NI 9979 Search Results

mb 8739

Abstract: 196939-01 cRIO-901x NI 9979 cRIO-910x GB-64 NI 9978 196938-01 779563-01 crio
Contextual Info: CompactRIO High-Performance Real-Time Controllers NI cRIO-9012, NI cRIO-9014 NEW! • Small and rugged embedded real-time controllers • Execution target for NI LabVIEW Real-Time applications • Reliable and deterministic operation for stand-alone control, monitoring,

CMS-S050-040

Contextual Info: CMS-S050-040 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 1.270 * 1.270 mm Bond Pad size(B) : 1.143 *1.143 mm Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag Metalization :

CMS-S035-040

Contextual Info: CMS-S035-040 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 0.889 * 0.889 mm 2 Bond Pad size(B) : 0.762 * 0.762 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag

CMS-S072-060

Abstract: NI 9979
Contextual Info: CMS-S072-060 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 1.830* 1.830 mm 2 Bond Pad size(B) : 1.702 *1.702 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag

CMS-S072-040

Contextual Info: CMS-S072-040 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 1.830* 1.830 mm 2 Bond Pad size(B) : 1.702 *1.702 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag

9909

Abstract: CMS-S040-040L
Contextual Info: CMS-S040-040L SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 1.016 * 1.016 mm 2 Bond Pad size(B) : 0.889 * 0.889 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag

CMS-S087-040

Contextual Info: CMS-S087-040 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 2.210* 2.210 mm 2 Bond Pad size(B) : 2.083 *2.083 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag

CMS-S060-040

Contextual Info: CMS-S060-040 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 1.524* 1.524 mm 2 Bond Pad size(B) : 1.422 *1.422 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag

422-1 ir

Abstract: CMS-S060-060
Contextual Info: CMS-S060-060 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 1.524* 1.524 mm 2 Bond Pad size(B) : 1.422 *1.422 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag

CMS-S032-020

Contextual Info: CMS-S032-020 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 0.814 * 0.814 mm 2 Bond Pad size(B) : 0.686 * 0.686 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag

CMS-S040-020

Contextual Info: CMS-S040-020 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 1.016 * 1.016 mm 2 Bond Pad size(B) : 0.889 * 0.889 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag

CMS-S087-060

Contextual Info: CMS-S087-060 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 2.210* 2.210 mm 2 Bond Pad size(B) : 2.083 *2.083 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag

CMS-S040-040

Contextual Info: CMS-S040-040 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 1.016 * 1.016 mm 2 Bond Pad size(B) : 0.889 * 0.889 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag

CMS-S032-040

Contextual Info: CMS-S032-040 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 0.814 * 0.814 mm 2 Bond Pad size(B) : 0.686 * 0.686 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag

1825 - 0148

Abstract: 10189
Contextual Info: Philips Components 10189 Document No. 8 5 3 -0 6 8 5 ECN No. 99799 Date of Issue June 14, 1990 Status Product Specification Inverter Hex Inverter with Enable ECL Products FEATURES • Typical propagation delay: 2.0ns ORDERING INFORMATION • Typical supply current —I Ee : 30mA

Contextual Info: Philips Components Document No. 853-0644 ECN No. 99799 Date of Issue June 14, 1990 Status Product Specification 10108 Gate Dual 4-Input AND/NAND Gate ECL Products FEATURES • Typical propagation delay: 2.3ns for AND output, 2.8ns for NAND output • Typical supply current —lEE : 28mA

Contextual Info: Philips Components 10135 Document No. 8 5 3 -0 6 6 4 EC N No. 99799 Date of Issue June 14, 1990 Flip-Flop Status Product Specification Dual J-K Master-Slave Flip-Flop ECL Products FEATURES • Typical propagation delay: 3.0ns • Typical supply current -lEE : 54mA

D3512

Contextual Info: SAW Bandpass Filter 202163C 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D3512 2.5±0.2 25.4±0.2 7.6±0.2

Contextual Info: SAW Bandpass Filter 203654B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2512 Pin Configuration

8821

Abstract: D3512
Contextual Info: SAW Bandpass Filter 202195B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D3512 2.5±0.2 25.4±0.2 7.6±0.2

8239

Abstract: D3512
Contextual Info: SAW Bandpass Filter 251915B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z SMD Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 2.5±0.2 Package : D3512 Pin Configuration Dimensions shown are nominal in millimeters

10125N

Abstract: 10125F 10125DC 10125-F 10125d
Contextual Info: Philips Components 10125 D ocum ent No. 8 5 3 -0 6 5 8 EC N No. 99799 D ate of Issue J u n e 14, 1990 Gate S tatus Product Specification Quad ECL-to-TTL Translator E C L Products FEATURES ORDERING INFORMATION • Typical propagation delay: 3.5ns • Typical supply current

CDR03 receiver module

Abstract: CDR03 receiver 9926 mosfet Optoelectronics Device data Zener diode smd marking code 621 "Piezoelectric Sensor" sun chemical un 1210 array resistor 9926 ceramic disc 104 aec capacitors Zener diode smd marking code w1
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book surface mount MUltilayer Ceramic chip capacitors vishay vse-db0097-0805 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

kn59-158

Abstract: CP403 KTH-2003 KN-59-158 M39012 KN-59-245 KN-59-132 KN-59-244 KN-59-201 M39012/01-0504
Contextual Info: hrtp: w uA v.kingscloctronics com n j> lu g s i html N P lu gs \ N Plugs K-GRIP, JR. CONSTRUCTION D IM EN SIO N S K IN G S PARTE N U M B E R TR-# FINISH M ILIT A R Y NUMBER Silver Only KN-5S-118 in mm 0 78 19b CABLE I CRIM P TRIM I DIE CODE 415 K TH -2001