NIP 17 Search Results

Metelics

Contextual Info: MSAT-N25 NIP Diode Attenuator Shunt Element 2012 Plastic Molded DFN Description Features A broadband, High Linearity medium power shunt NIP Attenuator element 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It is

METELICS

Contextual Info: MSAT-N25 NIP Diode Attenuator Shunt Element 2012 Plastic Molded DFN Description Features A broadband, High Linearity medium power shunt NIP Attenuator element 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It is

PD-2062

Abstract: 2062
Contextual Info: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-2062 1. Scope : This specification applies to NIP silicon photodiode chips, Device No. PD-2062 2. Structure : 2-1. Planar type : NIP diode. 2-2. Electrodes : Top side Cathode : Aluminum alloy. Back side ( Anode ) : Gold alloy.

bh 26 00

Abstract: DH80102 BH-2003 BH301 80204 89129 R/BH-202
Contextual Info: SILICON PIN AND NIP DIODES FOR SWITCHING AND PHASE SHIFTING APPLICATIONS MEDIUM AND HIGH POWER This series of high power, high voltage PIN and NIP diodes incorporates ceramic-glass passivated mesa technology. A broad range of products is available, In terms of breakdown voltages, junction

NIP1CHP

Contextual Info: NIP SERIES DIE N-Channel JFET The NIP Series offers the designer an alternative fortrue high performance analog switching applications. Good breakdown voltage characteristics coupled with low on-resistance and very fast switching make these devices suitable for a wide range of applications. Die

GC4310

Abstract: GC4311 GC4371 GC4372 GC4373 GC4374 GC4375 GC4200
Contextual Info: GC4310 – GC4375 CONTROL DEVICES High Speed NIP Diodes TM RoHS Compliant KEY FEATURES The GC4300 series are high speed anode base NIP diodes made with high resistivity reverse epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by

E64380

Abstract: PC3H410NIP PC3H411NIP PC3Q410NIP DIODE C04 06
Contextual Info: PC3H41X NIP Series/PC3Q410 NIP PC3Q410NIP Rank mark No mark Conditions IF=±0.5mA VCE=5V Ta=25°C Ic mA Conditions 0.25 to 2.0 IF=±0.5mA VCE=5V Ta=25°C 3 1 2 3 ±0.2 0.4±0.1 H41 2 3 4 1 2 5.3±0.3 2.0 ±0.2 0.1 ±0.1 PC3Q410NIP 10.3±0.3 Internal connection

Contextual Info: j g S S j:'-' . \ ‘^ HIGH-VOLTAGE PIN AND NIP DIODES 4 7 “ • " * i;,: This series of SP2T and SP3T RF switches uses high voltage PIN and NIP diodes, from the EH 80000 and EH 89000 families, to achieve very low losses and distortions. These switches are usable from 1.5 to 1000 MHz, and to handle pow er levels up to 1000 W.

varactor multiplier

Abstract: step recovery diodes
Contextual Info: MICROWAVE SILICON COMPONENTS CONTENTS • _ _ 2 4 • SYMBOLS _ • HIGH VOLTAGE PIN and NIP DIODES_ 5 - Silicon PIN switching and phase shifting diodes_8

82546GB

Abstract: ABN-192 bypass intel gigabit ethernet programming duplex display led
Contextual Info: NIP-32120 Dual-Port 64-bit Gigabit Ethernet Adaptor with Fiber Bypass Function Dual MM LC fiber ports with fiber-bypass function Switch automatically, and programmable, to bypass mode while power fails and software hangs Software control to switch bypass/non-bypass

indiana general

Abstract: U321 U322 U320 f625-9q2
Contextual Info: . Performance Curves NIP See Section 5 • VHF Buffer Am plifiers ■ IF Am plifiers U321 designed fo r B Siliconix U320 n-channel JFETs BENEFITS 11322 • High Gain gfs = 120,000 jumho Typical • Wide Dynamic Range • Low Intermodulation Distortion TO -39

bh 10 g

Abstract: 80156 dh80102 DH80189 89308
Contextual Info: T E K E LE C C O M P O N E N T S bflE D \ f| • ^QD3767 G D G D 5 2 3 37T ■ . HIGH-VOLTAGE PIN AND NIP DIODES ■ - SILICON PIN SWITCHING AND PHASE SHIFTING DIODES MEDIUM AND HIGH POWER

N15Z

Abstract: n12s N110 N11s lumel N11T N12H N11H lumel N17Z N120
Contextual Info: flEKJlAPAMMfl O COOTBETCTBMM Lubuskie Zaklady Aparatów Elektrycznych “LUMEL” S.A. HawMeHOBaHue opraHM 3 a u n ii w m fcaMMJiMH, mima, o m e cT B O nHflUBM flyanbHoro npeflnpuHM M aTensi, npuH aBLunx fle K n a p a m ito o cooTBeTCTBMM NIP 929 009 36 92

exor

Abstract: solid state RF HIGH-POWER SWITCH 1N4148 230CC diode B05 ex-OR max4341 1n4148 high speed solid state diode
Contextual Info: 3ME T> □111742 O O D O B l b 7 INRO S Z -JL ! DRIVERS DEFINED 4 A driver is an interface between digital circuitry (TTL, ECL, etc. and solid state RF/m icrowave switch circuitry. The switch usually consists of PIN/NIP diodes or Field Effect Transistors. In order to maintain

U30M

Contextual Info: CEN-100 1 33W Si ngl e O u t pu t LED P o we r Suppl y scries • F — t - re r : J itrsdl AC i-'pui.-Ful ranq* ■ r rcilédüins.Short cirüuil .■Cvtflsac Uvé-r votings: Cvtr 1*nip£ra1u r* ■ dulpul *o l.iq“ M C M tb n l cürr«-n1Isvsl adHntPMe

U320-2

Abstract: 2N5432 511 ODU j108 EQUIVALENT
Contextual Info: NIP n-channel JFET designed for . . . GATE ALSO SACKS!D i CONTACT s S jliC O n iX B E N E F IT S : • L o w O N Resistance A n a lo g Sw itches ■ C om m u tators • L o w Insertion Loss ■ C hoppers • Sm all E rro r in M easurem ent Syste m s ■ integrator Reset Capacitors

5825H

Contextual Info: MN5825 COMPLETE 1/jsec, 8-Bit A/D CONVERTER MICRO NETWORKS DESCRIPTION FEATURES • C o m p le te A /D w ith In tern al C lock and R eference • 1/isec M axim um C onversion T im e • L o gic-C on trolled U nip olar or B ipo lar O p era tio n • + 1/2 L S B M ax Integral

v23612

Abstract: V23612-A802-G76 PEEK
Contextual Info: THIS C D R A WI N G IS UNPUBLISHED. C O P Y R I G H T 2000 RELEASED BY T Y C O E L E C T R O N I C S FOR PUBLICATION C O R P O R A T I O N . * 1- 1- R I G H T S 2000 LOC Dl S T REV I S I O N S s RESERVED. L TR DESCRIPTION DWN DATE APVD A1 extra PN added 01AUG2001

LCC 44

Abstract: P-LCC-44 TRAY lcc 68 pin lcc 20 test socket PGA68 6868 E-tec Interconnect DIP64 lcc 28 socket 32 PLCC to 28 din
Contextual Info: Adapters & Emulator Interface Cable E-tec the Swiss connection A complete series of adapters, programming adapters and emulator interface cables is available for use in microprocessor test- and development systems as well as logical analysors. The LCC and PLCC adapters as well as the emulator

V23614-A102-P57

Abstract: V23614-A102-P34A
Contextual Info: THIS C D R A WI N G IS UNPUBLISHED. C O P Y R I G H T 2000 RELEASED BY T Y C O E L E C T R O N I C S FOR PUBLICATION C O R P O R A T I O N . * 1- 1- R I G H T S 2000 Dl S T LOC REV I S I O N S s RESERVED. LTR AA A1 ^ <3 ID c V23614-A102-P76 DESCRIPTION OBSOLETE PARTS: OBSOLETE CIS STREAMLINING PER D.RENAUD/D.SINISI

PCJ-12403M-WG

Abstract: PCJ-12403MH-WG PCJ-124D3MH-WG PCJ-124D3MH d 94v-0 PCJ-103D3MH-WG PCJ112D3MHWG PCJ-112D3MH PCJ112D3MWG
Contextual Info: 3 4 D C B N PCJ-124D3MH-WG, OOOM M PCJ-118D3MH-WG, OOOM L PCJ-112D3MH-WG, OOOM K PCJ-109D3MH-WG, OOOM J PCJ-106D3MH-WG, OOOM 1 PCJ-105D3MH-WG, OOOM H PCJ-103D3MH-WG, OOOM G PCJ-12403M-WG, OOOM F PCJ-118D3M-WG, OOOM E PCJ-112D3M-WG. OOOM D PCJ-109D3M-WG, OOOM

433MHz saw Based receiver Schematic

Abstract: B3555 ASK receiver superheterodyne single murata saw filter rx 433 saw superhet B3551 HC49 LQFP32 SFE10
Contextual Info: TH71101 315/433MHz FSK/FM/ASK Single-Conversion Superheterodyne Receiver Features ! ! ! ! ! ! ! Single superhet architecture for low external component count FSK for digital data and FM reception for analog signal transmission FM/FSK demodulation with phase-coincidence demodulator

433 MHz rf receiver

Abstract: SAW resonator 433MHz 433 315 MHz RF Receiver ASK receiver superheterodyne B3555 rx 433 saw superhet B3551 HC49 LQFP32
Contextual Info: TH71102 315/433MHz FSK/FM/ASK Double-Conversion Superheterodyne Receiver Features ! ! ! ! ! ! ! Double superhet architecture for high degree of image rejection FSK for digital data and FM reception for analog signal transmission FM/FSK demodulation with phase-coincidence demodulator

Contextual Info: DATE REV 1 -1 8 NC 10 REVISION RECORD ECO 31967 APP DR CK TK ME TK HI L & n -0.616 [15 .65 ] |—0.538 [13 .67 ]—| 00.045 1.14 J i 177+0.38 -0.020 4' -0.51 P O S T T P O IIIC IN D U S T R IE S IN C . w w w .c o n n e c tp o sitro n ic .co m u P 7n+0.015