NKS 4 Search Results
NKS 4 Price and Stock
Texas Instruments ADS1014QNKSRQ1Analog to Digital Converters - ADC Automotive 12-Bit 3. 3kSPS 1-Ch Delta-Si |
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ADS1014QNKSRQ1 | 4,980 |
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Texas Instruments ADS1114QNKSRQ1Analog to Digital Converters - ADC Automotive 16-Bit 86 0SPS 1-Ch Delta-Sig |
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ADS1114QNKSRQ1 | 4,805 |
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Diodes Incorporated NKS7-240-20Crystals Crystal Ceramic SEAM7050 T&R 1K |
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NKS7-240-20 | 1,375 |
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Amphenol Corporation FA1-NKSJ-C04-0RF Connectors / Coaxial Connectors RG58 141 FEMALE ST FAKRA SMB |
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FA1-NKSJ-C04-0 | 624 |
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Analog Devices Inc ADSP-2187NKSTZ-320Digital Signal Processors & Controllers - DSP, DSC 32K PM/32K DM RAM,16-bit, 80 MIPS, 1.8V |
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ADSP-2187NKSTZ-320 | 31 |
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NKS 4 Datasheets Context Search
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NKS3 resistorsContextual Info: NKS. Vishay Draloric Metal Film Resistors, Fusible Type FEATURES • Fusible resistor for constant current designed for overload protection • High positive temperature coefficient • Flame retardent coating • Defined switch-off behaviour STANDARD ELECTRICAL SPECIFICATIONS |
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23-Oct-00 NKS3 resistors | |
A539
Abstract: F46F ha 1555 5357 mxc 536 d-855 637Z BCM+5357
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G6889 ESE5955656697: XFG598 7C17D17E 6C16D16E 79XFE? 775iY@ A539 F46F ha 1555 5357 mxc 536 d-855 637Z BCM+5357 | |
.47j
Abstract: U09D
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/JH77 66iEVK8 ESE68667667? .47j U09D | |
1 Fp smd
Abstract: ds-115 SMD CRYSTAL Ceramic smd diode ED smd transistor LY resistance to soldering heat J-STD-020C eCERA eCERA crystal
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50ppm, 1234MHz, 30ppm NKS7NAD1-08 1 Fp smd ds-115 SMD CRYSTAL Ceramic smd diode ED smd transistor LY resistance to soldering heat J-STD-020C eCERA eCERA crystal | |
smd diode F6
Abstract: Diode smd f6 f6 diode NES 1004 NKS6NAD1 saronix 106.2500 Specification Quartz Crystals 6 Mhz smd transistor LY
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50ppm, 1234MHz, 30ppm NKS6NAD1-08 smd diode F6 Diode smd f6 f6 diode NES 1004 NKS6NAD1 saronix 106.2500 Specification Quartz Crystals 6 Mhz smd transistor LY | |
JS12M
Abstract: JS24M
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A67A
Abstract: B799 39A3 BA QD
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Saronix CRYSTAL FY
Abstract: smd transistor FY SMD 14.7456 quartz crystal JESD22-b103 SMD F9 B104 JESD22-A113 JESD22-B104 JESD22-B107 J-STD-002
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50ppm 1234MHz, 30ppm NKS5NAD1-18 Saronix CRYSTAL FY smd transistor FY SMD 14.7456 quartz crystal JESD22-b103 SMD F9 B104 JESD22-A113 JESD22-B104 JESD22-B107 J-STD-002 | |
CS5200
Abstract: CS5250-80 556 pinout diagram data encryption standard vhdl CS-527 wireless ciphertext
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128-bit 256-bit 32-bit CS5200 CS5250-80 556 pinout diagram data encryption standard vhdl CS-527 wireless ciphertext | |
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Contextual Info: SPECIFICATIONS SILIKROME Material Temperature Range Shelf Life Resistant to GRADE MILITARY Silicone Rubber conforming to A-A-59588 Class II GR 50 -112°F to +400°F -160°F to +450°F -80°C to +204°C (-106°C to +260°C) -112°F to +575°F (-80°C to +302°C) |
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Contextual Info: Alle Rechle vorbehallen/ 411 rights reserred 5 3 k 2 1 D C B 1] Aufnahme f u r Be z e i c h nu ng s s c hi I der max. 6 - s t e l l i g s l o t s f o r d es i gnat i on s t r i p s (max. 6 d i g i t s ) A ll O iunsions in •* ' / lechn. [h a ra c le r. |
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heinemann breaker
Abstract: Heinemann circuit breaker JA1 HEINEMANN BREAKER HEINEMANN ja
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SARONIX flContextual Info: ADVANCED INFORMATION FL Series Quartz Crystal Legacy NKS3 Series 3.2 x 2.5mm Miniature Quartz Crystal Ceramic SMD FL Frequency Range: • 12.0000 MHz to 66.0000 MHz Fundamental Characteristics at 25°C ±2°C: • Frequency Calibration Tolerance: ±10ppm, ±20ppm, or ±30ppm |
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10ppm, 20ppm, 30ppm 1234MHz, 30ppm NKS3NAD1-18 REV2008 SARONIX fl | |
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Contextual Info: - PRELIMINARY - July 1996 Edition 1.0 FUJITSU PRODUCT PROFILE SHEET M B 8 1 1 1 7422A-125/-100/-84/-67 [2 K R e fre s h ] CMOS 2 X 2M X 4 SYNCHRONOUS DRAM C M O S 2 B A N K S OF 2,097,1 5 2 - W O R D S x 4 - B I T S Y N C H R O N O U S DYNAM IC RANDOM ACCESS M EM O RY |
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422A-125/-100/-84/-67 B81117422A 1117422A | |
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78p064
Abstract: 78p054 78P083 8bit pwm generator 78p014 intel 16k 8bit RAM NEC FIP intel 16k 8bit RAM chip d ram memory ic LED LEVEL METER DRIVER
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78K/0 78K/II COM-75x 400ns) COM-75x 78K/II 78K/0 A78000 78p064 78p054 78P083 8bit pwm generator 78p014 intel 16k 8bit RAM NEC FIP intel 16k 8bit RAM chip d ram memory ic LED LEVEL METER DRIVER | |
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Contextual Info: CMOS 4-Bit Single-Chip Microcomputers LC5860/5870 Series Overview T he LC 58 60/5 870 S eries C M O S 4-b it sin gle -chip m icro com p uters are ideal for con tro lling LC D displays. S anyo's pro prie ta ry LCD display circu it te ch n o lo g y con tro lle r/ |
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LC5860/5870 15-bit GG1332Q | |
73N30
Abstract: ixfk73n30
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O-264 73N30 ixfk73n30 | |
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Contextual Info: T -1 3/* In G a A lP U ltr a B rig h t LED • InGaAlP Technology • T-VA 5 mm Package • High Intensity Red Light (kp= 623 nm) Emission • Water Clear Lens M AXIM UM RATINGS (Ta = 2 5 C) CHARACTERISTIC Forward Current SYMBOL RATING UNIT 50 mA 'f Reverse Voltage |
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00006CH | |
512nm
Abstract: 1000PPM 506nm
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LD-700ABG1-D0 SPE/LD-700ABG1-D0 FCN20050306 COTCO-D-074 512nm 1000PPM 506nm | |
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Contextual Info: Tem ic U2783B Semi conduct or s 1250-MHz / 400-MHz Twin PLL Description The IC U2783B is a low-power twin PLL manufactured with TEMIC Semiconductors’ advanced UHF process. The maximum operating frequency is 1250 MHz and 400 MHz respectively. It features a wide supply-voltage |
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U2783B 1250-MHz 400-MHz U2783B D-74025 19-May-99 | |
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Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516CD645 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CD645 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 16 pieces of |
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MC-4516CD645 16M-WORD 64-BIT MC-4516CD645 uPD4564841 | |
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Contextual Info: HIGH-SPEED 64K x 16 BANK-SWITCH ABLE DU AL-PORTE D SRAM WITH SEMAPHORE CONT ROLS ADVANCED IDT70728S/L FE ATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Eight independent 8K x 16 banks - 1 Megabit ot memory on chip • Fast asynchronous address-to-data access time: 15ns |
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16-bit IDT70728S/L 100-pin PN100-1) | |
SN74ALVCH162344Contextual Info: SN74ALVCH162344 1-T0-4 ADDRESS DRIVER WITH 3-STATE OUTPUTS SCESO85B - AU G U S T 1996 - REVISED JU LY 1997 Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process Output Ports Have Equivalent 26-il Series |
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SN74ALVCH162344 SCES085B 26-il 300-mil | |
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Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-458CB645 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458CB645 is an 8,388,608 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 64M |
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MC-458CB645 64-BIT MC-458CB645 uPD4564841 M168S-50A90 | |