NGTB20N135IHRWG Search Results
NGTB20N135IHRWG Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| NGTB20N135IHRWG |
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IGBT 1350V 20A FS2-RC Induction Heating | Original | 180.58KB | 10 |
NGTB20N135IHRWG Price and Stock
onsemi NGTB20N135IHRWGIGBT TRENCH FS 1350V 40A TO-247 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NGTB20N135IHRWG | Tube |
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NGTB20N135IHRWG | 82,801 | 125 |
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NGTB20N135IHRWG | 82,981 | 1 |
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NGTB20N135IHRWG | 3,300 |
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NGTB20N135IHRWG | 810 |
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NGTB20N135IHRWG | 1,800 |
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NGTB20N135IHRWG Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: NGTB20N135IHRWG Product Preview IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering |
Original |
NGTB20N135IHRWG NGTB20N135IHR/D | |
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Contextual Info: NGTB20N135IHRWG Product Preview IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering |
Original |
NGTB20N135IHRWG NGTB20N135IHR/D | |
NGTB20N135IHRWGContextual Info: NGTB20N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering |
Original |
NGTB20N135IHRWG NGTB20N135IHR/D |