NIP 17 Search Results
NIP 17 Price and Stock
Sharp Microelectronics of the Americas PC817XNNIP1BTransistor Output Optocouplers |
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PC817XNNIP1B | 35,116 |
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Sharp Microelectronics of the Americas PC817X1NIP1BTransistor Output Optocouplers |
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PC817X1NIP1B | 4,703 |
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Sharp Microelectronics of the Americas PC817X4NIP1BTransistor Output Optocouplers |
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PC817X4NIP1B | 4,604 |
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Sharp Microelectronics of the Americas PC817X2NIP1BTransistor Output Optocouplers |
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PC817X2NIP1B | 2,657 |
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Sharp Microelectronics of the Americas PC817X3NIP1BTransistor Output Optocouplers |
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PC817X3NIP1B |
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NIP 17 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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JSTD-20C
Abstract: MSAT-N25
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MSAT-N25 A17102 JSTD-20C MSAT-N25 | |
Contextual Info: NIP-86020 Next Generation Network Module 40GbE Fiber Dual QSFP+ Ports The Ne w CASwe ll Ne twork Module 40GbE Fibe r The NIP-86020 leverages Mellanox Ethernet controller connectx-3, fully compliant with 40 GbE network interface. Provides IPv6 Ofloading, IEEE |
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NIP-86020 40GbE 40GbE NIP-86020 40Gbps AI3-3363 MT27518A0-FCCR-BE | |
MetelicsContextual Info: MSAT-N25 NIP Diode Attenuator Shunt Element 2012 Plastic Molded DFN Description Features A broadband, High Linearity medium power shunt NIP Attenuator element 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It is |
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MSAT-N25 A17102 Metelics | |
Contextual Info: MSAT-N25 NIP Diode Attenuator Shunt Element 2012 Plastic Molded DFN Description Features A broadband, High Linearity medium power shunt NIP Attenuator element 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It is |
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MSAT-N25 A17102 | |
METELICSContextual Info: MSAT-N25 NIP Diode Attenuator Shunt Element 2012 Plastic Molded DFN Description Features A broadband, High Linearity medium power shunt NIP Attenuator element 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It is |
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MSAT-N25 A17102 METELICS | |
PD-2062
Abstract: 2062
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PD-2062 038mm) 153mm× voltag25 100uA 905nm PD-2062 2062 | |
bh 26 00
Abstract: DH80102 BH-2003 BH301 80204 89129 R/BH-202
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Resistan00 TD037 bh 26 00 DH80102 BH-2003 BH301 80204 89129 R/BH-202 | |
NIP1CHPContextual Info: NIP SERIES DIE N-Channel JFET The NIP Series offers the designer an alternative fortrue high performance analog switching applications. Good breakdown voltage characteristics coupled with low on-resistance and very fast switching make these devices suitable for a wide range of applications. Die |
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MIL-STD-750C, 2N5432 SST108 2N5433 2N5434 SST109 SST110 10mA-12V NIP1CHP | |
GC4310
Abstract: GC4311 GC4371 GC4372 GC4373 GC4374 GC4375 GC4200
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GC4310 GC4375 GC4300 18Ghz GC4310 GC4311 GC4371 GC4372 GC4373 GC4374 GC4375 GC4200 | |
Contextual Info: GC4310 – GC4375 CONTROL DEVICES High Speed NIP Diodes TM RoHS Compliant K EY FEAT U RES The GC4300 series are high speed anode base NIP diodes made with high resistivity reverse epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by |
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GC4310 GC4375 GC4300 18Ghz | |
E64380
Abstract: PC3H410NIP PC3H411NIP PC3Q410NIP DIODE C04 06
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PC3H41X Series/PC3Q410 PC3Q410NIP PC3Q41 E64380 PC3H410NIP PC3H411NIP PC3Q410NIP DIODE C04 06 | |
E64380
Abstract: PC3H410NIP PC3H411NIP PC3Q410NIP nip 17
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PC3H41X Series/PC3Q410 PC3Q410NIP PC3Q41 E64380 PC3H410NIP PC3H411NIP PC3Q410NIP nip 17 | |
PC3Q710NIP
Abstract: pc3q711 Low input current Photocoupler E64380 PC3H710NIP PC3H711NIP PC3H712NIP PC3H715NIP PC3Q711NIP
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PC3H71X Series/PC3Q71X PC3H71xNIP PC3Q710NIP PC3Q711NIP PC3Q71xNIP PC3Q71 pc3q711 Low input current Photocoupler E64380 PC3H710NIP PC3H711NIP PC3H712NIP PC3H715NIP PC3Q711NIP | |
Contextual Info: PC3H71X NIP Series/PC3Q71X NIP Series PC3H71xNIP Series Internal connection diagram Anode mark 1 4 4 3 1 2 H71 2 3 4.4±0.2 • Applications 3 4 1 ■ Rank Table Ic mA 0.5 to 3.5 0.7 to 1.75 1.0 to 2.5 0.7 to 2.5 Conditions Model No. Rank mark PC3Q710NIP A or no mark |
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PC3H71X Series/PC3Q71X PC3Q71X E64380 PC3H71xNIP PC3H710NIP PC3H711NIP PC3H712NIP PC3H715NIn | |
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varactor multiplier
Abstract: step recovery diodes
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Contextual Info: Solderless terminals y B Ring tongue (R-type) Non-insulated- 11 Heavy duty (E/ES type)-25 Of nickel (NIP type)-26 Bent at 90” (L type)- 27 |
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t------------42 | |
82546GB
Abstract: ABN-192 bypass intel gigabit ethernet programming duplex display led
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NIP-32120 64-bit ABN-192 64bit/133MHz 82546GB 10/100/1000Mbps ABN-182 ABN-192 bypass intel gigabit ethernet programming duplex display led | |
1n4148 high speed solid state diodeContextual Info: 3ME T> □1117ME D0DD31b 7 INRO S Z -Z ! DRIVERS DEFINED A driver is an interface between digital circuitry (TTL, ECL, etc. and solid state RF/microwave switch circuitry. The switch usually consists of PIN/NIP diodes or Field Effect Transistors. In order to maintain |
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1117ME D0DD31b 1n4148 high speed solid state diode | |
U320-2
Abstract: U321 U322 f625-9q2 2N5432 U320 indiana general
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Contextual Info: CAR-1001 Luna pier platform, 8 GbE ports x86-DT Architecture FEATURE CPU Up to Dual core 2 SODIMM DDR3 800 4GbE port Support Character/Graphical display module Four PCI-E GbE ports CASwell NIP RJ45 console & Dual USB SPECIFICATION |
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CAR-1001 x86-DT 82801HM) CAR-1001-3411-000 NIP-51040 82580EB NIP-51240 NIP-52020 82580DB | |
indiana general
Abstract: U321 U322 U320 f625-9q2
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f625-9q2 indiana general U321 U322 U320 | |
LM 35Contextual Info: Printed Circuit Board Terminal Blocks LP Series 3.50 mm Pitch LM 3.5/90 Single-level 90° orientation without test points nip ujjju CO N T 0 1.3 Rated Voltage Rated Current Wire Size Strip Length Torque Nm lb. in. Pin Length 300 V 300V 125 V 10 A #28. 14 AWG |
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bh 10 g
Abstract: 80156 dh80102 DH80189 89308
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QD3767 bh 10 g 80156 dh80102 DH80189 89308 | |
alpha diode pin
Abstract: CSN9250 Multijunction
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D0G12D7 A/-10 alpha diode pin CSN9250 Multijunction |