NIP 17 Search Results

JSTD-20C

Abstract: MSAT-N25
Contextual Info: MSAT-N25 NIP Diode Attenuator Shunt Element 2012 Plastic Molded DFN Description Features A broadband, High Linearity medium power shunt NIP Attenuator element 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It is

Contextual Info: NIP-86020 Next Generation Network Module 40GbE Fiber Dual QSFP+ Ports The Ne w CASwe ll Ne twork Module 40GbE Fibe r The NIP-86020 leverages Mellanox Ethernet controller connectx-3, fully compliant with 40 GbE network interface. Provides IPv6 Ofloading, IEEE

Metelics

Contextual Info: MSAT-N25 NIP Diode Attenuator Shunt Element 2012 Plastic Molded DFN Description Features A broadband, High Linearity medium power shunt NIP Attenuator element 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It is

Contextual Info: MSAT-N25 NIP Diode Attenuator Shunt Element 2012 Plastic Molded DFN Description Features A broadband, High Linearity medium power shunt NIP Attenuator element 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It is

METELICS

Contextual Info: MSAT-N25 NIP Diode Attenuator Shunt Element 2012 Plastic Molded DFN Description Features A broadband, High Linearity medium power shunt NIP Attenuator element 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It is

PD-2062

Abstract: 2062
Contextual Info: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-2062 1. Scope : This specification applies to NIP silicon photodiode chips, Device No. PD-2062 2. Structure : 2-1. Planar type : NIP diode. 2-2. Electrodes : Top side Cathode : Aluminum alloy. Back side ( Anode ) : Gold alloy.

bh 26 00

Abstract: DH80102 BH-2003 BH301 80204 89129 R/BH-202
Contextual Info: SILICON PIN AND NIP DIODES FOR SWITCHING AND PHASE SHIFTING APPLICATIONS MEDIUM AND HIGH POWER This series of high power, high voltage PIN and NIP diodes incorporates ceramic-glass passivated mesa technology. A broad range of products is available, In terms of breakdown voltages, junction

NIP1CHP

Contextual Info: NIP SERIES DIE N-Channel JFET The NIP Series offers the designer an alternative fortrue high performance analog switching applications. Good breakdown voltage characteristics coupled with low on-resistance and very fast switching make these devices suitable for a wide range of applications. Die

GC4310

Abstract: GC4311 GC4371 GC4372 GC4373 GC4374 GC4375 GC4200
Contextual Info: GC4310 – GC4375 CONTROL DEVICES High Speed NIP Diodes TM RoHS Compliant KEY FEATURES The GC4300 series are high speed anode base NIP diodes made with high resistivity reverse epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by

Contextual Info: GC4310 – GC4375 CONTROL DEVICES High Speed NIP Diodes TM RoHS Compliant K EY FEAT U RES The GC4300 series are high speed anode base NIP diodes made with high resistivity reverse epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by

E64380

Abstract: PC3H410NIP PC3H411NIP PC3Q410NIP DIODE C04 06
Contextual Info: PC3H41X NIP Series/PC3Q410 NIP PC3Q410NIP Rank mark No mark Conditions IF=±0.5mA VCE=5V Ta=25°C Ic mA Conditions 0.25 to 2.0 IF=±0.5mA VCE=5V Ta=25°C 3 1 2 3 ±0.2 0.4±0.1 H41 2 3 4 1 2 5.3±0.3 2.0 ±0.2 0.1 ±0.1 PC3Q410NIP 10.3±0.3 Internal connection

E64380

Abstract: PC3H410NIP PC3H411NIP PC3Q410NIP nip 17
Contextual Info: PC3H41X NIP Series/PC3Q410 NIP PC3Q410NIP Rank mark No mark Conditions IF=±0.5mA VCE=5V Ta=25°C Ic mA Conditions 0.25 to 2.0 IF=±0.5mA VCE=5V Ta=25°C 3 1 2 3 ±0.2 0.4±0.1 H41 2 3 4 1 2 5.3±0.3 2.0 ±0.2 0.1 ±0.1 PC3Q410NIP 10.3±0.3 Internal connection

PC3Q710NIP

Abstract: pc3q711 Low input current Photocoupler E64380 PC3H710NIP PC3H711NIP PC3H712NIP PC3H715NIP PC3Q711NIP
Contextual Info: PC3H71X NIP Series/PC3Q71X NIP Series PC3H71xNIP Series Internal connection diagram Anode mark 1 4 4 3 1 2 H71 2 3 4.4±0.2 • Applications 3 4 1 ■ Rank Table Ic mA 0.5 to 3.5 0.7 to 1.75 1.0 to 2.5 0.7 to 2.5 Conditions Model No. Rank mark PC3Q710NIP A or no mark

Contextual Info: PC3H71X NIP Series/PC3Q71X NIP Series PC3H71xNIP Series Internal connection diagram Anode mark 1 4 4 3 1 2 H71 2 3 4.4±0.2 • Applications 3 4 1 ■ Rank Table Ic mA 0.5 to 3.5 0.7 to 1.75 1.0 to 2.5 0.7 to 2.5 Conditions Model No. Rank mark PC3Q710NIP A or no mark

varactor multiplier

Abstract: step recovery diodes
Contextual Info: MICROWAVE SILICON COMPONENTS CONTENTS • _ _ 2 4 • SYMBOLS _ • HIGH VOLTAGE PIN and NIP DIODES_ 5 - Silicon PIN switching and phase shifting diodes_8

Contextual Info: Solderless terminals y B Ring tongue (R-type) Non-insulated- 11 Heavy duty (E/ES type)-25 Of nickel (NIP type)-26 Bent at 90” (L type)- 27

82546GB

Abstract: ABN-192 bypass intel gigabit ethernet programming duplex display led
Contextual Info: NIP-32120 Dual-Port 64-bit Gigabit Ethernet Adaptor with Fiber Bypass Function Dual MM LC fiber ports with fiber-bypass function Switch automatically, and programmable, to bypass mode while power fails and software hangs Software control to switch bypass/non-bypass

1n4148 high speed solid state diode

Contextual Info: 3ME T> □1117ME D0DD31b 7 INRO S Z -Z ! DRIVERS DEFINED A driver is an interface between digital circuitry (TTL, ECL, etc. and solid state RF/microwave switch circuitry. The switch usually consists of PIN/NIP diodes or Field Effect Transistors. In order to maintain

U320-2

Abstract: U321 U322 f625-9q2 2N5432 U320 indiana general
Contextual Info: Siliconix • VHF Buffer Am plifiers ■ IF Am plifiers U321 Performance Curves NIP See Section 5 B EN EFITS High Gain gfs = 120,000 jumho Typical 11322 • U320 B n-channel JFETs designed for. • Wide Dynamic Range • Low Intermodulation Distortion TO -39

Contextual Info: CAR-1001 Luna pier platform, 8 GbE ports x86-DT Architecture FEATURE CPU Up to Dual core 2 SODIMM DDR3 800 4GbE port Support Character/Graphical display module   Four PCI-E GbE ports CASwell NIP RJ45 console & Dual USB SPECIFICATION

indiana general

Abstract: U321 U322 U320 f625-9q2
Contextual Info: . Performance Curves NIP See Section 5 • VHF Buffer Am plifiers ■ IF Am plifiers U321 designed fo r B Siliconix U320 n-channel JFETs BENEFITS 11322 • High Gain gfs = 120,000 jumho Typical • Wide Dynamic Range • Low Intermodulation Distortion TO -39

LM 35

Contextual Info: Printed Circuit Board Terminal Blocks LP Series 3.50 mm Pitch LM 3.5/90 Single-level 90° orientation without test points nip ujjju CO N T 0 1.3 Rated Voltage Rated Current Wire Size Strip Length Torque Nm lb. in. Pin Length 300 V 300V 125 V 10 A #28. 14 AWG

bh 10 g

Abstract: 80156 dh80102 DH80189 89308
Contextual Info: T E K E LE C C O M P O N E N T S bflE D \ f| • ^QD3767 G D G D 5 2 3 37T ■ . HIGH-VOLTAGE PIN AND NIP DIODES ■ - SILICON PIN SWITCHING AND PHASE SHIFTING DIODES MEDIUM AND HIGH POWER

alpha diode pin

Abstract: CSN9250 Multijunction
Contextual Info: PIN/NIP Switching Diode Multi-Junction Chips ALPHA IN » / SEMICONDUCTOR 4ÔE D • GSÖS443 D0G12D7 S T T ■ ALP Features ■ ■ ■ ■ ■ ■ Low Capacitance,.015 pF Low Forward Resistance,1.5 Ohms Fast Switching, 10-20 ns Low Thermal Resistance Full Area Bonding Metal