
Contextual Info: A Temperature Compensated Linear Power Detector Application Note 1328 Introduction In many RF applications where an output power level from a source varies across frequency bands and time, it is critical that these variations are either kept to their minimum or allowed to occur in a controlled manner.

rf detector diode low power

Abstract: K band detector diode APPLICATION OF Resistance Temperature Detector HSMS High frequency detector diode 47K variable resistor capacitor 47k HMPS-2820 HMPS-2825 HSMS-2825 Rf level detector
Contextual Info: A Temperature Compensated Linear Power Detector Application Note 1328 Introduction In many RF applications where an output power level from a source varies across frequency bands and time, it is critical that these variations are either kept to their minimum or allowed to occur in a

2 TZ 11

Abstract: TZ 10a PR 8501 6 TZ 70 MIKRO tz049 2 TZ 05 ScansUX66 temperaturregler VDE 0660 - 107
Contextual Info: M. K. JUCHHEIM GmbH & Co Postadresse: Hausadresse: Moltkestraße 13-31 36035 Fulda, Germany 36039 Fulda, Germany Telefon 0661 60 03-716 Telefax (0 6 6 0 )6 0 0 3 -5 04 Telex 49 701 ju f d email JUMO de@e-mail.com (5 D MESS- UND REGELTECHNIK Seite 1 /3 MICROSTAT-M

DIODE 0.7v

Abstract: Diode Equivalent BAT62 BAT62-L704 schottky diode cross reference AN185 pn junction diode ideality factor SCHOTTKY DIODES CROSS REFERENCE ADS2008 BAT62 BAT62-07L4
Contextual Info: Low Barrier Schottky Diode BAT62 RF Power Detection A pplication Note AN185 Revision: V1.0 Date: 21-12-2009 RF and Protection Devices Edition 21-12-2009 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

PNP 2n3906 331

Abstract: 2n3906 equivalent transistor 2N4148 2n3906 331 transistor kt 925 NPn 2n3906 331 capacitor 476 10k 935 ltc3880 LTspice npn equivalent of 2n3906 transistor
Contextual Info: Application Note 137 May 2012 Accurate Temperature Sensing with an External P-N Junction Michael Jones Introduction Temperature Sensing Theory Many Linear Technology devices use an external PNP transistor to sense temperature. Common examples are LTC3880, LTC3883 and LTC2974. Accurate temperature

NPN transistor 2n3904 beta value

Abstract: 2N3904 2N3906 ADM1021 ADM1023 ADM1023ARQ RQ-16
Contextual Info: ACPI-Compliant High-Accuracy Microprocessor System Temperature Monitor ADM1023* a FEATURES Next Generation Upgrade to ADM1021 On-Chip and Remote Temperature Sensing Offset Registers for System Calibration 1؇C Accuracy and Resolution on Local Channel 0.125؇C Resolution/1؇C Accuracy on Remote Channel